AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS 700V@150℃ ID (at VGS=10V) 1.3A RDS(ON) (at VGS=10V) < 9Ω g D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentB Pulsed Drain Current TC=100°C C Units V ±30 V 1.3 ID 0.8 A IDM 4 Avalanche Current C IAR 1 A Repetitive avalanche energy C EAR 15 mJ Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS dv/dt 30 5 45 mJ V/ns W 0.36 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F 1/6 Maximum 600 PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typical 45 Maximum 55 Units °C/W 2.3 0.5 2.8 °C/W °C/W www.freescale.net.cn AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.6 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V 100 Gate Threshold Voltage VDS=5V,ID=250µA 3 µA 4.1 4.5 nΑ V 9 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.65A 7.5 gFS Forward Transconductance VDS=40V, ID=0.65A 0.9 VSD Diode Forward Voltage IS=1A,VGS=0V 0.65 S IS Maximum Body-Diode Continuous Current 1 A ISM Maximum Body-Diode Pulsed Current 4 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=1A 105 130 160 pF 12 14.5 18 pF 1.5 1.8 2.2 pF 2.9 3.5 5.3 Ω 6.1 8 nC Qgs Gate Source Charge 1.3 2 nC Qgd Gate Drain Charge 3.1 4 nC tD(on) Turn-On DelayTime 10 13 ns tr Turn-On Rise Time 6.7 13 ns tD(off) Turn-Off DelayTime 20 26 ns tf trr Turn-Off Fall Time 11.5 23 ns Body Diode Reverse Recovery Time IF=1.3A,dI/dt=100A/µs,VDS=100V 114 137 Qrr Body Diode Reverse Recovery Charge IF=1.3A,dI/dt=100A/µs,VDS=100V 0.63 0.76 ns µC VGS=10V, VDS=300V, ID=1A, RG=25Ω A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=1A, VDD=150V, RG=10Ω, Starting TJ=25°C 2/6 www.freescale.net.cn AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 10 10V -55°C VDS=40V 6.5V 1 ID(A) ID (A) 1.5 6V 125°C 1 0.5 25°C VGS=5.5V 0 0.1 0 5 10 15 20 25 30 2 VDS (Volts) Fig 1: On-Region Characteristics 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 2.5 14.0 Normalized On-Resistance 13.0 12.0 RDS(ON) (Ω Ω) 4 VGS=10V 11.0 10.0 9.0 8.0 7.0 VGS=10V ID=0.5A 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 -100 1.2 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 1.0E+00 40 1.1 1.0E-01 1 125° 25°C 1.0E-02 0.9 25° 0.8 1.0E-03 1.0E-04 -100 3/6 125°C IS (A) BVDSS (Normalized) ID=30A -50 0 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 15 Capacitance (pF) VGS (Volts) Ciss VDS=480V ID=1A 12 9 6 100 Coss 10 Crss 3 1 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 8 10 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 800 10µs 100µs ID (Amps) RDS(ON) limited 1ms 10ms 0.1s 0.1 TJ(Max)=150°C TC=25°C DC TJ(Max)=150°C TC=25°C 600 Power (W) 1 400 200 0.01 0 1 10 100 1000 0.0001 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.8C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.5 50 1.2 Current rating ID(A) Power Dissipation (W) 60 40 30 20 0.9 0.6 0.3 10 0 0.0 0 25 50 75 100 125 TCASE (°C) Figure 12: Power De-rating (Note B) 150 0 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note B) 150 400 TJ(Max)=150°C TA=25°C Power (W) 300 200 100 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) 100 1000 Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) 5/6 www.freescale.net.cn AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 6/6 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.freescale.net.cn