AOSMD AOTF18N65

AOTF18N65
650V,18A N-Channel MOSFET
General Description
Product Summary
The AOTF18N65 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this part can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
[email protected]
18A
RDS(ON) (at VGS=10V)
< 0.39Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOTF18N65L
Top View
D
TO-220F
G
AOTF18N65
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
ID
AOTF18N65
650
Units
V
±30
V
18*
12*
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
6.3
A
Repetitive avalanche energy C
EAR
595
mJ
1190
5
50
mJ
V/ns
W
0.4
-55 to 150
W/ oC
°C
300
°C
AOTF18N65
65
2.5
Units
°C/W
°C/W
Single pulsed avalanche energy G
EAS
Peak diode recovery dv/dt
dv/dt
TC=25°C
PD
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
TL
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Maximum Junction-to-Ambient A,D
RθJA
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev0: Jul 2011
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80
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AOTF18N65
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
650
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
750
ID=250µA, VGS=0V
0.7
V
V/ oC
VDS=650V, VGS=0V
1
VDS=520V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
±100
2.9
µA
3.5
4.5
nΑ
V
0.39
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=9A
0.32
gFS
Forward Transconductance
VDS=40V, ID=9A
20
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current*
18
A
ISM
Maximum Body-Diode Pulsed Current
80
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=10V, VDS=520V, ID=18A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=18A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
S
0.69
2270
3027
3785
pF
170
271
370
pF
12
22
32
pF
0.7
1.4
2.1
Ω
44
56
68
nC
9
12.4
15
nC
9
19.6
30
nC
VGS=10V, VDS=325V, ID=18A,
RG=25Ω
54
ns
83
ns
149
ns
71
IF=18A,dI/dt=100A/µs,VDS=100V
ns
520
655
790
8
10
12
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=6.3A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Jul 2011
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AOTF18N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
40
-55°C
VDS=40V
10V
30
6V
ID(A)
ID (A)
10
20
125°C
5.5V
1
10
VGS=5V
25°C
0
0.1
0
5
10
15
20
25
30
0
VDS (Volts)
Fig 1: On-Region Characteristics
0.6
4
6
8
VGS(Volts)
Figure 2: Transfer Characteristics
10
Normalized On-Resistance
3
0.5
RDS(ON) (Ω
Ω)
2
VGS=10V
0.4
0.3
VGS=10V
ID=9A
2.5
2
1.5
1
0.5
0
0.2
0
10
20
30
-100
40
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.0E+02
40
1.0E+00
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
1
125°C
1.0E-01
1.0E-02
25°C
0.9
1.0E-03
0.8
1.0E-04
-100
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
Rev0: Jul 2011
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AOTF18N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
Ciss
VDS=520V
ID=18A
Capacitance (pF)
VGS (Volts)
12
9
6
1000
Coss
Crss
100
3
0
10
0
20
40
60
80
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
0.1
100
100
20
15
10
10µs
RDS(ON)
limited
10
ID (Amps)
Current rating ID(A)
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100µs
1ms
1
DC
5
10ms
0.1s
0.1
1s
TJ(Max)=150°C
TC=25°C
0
0.01
0
25
50
75
100
125
150
TCASE (°C)
Figure 9: Current De-rating (Note B)
1
10
100
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF18N65 (Note F)
1000
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF18N65 (Note F)
Rev0: Jul 2011
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Page 4 of 5
AOTF18N65
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev0: Jul 2011
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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