PHILIPS PHB45N03LTA

PHP/PHB/PHD45N03LTA
N-channel enhancement mode field-effect transistor
Rev. 02 — 02 November 2001
Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP45N03LTA in SOT78 (TO-220AB)
PHB45N03LTA in SOT404 (D2-PAK)
PHD45N03LTA in SOT428 (D-PAK).
2. Features
■ Low on-state resistance
■ Fast switching.
3. Applications
■ Computer motherboard high frequency DC to DC converters.
4. Pinning information
Table 1:
Pinning - SOT78, SOT404, SOT428 simplified outline and symbol
Pin Description
1
gate (g)
2
drain (d)
3
source (s)
mb
mounting base,
connected to drain (d)
Simplified outline
Symbol
mb
mb
d
mb
[1]
g
MBB076
2
2
1
1
3
MBK116
Top view
3
MBK091
MBK106
1 2 3
SOT78 (TO-220AB)
SOT404 (D2-PAK)
[1]
It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
SOT428 (D-PAK)
s
PHP/PHB/PHD45N03LTA
Philips Semiconductors
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj = 25 to 175 °C
-
25
V
ID
drain current (DC)
Tmb = 25 °C; VGS = 5 V
-
40
A
Ptot
total power dissipation
Tmb = 25 °C
-
65
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A
13
21
mΩ
VGS = 5 V; ID = 25 A
17.5
24
mΩ
VGS = 3.5 V; ID = 5.2 A
22
40
mΩ
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj = 25 to 175 °C
-
25
V
VDGR
drain-gate voltage (DC)
Tj = 25 to 175 °C; RGS = 20 kΩ
-
25
V
VGS
gate-source voltage (DC)
-
±15
V
VGSM
gate-source voltage
tp ≤ 50 µs; pulsed;
duty cycle 25 %; Tj ≤ 150 °C
-
±20
V
ID
drain current (DC)
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3
-
40
A
Tmb = 100 °C; VGS = 5 V; Figure 2
-
30
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
-
160
A
Ptot
total power dissipation
Tmb = 25 °C; Figure 1
-
65
W
Tstg
storage temperature
−55
+175
°C
Tj
operating junction temperature
−55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC) Tmb = 25 °C
-
40
A
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
-
160
A
-
60
mJ
Avalanche ruggedness
EAS
non-repetitive avalanche energy
unclamped inductive load;
ID = 40 A; tp = 0.1 ms; VDD = 15 V;
RGS = 50 Ω; VGS = 5V; starting Tj = 25 °C;
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09023
Product data
Rev. 02 — 02 November 2001
2 of 14
PHP/PHB/PHD45N03LTA
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa16
120
03aa24
120
I der
Pder
(%)
(%)
80
80
40
40
0
0
0
0
50
100
150
50
200
o
Tmb ( C)
P tot
P der = ---------------------- × 100%
P
°
100
150
200
o
Tmb ( C)
ID
I der = ------------------- × 100%
I
°
tot ( 25 C )
D ( 25 C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03af58
103
ID
(A)
RDSon = VDS / ID
tp = 10 µs
102
100 µs
10
δ=
P
tp
T
1 ms
D.C.
10 ms
t
tp
T
1
1
10
VDS (V)
102
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09023
Product data
Rev. 02 — 02 November 2001
3 of 14
PHP/PHB/PHD45N03LTA
Philips Semiconductors
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Value Unit
Rth(j-mb)
thermal resistance from junction to mounting
base
Figure 4
2.3
K/W
Rth(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 package
60
K/W
mounted on a printed circuit board; minimum
footprint; SOT404 and SOT428 packages
50
K/W
7.1 Transient thermal impedance
03af57
10
Zth(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
10-1
δ=
P
0.02
tp
T
single pulse
t
tp
T
10-2
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09023
Product data
Rev. 02 — 02 November 2001
4 of 14
PHP/PHB/PHD45N03LTA
Philips Semiconductors
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
25
-
-
V
Tj = −55 °C
22
-
-
V
Tj = 25 °C
1
1.5
2
V
Tj = 175 °C
0.5
-
-
V
Tj = −55 °C
-
-
2.3
V
-
0.05
10
µA
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th)
IDSS
gate-source threshold voltage
drain-source leakage current
ID = 0.25 mA; VGS = 0 V
ID = 1 mA; VDS = VGS; Figure 9
VDS = 25 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
-
-
500
µA
-
10
100
nA
Tj = 25 °C
-
17.5
24
mΩ
Tj = 175 °C
-
30
40.8
mΩ
-
13
21
mΩ
-
22
40
mΩ
-
19
-
nC
-
5
-
nC
IGSS
gate-source leakage current
VGS = ±5 V; VDS = 0 V
RDSon
drain-source on-state resistance
VGS = 5 V; ID = 25 A; Figure 7 and 8
VGS = 10 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
VGS = 3.5 V; ID = 5.2 A; Figure 7 and 8
Tj = 25 °C
Dynamic characteristics
Qg(tot)
total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
ID = 40 A; VDD = 24 V; VGS = 5 V; Figure 13
-
8
11
nC
-
700
-
pF
output capacitance
-
290
-
pF
Crss
reverse transfer capacitance
-
200
-
pF
td(on)
turn-on delay time
-
10
20
ns
tr
turn-on rise time
-
60
90
ns
td(off)
turn-off delay time
-
35
60
ns
tf
turn-off fall time
-
40
60
ns
-
0.95
1.2
V
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11
VDD = 15 V; ID = 15 A; VGS = 10 V;
RG = 6 Ω; resistive load
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09023
Product data
Rev. 02 — 02 November 2001
5 of 14
PHP/PHB/PHD45N03LTA
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03af59
45
10 V 6 V 5 V
4V
Tj = 25 ºC
ID
(A)
03af61
45
VDS > ID x RDSon
ID
(A)
3.5 V
30
30
3V
15
15
2.5 V
175 ºC
Tj = 25 ºC
VGS = 2 V
0
0
0
0.4
0.8
1.2
1.6
2
VDS (V)
Tj = 25 °C
0
2
3
4
5
VGS (V)
Tj = 25 °C and 175 °C; VDS > ID x RDSON
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03af60
03ad57
2
0.03
3.5 V
Tj = 25 ºC
RDSon
1
a
VGS = 4 V
(Ω)
1.6
0.025
1.2
0.02
5V
0.8
6V
0.015
0.4
10 V
0.01
0
0
15
30
ID (A)
45
Tj = 25 °C
-60
60
120
Tj (ºC)
180
R DSon
a = --------------------------R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09023
Product data
0
Rev. 02 — 02 November 2001
6 of 14
PHP/PHB/PHD45N03LTA
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa33
2.5
(V)
03aa36
10-1
ID
(A)
10-2
VGS(th)
max
2
typ
10-3
1.5
min
min
1
typ
max
10-4
10-5
0.5
10-6
0
-60
0
60
120
o
180
0
0.5
1
Tj ( C)
1.5
2
2.5
3
VGS (V)
Tj = 25 °C; VDS = 5 V
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03af63
104
C
(pF)
103
Ciss
Coss
Crss
102
10-1
1
102
10
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09023
Product data
Rev. 02 — 02 November 2001
7 of 14
PHP/PHB/PHD45N03LTA
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03af62
45
IS
03af64
10
VGS = 0 V
(A)
VGS
ID = 40 A
(V)
Tj = 25 ºC
8
VDD = 24 V
30
6
4
15
175 ºC
Tj = 25 ºC
2
0
0
0
0.3
0.6
0.9
VSD (V)
1.2
0
20
30
40
QG (nC)
Tj = 25 °C and 175 °C; VGS = 0 V
ID = 40 A; VDD = 24 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09023
Product data
10
Rev. 02 — 02 November 2001
8 of 14
PHP/PHB/PHD45N03LTA
Philips Semiconductors
N-channel enhancement mode field-effect transistor
9. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
E
SOT78
A
A1
p
q
mounting
base
D1
D
L2
L1(1)
Q
b1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
D1
E
e
L
L1(1)
L2
max.
p
q
Q
mm
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
2.54
15.0
13.5
3.30
2.79
3.0
3.8
3.6
3.0
2.7
2.6
2.2
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
REFERENCES
IEC
SOT78
JEDEC
EIAJ
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
00-09-07
01-02-16
Fig 14. SOT78 (TO-220AB).
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09023
Product data
Rev. 02 — 02 November 2001
9 of 14
PHP/PHB/PHD45N03LTA
Philips Semiconductors
N-channel enhancement mode field-effect transistor
Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads
(one lead cropped)
SOT404
A
A1
E
mounting
base
D1
D
HD
2
Lp
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
2.54
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-06-25
01-02-12
SOT404
Fig 15. SOT404 (D2-PAK)
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09023
Product data
Rev. 02 — 02 November 2001
10 of 14
PHP/PHB/PHD45N03LTA
Philips Semiconductors
N-channel enhancement mode field-effect transistor
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
seating plane
y
A
E
A2
A
A1
b2
D1
mounting
base
E1
D
HE
L2
2
L1
L
1
3
b1
w M A
b
c
e
e1
0
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT max.
2.38
2.22
mm
A1(1)
A2
b
b1
max.
b2
c
0.65
0.45
0.89
0.71
0.89
0.71
1.1
0.9
5.36
5.26
0.4
0.2
D1
E
D
max. max. max.
E1
min.
6.22
5.98
4.0
6.73
6.47
4.81
4.45
e
e1
2.285 4.57
HE
max.
L
L1
min.
L2
w
y
max.
10.4
9.6
2.95
2.55
0.5
0.7
0.5
0.2
0.2
Note
1. Measured from heatsink back to lead.
OUTLINE
VERSION
SOT428
REFERENCES
IEC
JEDEC
EIAJ
TO-252
SC-63
EUROPEAN
PROJECTION
ISSUE DATE
98-04-07
99-09-13
Fig 16. SOT428 (D-PAK)
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09023
Product data
Rev. 02 — 02 November 2001
11 of 14
PHP/PHB/PHD45N03LTA
Philips Semiconductors
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6:
Revision history
Rev Date
02
20011102
CPCN
Description
-
Includes product data; second version; supersedes initial version PHP45N03LTA of
10 July 2001.
•
01
20010710
-
Table 2 “Quick reference data” on page 2: Correction to RDSon condition.
Product data; initial version.
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09023
Product data
Rev. 02 — 02 November 2001
12 of 14
PHP/PHB/PHD45N03LTA
Philips Semiconductors
N-channel enhancement mode field-effect transistor
11. Data sheet status
Data sheet status[1]
Product status[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected]
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9397 750 09023
Rev. 02 — 02 November 2001
13 of 14
Philips Semiconductors
PHP/PHB/PHD45N03LTA
N-channel enhancement mode field-effect transistor
Contents
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
© Koninklijke Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 02 November 2001
Document order number: 9397 750 09023