VISHAY BAT41_12

BAT41
Vishay Semiconductors
Small Signal Schottky Diode
Features
• For general purpose applications
• This diode features low turn-on voltage
and high breakdown voltage. This device
is protected by a PN junction guard ring
against excessive voltage, such as
electrostatic discharges
• This diode is also available in a MiniMELF
case with type designation LL41
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
94 9367
Mechanical Data
Case: DO-35
Weight: approx. 125 mg
Cathode Band Color: black
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
BAT41
Ordering code
Type Marking
Remarks
BAT41-TR or BAT41-TAP
BAT41
Tape and Reel/Ammopack
/
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
VRRM
100
V
IF
1001)
mA
tp < 1 s, δ < 0.5
IFRM
3501)
mA
tp = 10 ms
IFSM
7501)
mA
Ptot
1)
mW
Repetitive peak reverse voltage
Forward continuous current
Repetitive peak forward current
Surge forward current
Power dissipation
1)
Tamb = 65 °C
200
Unit
Valid provided that electrodes are kept at ambient temperature
Document Number 85659
Rev. 1.6, 12-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BAT41
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Symbol
Value
Unit
RthJA
3001)
K/W
Tj
125
°C
Ambient operating temperature range
Tamb
- 65 to + 125
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Junction temperature
1)
Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse breakdown voltage2)
Leakage current2)
Forward voltage2)
Diode capacitance
2)
Test condition
Symbol
Min.
Typ.
IR = 100 µA
V(BR)
100
110
VR = 50 V, Tj = 25 °C
IR
100
nA
VR = 50 V, Tj = 100 °C
IR
20
µA
IF = 1 mA
VF
450
mV
1000
mV
IF = 200 mA
VF
VR = 1 V, f = 1 MHz
CD
400
Max.
Unit
V
2
pF
Pulse test, tp = 300 µs
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
100000
IR - Reverse Leakage Current (nA)
Ptot- Power Dissipation (mW)
250
200
150
100
50
Tj = 125 °C
10000
20225
50
100
Tamb - Ambient Temperature (°C)
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2
50 °C
100
25 °C
10
1
150
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
75 °C
1000
0
0
100 °C
20226
0
10 20 30 40 50 60 70 80 90 100
VR - Reverse Voltage (V)
Figure 2. Typical Reverse Characteristics
For technical questions within your region, please contact one of the following: Document Number 85659
[email protected], [email protected], [email protected]
Rev. 1.6, 12-Aug-10
BAT41
Vishay Semiconductors
1000
5.0
CD - Diode Capacitance (pF)
I F - Forward Current (mA)
4.5
100
T j = 125 ° C
10
1
- 40 °C
0.1
25 °C
0.01
0
200
18641
400
600
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
800
1000
0
1200
VF - Forward Voltage (mV)
20227
Figure 3. Typical Forward Characteristics
5
10
15
20
25
30
35
40
VR - Reverse Voltage (V)
Figure 4. Typical Capacitance vs. Reverse Voltage
Package Dimensions in millimeters (inches): DO-35
3.9 (0.154) max.
26 (1.024) min.
1.5 (0.059)
26 (1.024) min.
1.7 (0.067)
0.55. (0.022) max
Cathode identification
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 85659
Rev. 1.6, 12-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Vishay
Disclaimer
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Revision: 12-Mar-12
1
Document Number: 91000