AOT1N60 600V,1.3A N-Channel MOSFET General Description The AOT1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC- DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS ID (at VGS=10V) 700V@150℃ 1.3A RDS(ON) (at VGS=10V) < 9Ω Top View D TO-220 G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C Units V ±30 V 1.3 ID A 0.9 Pulsed Drain Current C IDM Avalanche Current C IAR 1 A Repetitive avalanche energy C EAR 15 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 30 5 41.7 mJ V/ns W 0.3 -55 to 150 W/ oC °C 300 °C Maximum Case-to-sink A Maximum Junction-to-Case 1/5 Maximum 600 4 PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typical 55 Maximum 65 Units °C/W 2 0.5 3 °C/W °C/W www.freescale.net.cn AOT1N60 600V,1.3A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID=250µA, VGS=0V, TJ=150°C V 700 ID=250µA, VGS=0V V/ oC 0.6 VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V 100 Gate Threshold Voltage VDS=5V ID=250µA 3 µA 4.1 4.5 nΑ V 9 Ω RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.65A 7.5 gFS Forward Transconductance VDS=40V, ID=0.65A 0.9 VSD Diode Forward Voltage IS=1A,VGS=0V 0.65 IS ISM S 1 V Maximum Body-Diode Continuous Current 1 A Maximum Body-Diode Pulsed Current 4 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=1A 100 130 160 pF 11 14.5 17.5 pF 1.4 1.8 2.2 pF 2.8 3.5 5.3 Ω 6.1 8 nC Qgs Gate Source Charge 1.3 2 nC Qgd Gate Drain Charge 3.1 4 nC tD(on) Turn-On DelayTime 10 12 ns tr Turn-On Rise Time 6.7 8 ns tD(off) Turn-Off DelayTime 20 25 ns tf trr Turn-Off Fall Time 11.5 15 ns IF=1A,dI/dt=100A/µs,VDS=100V 114 137 Qrr Body Diode Reverse Recovery Charge IF=1A,dI/dt=100A/µs,VDS=100V 0.63 0.76 ns µC Body Diode Reverse Recovery Time VGS=10V, VDS=300V, ID=1A, RG=25Ω A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. L=60mH, IAS=1A, VDD=150V, RG=25Ω, Starting TJ=25°C 2/5 www.freescale.net.cn AOT1N60 600V,1.3A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 10 10V -55°C VDS=40V 6.5V 1.5 ID(A) ID (A) 6V 1 125°C 1 VGS=5.5V 0.5 25°C 0 0.1 0 5 10 15 20 25 30 2 4 VDS (Volts) Fig 1: On-Region Characteristics 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 2.5 14.0 Normalized On-Resistance 13.0 RDS(ON) (Ω ) 12.0 VGS=10V 11.0 10.0 9.0 8.0 VGS=10V ID=0.65A 2 1.5 1 0.5 7.0 0 0.5 1 1.5 2 0 2.5 -100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.2 40 125°C 1.0E-01 IS (A) BVDSS (Normalized) 1.0E+00 1.1 1 1.0E-02 25°C 1.0E-03 0.9 1.0E-04 0.8 1.0E-05 -100 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temparature 3/5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOT1N60 600V,1.3A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1000 VDS=480V ID=1A Ciss Capacitance (pF) VGS (Volts) 12 9 6 100 Coss 10 Crss 3 0 1 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 10 0.1 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 0 25 100 2 10µs ID (Amps) 1 100µs 1ms 0.1 DC TJ(Max)=150°C TC=25°C 10ms 1 Current rating ID(A) RDS(ON) limited 1 1 0 0.01 1 10 100 1000 VDS (Volts) 0 Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 50 75 100 125 150 TCASE (°C) Figure 10: Current De-rating (Note B) Figure 9: Maximum Forward Biased Safe Operating Area for AOT1N60 (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD Single Pulse 0.1 Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT1N60 (Note F) 4/5 www.freescale.net.cn AOT1N60 600V,1.3A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 5/5 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.freescale.net.cn