KEC BC338_00

SEMICONDUCTOR
BC338
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B
C
FEATURES
A
High Current : IC=800mA.
DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA).
For Complementary with PNP type BC328.
N
E
K
G
J
D
)
SYMBOL
RATING
H
UNIT
F
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
800
mA
Emitter Current
IE
-800
mA
Collector Power Dissipation
PC
625
mW
Junction Temperature
Tj
150
Tstg
-55 150
L
F
1
2
C
CHARACTERISTIC
3
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_ 0.50
14.00 +
0.55 MAX
2.30
0.45 MAX
1.00
M
MAXIMUM RATING (Ta=25
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
1. COLLECTOR
2. BASE
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
3. EMITTER
TO-92
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
-
-
100
nA
Collector Cut-off Current
ICBO
VCB=25V, IE=0
DC Current Gain (Note)
hFE
VCE=1V, IC=100mA
100
-
630
Collector-Emitter Saturation Voltage
VCE(sat)
IC=500mA, IB=50mA
-
-
0.7
V
Base-Emitter Voltage
VBE(ON)
VCE=1V, IC=300mA
-
-
1.2
V
Transition Frequency
fT
VCE=5V, IC=-10mA, f=100MHz
-
100
-
MHz
VCB=10V, f=1MHz, IE=0
-
12
-
pF
Cob
Collector Output Capacitance
Note : hFE Classification none:100 630,
2000. 2. 28
16:100 250,
Revision No : 2
25:160 400,
40:250 630
1/2
BC338
2000. 2. 28
Revision No : 2
2/2