AOT8N60/AOTF8N60

AOT8N60/AOTF8N60
600V,8A N-Channel MOSFET
General Description
Product Summary
The AOT8N60 & AOTF8N60 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
[email protected]
8A
RDS(ON) (at VGS=10V)
< 0.9Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT8N60L & AOTF8N60L
TO-220
Top View
G
D
TO-220F
D
G
G
D
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
AOT8N60
Symbol
Drain-Source Voltage
VDS
600
Gate-Source Voltage
±30
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
AOTF8N60
V
8
ID
Units
V
8*
6.2
6.2*
A
Pulsed Drain Current C
IDM
32
Avalanche Current C
IAR
3.2
A
Repetitive avalanche energy C
EAR
150
mJ
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
EAS
300
50
5
mJ
dv/dt
PD
50
W
0.4
-55 to 150
W/ oC
°C
300
°C
TL
AOT8N60
65
AOTF8N60
65
Units
°C/W
0.5
0.6
-2.5
°C/W
°C/W
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev.6.0: July 2013
208
1.67
TJ, TSTG
Symbol
RθJA
RθCS
V/ns
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Page 1 of 6
AOT8N60/AOTF8N60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
600
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
700
V
ID=250µA, VGS=0V
0.65
V/ oC
VDS=600V, VGS=0V
1
VDS=480V, TJ=125°C
10
µA
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
gFS
VSD
0.73
IS
Maximum Body-Diode Continuous Current
8
A
ISM
Maximum Body-Diode Pulsed Current
32
A
4.5
nΑ
V
VGS=10V, ID=4A
0.74
0.9
Ω
Forward Transconductance
VDS=40V, ID=4A
12.5
Diode Forward Voltage
IS=1A,VGS=0V
1
V
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
±100
3.8
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=10V, VDS=480V, ID=8A
3
S
912
1140
1370
pF
87
109
131
pF
6.2
7.8
9.5
pF
3.1
3.9
5.9
Ω
28.4
35
nC
5.8
7.0
nC
13.4
17.5
nC
30
40
ns
63
75
ns
69
85
ns
51
65
ns
ns
µC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=8A,dI/dt=100A/µs,VDS=100V
270
324
Qrr
Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V
3.3
4.0
VGS=10V, VDS=300V, ID=8A,
RG=25Ω
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.2A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.6.0: July 2013
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Page 2 of 6
AOT8N60/AOTF8N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
100
10V
VDS=40V
16
-55°C
6.5V
10
12
ID(A)
ID (A)
6V
8
125°C
1
4
25°C
VGS=5.5V
0
0.1
0
5
10
15
20
25
30
2
4
3
1.4
2.5
Normalized On-Resistance
1.6
RDS(ON) (Ω )
1.2
1.0
0.8
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=10V
0.6
VGS=10V
ID=4A
2
1.5
1
0.5
0
0.4
0
3
6
9
12
15
-100
18
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.0E+01
1.2
40
1.0E-01
IS (A)
BVDSS (Normalized)
1.0E+00
1.1
1
125°C
1.0E-02
25°C
1.0E-03
0.9
1.0E-04
1.0E-05
0.8
-100
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev.6.0: July 2013
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT8N60/AOTF8N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
VDS=480V
ID=8A
12
Ciss
Capacitance (pF)
VGS (Volts)
1000
9
6
Coss
100
10
3
Crss
1
0
0
10
20
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
40
100
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
100
10µs
RDS(ON)
limited
100µs
1ms
1
10ms
DC
0.1
TJ(Max)=150°C
TC=25°C
10
ID (Amps)
ID (Amps)
10
RDS(ON)
limited
1
1ms
TJ(Max)=150°C
TC=25°C
0.1
0.01
10µs
100µs
10ms
0.1s
1s
DC
0.01
1
10
100
1000
1
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT8N60 (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF8N60 (Note F)
10
Current rating ID(A)
8
6
4
2
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev.6.0: July 2013
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Page 4 of 6
AOT8N60/AOTF8N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT8N60 (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF8N60 (Note F)
Rev.6.0: July 2013
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Page 5 of 6
AOT8N60/AOTF8N60
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.6.0: July 2013
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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Page 6 of 6