PHILIPS BF510

DISCRETE SEMICONDUCTORS
DATA SHEET
BF510 to 513
N-channel silicon field-effect
transistors
Product specification
File under Discrete Semiconductors, SC07
December 1997
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
DESCRIPTION
Asymmetrical N-channel planar
epitaxial junction field-effect
transistors in the miniature plastic
envelope intended for applications up
to the v.h.f. range in hybrid thick and
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
(BF511) and mains radios (BF512) or
the mixer stage (BF513).
BF510 to 513
MARKING CODE
BF510 = S6p
BF511 = S7p
BF512 = S8p
BF513 = S9p
handbook, halfpage
3
g
PINNING - SOT23
1
= gate
2
= drain
3
= source
1
d
s
2
Top view
MAM385
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Drain-source voltage
VDS
max.
20
V
Drain current (DC or average)
ID
max.
30
mA
Ptot
max.
250
mW
Total power dissipation
up to Tamb = 40 °C
BF510
511
512
>
0.7
2.5
6
10 mA
<
3.0
7.0
12
18 mA
 yfs  >
2.5
4
6
7 mS
VDS = 10 V; VGS = 0
Crs
typ.
0.3
0.3
−
− pF
VDS = 10 V; ID = 5 mA
Crs
typ.
−
−
0.3
0.3 pF
VDS = 10 V; VGS = 0
F
typ.
1.5
1.5
−
− dB
VDS = 10 V; ID = 5 mA
F
typ.
−
−
1.5
1.5 dB
Drain current
VDS = 10 V; VGS = 0
IDSS
513
Transfer admittance (common source)
VDS = 10 V; VGS = 0; f = 1 kHz
Feedback capacitance
Noise figure at optimum source admittance
GS = 1 mS; −BS = 3 mS; f = 100 MHz
December 1997
2
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
VDS
max.
20 V
Drain-gate voltage (open source)
VDGO
max.
20 V
Drain current (DC or average)
ID
max.
30 mA
Gate current
± IG
max.
10 mA
Total power dissipation up to Tamb = 40 °C (note 1)
Ptot
max.
250 mW
Storage temperature range
Tstg
−65 to + 150 °C
Junction temperature
Tj
max.
150 °C
Rth j-a
=
430 K/W
THERMAL RESISTANCE
From junction to ambient (note 1)
Note
1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0.7 mm.
STATIC CHARACTERISTICS
Tamb = 25 °C
BF510
511
512
513
Gate cut-off current
−VGS = 0.2 V; VDS = 0
−IGSS
<
10
10
10
10 nA
−V(BR)GDO
>
20
20
20
20 V
IDSS
>
<
0.7
3.0
2.5
7.0
6
12
10 mA
18 mA
−V(P)GS
typ.
0.8
1.5
2.2
3 V
Gate-drain breakdown voltage
IS = 0; −ID = 10 µA
Drain current
VDS = 10 V; VGS = 0
Gate-source cut-off voltage
ID = 10 µA; VDS = 10 V
December 1997
3
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
DYNAMIC CHARACTERISTICS
Measuring conditions (common source):
VDS = 10 V; VGS = 0; Tamb = 25 °C for BF510 and BF511
VDS = 10 V; ID = 5 mA; Tamb = 25 °C for BF512 and BF513
y-parameters (common source)
Input capacitance at f = 1 MHz
Cis
<
Input conductance at f = 100 MHz
gis
typ.
Feedback capacitance at f = 1 MHz
Crs
Transfer admittance at f = 1 kHz
511
512
5
5
5
513
5 pF
100
90
60
50 µS
typ.
0.4
0.4
0.4
0.4 pF
<
0.5
0.5
0.5
0.5 pF
 yfs 
>
2.5
4.0
4.0
3.5 mS
 yfs 
>
Transfer admittance at f = 100 MHz
 yfs 
typ.
Output capacitance at f = 1 MHz
Cos
Output conductance at f = 1 MHz
Output conductance at f = 100 MHz
VGS = 0 instead of ID = 5 mA
BF510
−
−
6.0
7.0 mS
3.5
5.5
5.0
5.0 mS
<
3
3
3
3 pF
gos
<
60
80
100
120 µS
gos
typ.
35
55
70
90 µS
F
typ.
1.5
1.5
1.5
1.5 dB
Noise figure at optimum source admittance
GS = 1 mS; −BS = 3 mS;
f = 100 MHz
MDA275
1.5
MDA276
10
|yfs|
handbook, halfpage
handbook, halfpage
Crs
BF513
(mS)
8
(pF)
BF511
BF512
1
6
BF510
4
0.5
typ
2
0
0
Fig.2
4
8
12
16
0
20
VDS (V)
0
VGS = 0 for BF510 and BF511;
ID = 5 mA for BF512 and BF513;
f = 1 MHz; Tamb = 25 °C.
December 1997
Fig.3
4
5
10
ID (mA)
15
VDS = 10 V; f = 1 kHz; Tamb = 25 °C; typical
values.
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
MDA245
300
handbook, halfpage
Ptot
(mW)
200
100
0
40
0
80
120
200
160
Tamb (°C)
Fig.4 Power derating curve.
December 1997
5
BF510 to 513
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
December 1997
EUROPEAN
PROJECTION
6
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Short-form specification
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
December 1997
7