isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY24 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 90V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed APPLICATIONS ·Designed for LF signal powe amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w VALUE UNIT 100 V 90 V 10 V IC Collector Current-Continuous 6 A IB Base Current 3 A PC Collector Power Dissipation@TC=25℃ 87.5 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER MAX UNIT 2.0 ℃/W Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDY24 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 90 V V(BR)CBO Collector-Base Breakdown Voltage IC= 3mA; IE= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.25A 1.2 V ICES Collector Cutoff Current VCE= 100V; VBE= 0 1.0 mA ICEO Collector Cutoff Current VCE= 90V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 1.0 mA hFE DC Current Gain fT ton Turn-On Time toff Turn-Off Time B n c . i m e s c s i . w w w IC= 2A; VCE= 4V 15 IC= 0.5A; VCE= 15V; f=10MHz 10 B C 15-45 30-90 75-100 TYP. MAX UNIT 100 MHz IC= 5A; IB= 1A 0.5 μs IC= 5A; IB1= 1A; IB2= -0.5A 2.0 μs B hFE Classifications A MIN B B Current Gain-Bandwidth Product Switching Times CONDITIONS isc Website：www.iscsemi.cn 2