NPN Silicon RF Transistor BFQ 74 ● For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) BFQ 74 74 Q62702-F788 Pin Configuration 1 2 3 4 B E C Package1) Cerec-X E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 16 V Collector-emitter voltage, VBE = 0 VCES 25 Collector-base voltage VCB0 25 Emitter-base voltage VEB0 2 Collector current IC 35 Peak collector current, f ≥ 10 MHz ICM 45 Base current IB 5 Total power dissipation, TS ≤ 115 ˚C 3) Ptot 300 mW Junction temperature Tj 175 ˚C Ambient temperature range TA – 65 … + 175 Storage temperature range Tstg – 65 … + 175 Junction - ambient 2) Rth JA ≤ 280 Junction - soldering point3) Rth JS ≤ 200 mA Thermal Resistance For detailed dimensions see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb. 1) 2) K/W BFQ BFQ 74 74 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CE0 16 – – V Collector-emitter cutoff current VCE = 25 V, VBE = 0 ICES – – 100 µA Collector-base cutoff current VCB = 15 V, IE = 0 ICB0 – – 50 nA Emitter-base cutoff current VEB = 2 V, IC = 0 IEB0 – – 10 µA DC current gain IC = 5 mA, VCE = 10 V IC = 15 mA, VCE = 10 V hFE Collector-emitter saturation voltage IC = 30 mA, IB = 3 mA Base-emitter voltage IC = 10 mA, VCE = 10 V – 50 50 110 120 250 – VCEsat – 0.13 0.3 VBE – 0.78 – V BFQ BFQ 74 74 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. – – 4.4 6 – – AC Characteristics Transition frequency IC = 5 mA, VCE = 10 V, f = 200 MHz IC = 15 mA, VCE = 10 V, f = 200 MHz fT Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Ccb – 0.3 0.4 Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Cce – 0.4 – Input capacitance VEB = 0.5 V, IC = ic = 0, f = 1 MHz Cibo – 1.35 – Output capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Cobs – 0.7 – Noise figure IC = 3 mA, VCE = 10 V, f = 10 MHz, ZS = 75 Ω IC = 5 mA, VCE = 10 V, f = 800 MHz, ZS = 50 Ω IC = 10 mA, VCE = 10 V, f = 2 GHz, ZS = ZSopt F – – – 0.9 1.4 2.5 – – 2.9 Gma1) Gms2) – – 14 9.8 – – Transducer gain IC = 15 mA, VCE = 10 V, f = 2 GHz, Z0 = 50 Ω I S21e I 2 – 9.8 – Linear output voltage two-tone intermodulation test IC = 25 mA, VCE = 10 V, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω Vo1 = Vo2 – 160 – mV Third order intercept point IC = 25 mA, VCE = 10 V, f = 800 MHz IP3 27 – dBm Power gain IC = 15 mA, VCE = 10 V, f = 2 GHz, Z0 = 50 Ω IC = 15 mA, VCE = 10 V, f = 4 GHz, Z0 = 50 Ω 1) S21e S12e 2) S21e S12e (k – √k 2– 1) GHz pF dB – BFQ BFQ 74 74 Total power dissipation Ptot = f (TA*; TS) *Package mounted on alumina Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1 MHz Transition frequency fT = f (IC) f = 200 MHz BFQ BFQ 74 74 Common Emitter Noise Parameters f Fmin Gp(Fmin) GHz dB dB Γopt RN N F50 Ω G p(F50Ω) ANG Ω – dB dB (ZS = 150 Ω) – – 1.2 – – 11.5 23.5 – 0.20 0.60 1.2 1.4 2.7 – 16.8 10 MAG IC = 3 mA, VCE = 10 V, Z0 = 50 Ω 0.01 0.7 – IC = 10 mA, VCE = 10 V, Z0 = 50 Ω 0.01 0.8 2.0 1.05 1.3 2.5 – 17.5 11.5 Noise figure F = f (IC) VCE = 10 V, f = 10 MHz (ZS = 75 Ω) 0.22 82 0.20 137 BFQ BFQ 74 74 Circles of constant noise figure F = f (ZS) and available power gain Gav = f (ZS) IC = 10 mA, VCE = 10 V, f = 800 MHz Noise figure F = f (IC) Power gain G = f (IC) VCE = 10 V, f = 800 MHz, ZLopt (G) Circles of constant noise figure F = f (ZS) and available power gain Gav = f (ZS) IC = 10 mA, VCE = 10 V, f = 2 GHz Noise figure F = f (IC) Power gain G = f (IC) VCE = 10 V, f = 2 GHz, ZLopt (G) BFQ BFQ 74 74 Common Emitter Power Gain Power gain Gms, S21e 2 = f (IC) VCE = 10 V, f = 1 GHz, Z0 = 50 Ω Power gain Gms, S21e 2 = f (IC) VCE = 10 V, f = 4 GHz, Z0 = 50 Ω Power gain Gma, S21e 2 = f (IC) VCE = 10 V, f = 2 GHz, Z0 = 50 Ω BFQ BFQ 74 74 Power gain Gma, Gms, S21e 2 = f (f) IC = 2 mA, VCE = 10 V, Z0 = 50 Ω Power gain Gma, Gms, S21e 2 = f (f) IC = 5 mA, VCE = 10 V, Z0 = 50 Ω Power gain Gma, Gms, S21e 2 = f (f) IC = 10 mA, VCE = 10 V, Z0 = 50 Ω Power gain Gma, Gms, S21e 2 = f (f) IC = 25 mA, VCE = 10 V, Z0 = 50 Ω BFQ BFQ 74 74 Common Emitter S Parameters f S11 GHz MAG S21 ANG MAG S12 S22 ANG MAG ANG MAG ANG 169 155 144 134 118 104 93 84 72 62 55 41 28 15 3 – 8 – 18 0.017 0.034 0.049 0.060 0.076 0.085 0.089 0.091 0.091 0.092 0.091 0.092 0.099 0.113 0.136 0.160 0.190 79 70 62 54 43 34 29 25 22 21 21 24 29 34 35 34 29 0.99 0.96 0.92 0.88 0.81 0.74 0.70 0.67 0.64 0.63 0.61 0.59 0.59 0.58 0.58 0.58 0.60 – 5 – 11 – 16 – 20 – 26 – 31 – 34 – 37 – 41 – 46 – 49 – 60 – 71 – 83 – 97 – 111 – 127 IC = 2 mA, VCE = 10 V, Z0 = 50 Ω 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1.2 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.96 0.93 0.88 0.84 0.77 0.71 0.68 0.65 0.63 0.63 0.63 0.64 0.66 0.68 0.68 0.71 0.72 – 16 – 33 – 50 – 64 – 89 – 110 – 127 – 141 – 158 – 172 179 161 145 133 118 107 95 6.83 6.61 6.18 5.62 4.78 3.98 3.41 2.95 2.45 2.10 1.91 1.58 1.36 1.20 1.07 0.96 0.85 S11, S22 = f (f) IC = 2 mA, VCE = 10 V, Z0 = 50 Ω S12, S21 = f (f) IC = 2 mA, VCE = 10 V, Z0 = 50 Ω BFQ BFQ 74 74 Common Emitter S Parameters (continued) f S11 GHz MAG S21 ANG MAG S12 S22 ANG MAG ANG MAG ANG 163 145 131 121 105 94 85 77 68 59 53 41 29 17 5 – 6 – 16 0.017 0.031 0.040 0.047 0.056 0.061 0.064 0.068 0.073 0.080 0.084 0.098 0.116 0.135 0.161 0.183 0.209 78 63 54 47 41 37 36 36 37 38 39 41 41 41 37 33 27 0.97 0.89 0.80 0.73 0.64 0.58 0.54 0.52 0.50 0.49 0.47 0.46 0.45 0.44 0.45 0.44 0.46 – 9 – 18 – 24 – 28 – 32 – 34 – 36 – 37 – 41 – 45 – 48 – 58 – 68 – 80 – 94 – 108 – 124 IC = 5 mA, VCE = 10 V, Z0 = 50 Ω 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1.2 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.91 0.83 0.75 0.70 0.63 0.58 0.57 0.56 0.55 0.56 0.57 0.59 0.61 0.63 0.64 0.68 0.68 – 25 – 51 – 72 – 89 – 115 – 135 – 150 – 162 – 176 173 166 152 138 128 114 104 93 14.67 13.37 11.62 9.90 7.61 5.97 4.92 4.18 3.40 2.87 2.60 2.13 1.83 1.61 1.44 1.29 1.16 S11, S22 = f (f) IC = 5 mA, VCE = 10 V, Z0 = 50 Ω S12, S21 = f (f) IC = 5 mA, VCE = 10 V, Z0 = 50 Ω BFQ BFQ 74 74 Common Emitter S Parameters (continued) f S11 GHz MAG S21 ANG MAG S12 S22 ANG MAG ANG MAG ANG 155 134 121 112 98 89 81 75 65 57 52 40 29 18 6 – 5 – 15 0.015 0.026 0.034 0.039 0.047 0.053 0.058 0.064 0.072 0.083 0.089 0.107 0.127 0.148 0.173 0.194 0.217 70 59 53 48 46 44 45 45 46 46 47 46 43 41 36 32 25 0.92 0.80 0.70 0.63 0.54 0.49 0.46 0.44 0.43 0.42 0.41 0.39 0.38 0.37 0.37 0.37 0.38 – 13 – 23 – 27 – 30 – 32 – 34 – 35 – 37 – 40 – 44 – 47 – 56 – 67 – 78 – 92 – 106 – 123 IC = 10 mA, VCE = 10 V, Z0 = 50 Ω 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1.2 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.83 0.71 0.63 0.58 0.55 0.52 0.53 0.52 0.52 0.53 0.55 0.57 0.60 0.62 0.63 0.67 0.67 – 35 – 65 – 89 – 105 – 130 – 148 – 161 – 171 176 167 161 148 135 125 112 103 92 22.64 18.55 14.98 12.22 8.96 6.91 5.64 4.76 3.87 3.25 2.95 2.41 2.06 1.82 1.62 1.46 1.32 S11, S22 = f (f) IC = 10 mA, VCE = 10 V, Z0 = 50 Ω S12, S21 = f (f) IC = 10 mA, VCE = 10 V, Z0 = 50 Ω BFQ BFQ 74 74 Common Emitter S Parameters (continued) f S11 GHz MAG S21 ANG MAG S12 S22 ANG MAG ANG MAG ANG 151 128 115 106 93 85 78 72 63 56 51 39 28 17 6 – 5 – 15 0.015 0.023 0.028 0.033 0.039 0.045 0.051 0.058 0.068 0.080 0.087 0.107 0.128 0.151 0.176 0.198 0.222 66 56 50 48 48 50 51 52 53 53 52 51 47 44 38 33 26 0.89 0.73 0.61 0.55 0.48 0.44 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.35 0.35 0.35 0.36 – 17 – 27 – 30 – 31 – 31 – 32 – 33 – 34 – 37 – 42 – 45 – 54 – 65 – 77 – 91 – 106 – 122 IC = 15 mA, VCE = 10 V, Z0 = 50 Ω 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1.2 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.79 0.66 0.59 0.55 0.52 0.51 0.52 0.51 0.51 0.53 0.54 0.56 0.59 0.62 0.63 0.66 0.67 – 44 – 81 – 107 – 123 – 145 – 161 – 171 179 169 161 156 145 133 123 111 102 91 29.12 22.58 17.37 13.71 9.66 7.32 5.92 4.97 4.02 3.36 3.04 2.49 2.12 1.87 1.67 1.50 1.35 S11, S22 = f (f) IC = 15 mA, VCE = 10 V, Z0 = 50 Ω S12, S21 = f (f) IC = 15 mA, VCE = 10 V, Z0 = 50 Ω BFQ BFQ 74 74 Common Emitter S Parameters (continued) f S11 GHz MAG S21 ANG MAG S12 S22 ANG MAG ANG MAG ANG 147 124 111 103 91 83 76 71 62 55 50 39 28 17 5 – 5 – 15 0.013 0.021 0.026 0.030 0.036 0.043 0.050 0.057 0.068 0.080 0.087 0.108 0.130 0.152 0.178 0.199 0.224 69 55 50 49 51 53 54 55 56 55 54 52 48 45 39 34 27 0.86 0.69 0.58 0.52 0.46 0.43 0.41 0.40 0.39 0.39 0.38 0.36 0.36 0.34 0.35 0.34 0.36 – 18 – 27 – 29 – 30 – 30 – 30 – 31 – 33 – 36 – 41 – 44 – 53 – 64 – 76 – 90 – 105 – 122 IC = 20 mA, VCE = 10 V, Z0 = 50 Ω 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1.2 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.73 0.61 0.56 0.53 0.51 0.50 0.51 0.51 0.51 0.53 0.55 0.57 0.59 0.62 0.63 0.67 0.68 – 51 – 89 – 115 – 130 – 151 – 165 – 174 176 167 159 154 143 132 123 110 101 91 32.84 24.03 18.02 14.07 9.80 7.40 5.97 5.01 4.04 3.38 3.06 2.50 2.13 1.87 1.67 1.50 1.35 S11, S22 = f (f) IC = 20 mA, VCE = 10 V, Z0 = 50 Ω S12, S21 = f (f) IC = 20 mA, VCE = 10 V, Z0 = 50 Ω BFQ BFQ 74 74 Common Emitter S Parameters (continued) f S11 GHz MAG S21 ANG MAG S12 S22 ANG MAG ANG MAG ANG 143 121 109 101 90 82 76 70 62 54 50 38 27 16 5 – 6 – 16 0.013 0.020 0.025 0.029 0.035 0.042 0.049 0.057 0.068 0.080 0.087 0.108 0.130 0.152 0.179 0.200 0.224 66 55 50 50 52 54 56 57 57 56 55 53 49 46 40 34 27 0.83 0.66 0.56 0.51 0.45 0.43 0.41 0.40 0.40 0.39 0.38 0.36 0.36 0.35 0.36 0.35 0.36 – 19 – 27 – 29 – 28 – 28 – 29 – 30 – 32 – 35 – 40 – 43 – 52 – 63 – 75 – 90 – 105 – 122 IC = 25 mA, VCE = 10 V, Z0 = 50 Ω 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1.2 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.69 0.59 0.54 0.51 0.51 0.50 0.52 0.51 0.52 0.53 0.55 0.57 0.60 0.62 0.64 0.67 0.68 – 55 – 94 – 120 – 135 – 154 – 167 – 176 175 165 158 153 143 131 122 110 101 90 34.86 24.49 18.09 14.03 9.73 7.33 5.90 4.96 4.00 3.34 3.02 2.47 2.10 1.85 1.65 1.48 1.33 S11, S22 = f (f), Z-plane IC = 25 mA, VCE = 10 V, Z0 = 50 Ω S12, S21 = f (f) IC = 25 mA, VCE = 10 V, Z0 = 50 Ω