isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY54 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 120V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.1 V(Max)@ IC = 4A ·High Switching Speed APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT 180 V 120 V 7 V IC Collector Current-Continuous 12 A IB Base Current 5 A PC Collector Power Dissipation@TC=25℃ 60 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B isc Website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDY54 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A 2.2 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 7A; IB= 1.4A 2.5 V ICEX Collector Cutoff Current VCE= 150V;VBE=-1.5V,TC=150℃ 15 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 3.0 mA hFE DC Current Gain fT CONDITIONS Switching Times w w ton Turn-On Time toff Turn-Off Time TYP. MAX 120 B B B n c . i m e IC= 2A; VCE= 1.5V 20 IC= 0.5A; VCE= 4V; f=10MHz 20 UNIT V B s c s i . w Current Gain-Bandwidth Product MIN MHz IC= 5A; IB= 1A 0.3 μs IC= 5A; IB1= 1A; IB2= -0.5A 1.8 μs B isc Website：www.iscsemi.cn 2