isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BD376/378/380 DESCRIPTION ·DC Current Gain: hFE= 20(Min)@ IC= -1A ·Complement to Type BD375/377/379 APPLICATIONS ·Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE BD376 -50 BD378 -75 BD380 -100 BD376 -45 BD378 -60 BD380 -80 UNIT V V Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A IB Base Current-Continuous -1 A PC Collector Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BD376/378/380 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD376 VCEO(SUS) VCBO Collector-Emitter Sustaining Voltage Collector-Base Voltage BD378 MIN MAX UNIT -45 IC= -100mA ; IB= 0 -80 BD376 -50 IC= -0.1mA ; IE= 0 BD380 V -60 BD380 BD378 TYP. V -75 -100 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A -1.0 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -2V -1.5 V BD376 VCB= -45V; IE= 0 -2 BD378 VCB= -60V; IE= 0 -2 BD380 VCB= -80V; IE= 0 -2 -0.1 ICBO Collector Cutoff Current B IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.15A ; VCE= -2V 40 hFE-2 DC Current Gain IC= -1A; VCE= -2V 20 μA mA 375 Switching Times ton Turn-On Time toff Turn-Off Time IC= -0.5A; IB1= -IB2= -50mA; VCC= -30V hFE-1 Classifications 6 10 16 25 40-100 63-160 100-250 150-375 isc Website：www.iscsemi.cn 2 0.05 μs 0.5 μs