DISCRETE SEMICONDUCTORS DATA SHEET BF246A; BF246B; BF246C; BF247A; BF247B; BF247C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF246A; BF246B; BF246C; BF247A; BF247B; BF247C FEATURES PINNING • Interchangeability of drain and source connections PIN • High IDSS range SYMBOL DESCRIPTION BF246A; BF246B; BF246C • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers 1 d drain 2 g gate 3 s source BF247A; BF247B; BF247C • Mixers 1 • General purpose switching. d drain 2 s source 3 g gate DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. 1 handbook, halfpage 2 3 d g s CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. MAM257 Fig.1 Simplified outline (TO-92 variant) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT − − ±25 V −0.6 − −14.5 V BF246A; BF247A 30 − 80 mA BF246B; BF247B 60 − 140 mA VDS drain-source voltage VGSoff gate-source cut-off voltage ID = 10 nA; VDS = 15 V IDSS drain current VDS = 15 V; VGS = 0 110 − 250 mA Ptot total power dissipation up to Tamb = 50 °C − − 400 mW yfs forward transfer admittance ID = 10 mA; VDS = 15 V; f = 1 kHz 8 − − mS Crs reverse transfer capacitance ID = 10 mA; VDS = 15 V; f = 1 MHz − 3.5 − pF Tj operating junction temperature − − 150 °C BF246C; BF247C 1996 Jul 29 2 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF246A; BF246B; BF246C; BF247A; BF247B; BF247C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − ±25 V IG gate current − 10 mA Ptot total power dissipation − 400 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C up to Tamb = 50 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient in free air VALUE UNIT 250 K/W STATIC CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT −25 − − V gate-source cut-off voltage ID = 10 nA; VDS = 15 V −0.6 − −14.5 V gate-source voltage ID = 200 µA; VDS = 15 V BF246A; BF247A −1.5 − −4.0 V BF246B; BF247B −3.0 − −7.0 V −5.5 − −12.0 V BF246A; BF247A 30 − 80 mA BF246B; BF247B 60 − 140 mA BF246C; BF247C 110 − 250 mA − − −5 nA gate-source breakdown voltage VGSoff VGS BF246C; BF247C IGSS TYP. IG = −1 µA; VDS = 0 V(BR)GSS IDSS MIN. drain current gate leakage current VGS = 0; VDS = 15 V; note 1 VGS = −15 V; VDS = 0 Note 1. Measured under pulse conditions: tp = 300 µs; δ ≤ 0.02. DYNAMIC CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Cis input capacitance ID = 10 mA; f = 1 MHz; VDS = 15 V − 11 − pF Crs reverse transfer capacitance ID = 10 mA; f = 1 MHz; VDS = 15 V − 3.5 − pF Cos output capacitance ID = 10 mA; f = 1 MHz; VDS = 15 V − 5 − pF yfs forward transfer admittance ID = 10 mA; f = 1 kHz; VDS = 15 V 8 17 − mS fgfs cut-off frequency gfs = 0.7 of its value at 1 kHz; VGS = 0 − 450 − MHz 1996 Jul 29 3 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF246A; BF246B; BF246C; BF247A; BF247B; BF247C PACKAGE OUTLINE handbook, full pagewidth 0.40 min 4.2 max 1.7 1.4 5.2 max 12.7 min 0.48 0.40 1 4.8 max 2 2.54 3 0.66 0.56 2.5 max Dimensions in mm. (1) Terminal dimensions in this zone are uncontrolled. Fig.2 TO-92 variant. 1996 Jul 29 4 (1) MBC015 - 1 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF246A; BF246B; BF246C; BF247A; BF247B; BF247C DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 29 5