APT6010JLL
600V 47A 0.100Ω
POWER MOS 7
R
MOSFET
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with MIcrosemi's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
27
2
T-
D
G
SO
"UL Recongnized"
file # 145592
ISOTOP fi
D
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol
S
S
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT6010JLL
UNIT
600
Volts
47
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
520
Watts
Linear Derating Factor
4.16
W/°C
PD
TJ,TSTG
1
188
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
47
(Repetitive and Non-Repetitive)
1
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 23.5A)
TYP
MAX
Volts
0.100
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
UNIT
6-2006
Characteristic / Test Conditions
050-7052 Rev E
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT6010JLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
1250
Reverse Transfer Capacitance
f = 1 MHz
90
VGS = 10V
150
VDD = 300V
30
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
ID = 47A @ 25°C
tf
17
VDD = 300V
RG = 0.6Ω
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
10
INDUCTIVE SWITCHING @ 25°C
6
770
VDD = 400V, VGS = 15V
6
ns
34
ID = 47A @ 25°C
Fall Time
nC
12
VGS = 15V
Turn-off Delay Time
pF
75
RESISTIVE SWITCHING
Rise Time
td(off)
UNIT
6710
VGS = 0V
3
MAX
ID = 47A, RG = 5Ω
845
INDUCTIVE SWITCHING @ 125°C
1000
VDD = 400V VGS = 15V
ID = 47A, RG = 5Ω
µJ
1060
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
47
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -47A, dl S /dt = 100A/µs)
790
ns
Q rr
Reverse Recovery Charge (IS = -47A, dl S/dt = 100A/µs)
17.9
µC
dv/
Peak Diode Recovery
dt
dv/
188
(Body Diode)
1.3
(VGS = 0V, IS = - 47A)
dt
5
Amps
Volts
8
V/ns
MAX
UNIT
0.24
°C/W
THERMAL CHARACTERISTICS
Symbol
RθJC
VIsolation
Characteristic
MIN
TYP
Junction to Case
RMS Volatage (50-60hHZ Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
2500
Volts
4 Starting Tj = +25°C, L = 2.72mH, RG = 25Ω, Peak IL = 47A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID47A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and inforation contained herein.
D = 0.9
0.20
0.7
0.15
0.5
Note:
0.10
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7052 Rev E
6-2006
0.25
0.3
t2
0.05
0.1
0
t1
SINGLE PULSE
0.05
10-5
10-4
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
0.123
0.0203
0.173
0.490
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
120
100
80
60
40
TJ = +125°C
TJ = +25°C
20
0
TJ = -55°C
0
1
2
3
4
5
6
7
8
9
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
80
7V
60
6.5V
40
6V
20
5.5V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
V
40
30
20
10
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
1.20
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0
D
20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 23.5A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
V
NORMALIZED TO
= 10V @ 23.5A
GS
1.30
1.15
0
25
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
7.5V
100
0
50
0.0
-50
8V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
6-2006
140
VGS=15 &10V
120
050-7052 Rev E
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
160
ID, DRAIN CURRENT (AMPERES)
0.0651
Dissipated Power
(Watts)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
TC ( C)
ZEXT
TJ ( C)
0.0528
APT6010JLL
140
OPERATION HERE
LIMITED BY RDS (ON)
100µS
10
1mS
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
D
= 47A
VDS=120V
VDS=300V
12
VDS=480V
8
4
0
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
120
1,000
Coss
100
Crss
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
140
V
td(off)
100
Ciss
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10,000
C, CAPACITANCE (pF)
100
APT6010JLL
20,000
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
190
G
120
= 400V
DD
R
= 5Ω
T = 125°C
J
V
DD
R
G
= 400V
= 5Ω
tr and tf (ns)
80
T = 125°C
60
J
L = 100µH
40
10
20
V
DD
G
30
40
50 60
70
80 90
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
4000
= 400V
I
Eoff
diode reverse recovery
1500
1000
Eon
500
20
DD
D
30
40
= 400V
= 47A
T = 125°C
J
L = 100µH
10
20
V
= 5Ω
E ON includes
Eon and Eoff (µJ)
10
T = 125°C
2000
6-2006
0
50 60
70
80
90
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
R
050-7052 Rev E
tr
20
2500
0
tf
60
td(on)
20
0
80
40
30
40
50
60
70 80 90
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
Eoff
J
SWITCHING ENERGY (µJ)
td(on) and td(off) (ns)
L = 100µH
100
3000
L = 100µH
E ON includes
diode reverse recovery
2000
Eon
1000
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT6010JLL
90%
Gate Voltage
10%
TJ125°C
Gate Voltage
T 125°C
J
td(off)
td(on)
Drain Current
tr
tf
5%
10%
Drain Voltage
90%
90%
5%
Drain Voltage
Switching Energy
10%
0
Drain Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
ID
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a registered trademark of ST Microelectronics NV.Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
6-2006
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7052 Rev E
7.8 (.307)
8.2 (.322)