NPN Silicon RF Transistor BFR 93P ● For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BFR 93P GG Q62702-F1051 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 15 V Collector-base voltage VCB0 20 Emitter-base voltage VEB0 2.5 Collector current IC 50 Base current IB 10 Total power dissipation, TS ≤ 65 ˚C 3) Ptot 280 mW Junction temperature Tj 150 ˚C Ambient temperature range TA – 65 … + 150 Storage temperature range Tstg – 65 … + 150 Junction - ambient 2) Rth JA ≤ 385 Junction - soldering point 3) Rth JS ≤ 305 mA Thermal Resistance For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb. 1) 2) K/W BFR 93P Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 15 – – – – – – 0.05 10 DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CE0 V Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 20 V, IE = 0 ICB0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 IEB0 – – 100 DC current gain IC = 25 mA, VCE = 5 V hFE 30 100 – – Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA VCEsat – 0.2 0.5 V µA BFR 93P Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. – – 5 4.7 – – AC Characteristics Transition frequency IC = 30 mA, VCE = 5 V, f = 200 MHz IC = 50 mA, VCE = 5 V, f = 200 MHz fT GHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Ccb – 0.6 0.75 Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Cce – 0.28 – Input capacitance VEB = 0.5 V, IC = ic = 0, f = 1 MHz Cibo – 2.1 – Output capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Cobs – 0.9 – Noise figure IC = 10 mA, VCE = 8 V, f = 10 MHz,ZS = 75 Ω IC = 5 mA, VCE = 8 V, f = 500 MHz,ZS = ZSopt IC = 10 mA, VCE = 8 V, f = 800 MHz, ZS = 50 Ω F – – – 1.7 1.9 2.4 – – – Power gain IC = 25 mA, VCE = 8 V, f = 800 MHz, ZS = ZSopt, ZL = ZLopt Gpe – 13 – Transducer gain IC = 25 mA, VCE = 8 V, f = 500 MHz, Z0 = 50 Ω I S21e I 2 – 15.8 – Linear output voltage two-tone intermodulation test IC = 25 mA, VCE = 8 V, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω Vo1 = Vo2 – 240 – mV Third order intercept point IC = 25 mA, VCE = 8 V, f = 800 MHz IP3 – 30.5 – dBm pF dB BFR 93P Total power dissipation Ptot = f (TA*; TS) * Package mounted on alumina Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1 MHz Transition frequency fT = f (IC) VCE = 5 V, f = 200 MHz BFR 93P Common Emitter Noise Parameters f Fmin Gp(Fmin) GHz dB dB Γopt RN N F50 Ω G p(F50Ω) ANG Ω – dB dB (ZS = 150 Ω) – – 1.6 – (ZS = 90 Ω) (ZS = ZSopt) – – – – 1.7 2.4 – – MAG IC = 2 mA, VCE = 8 V, Z0 = 50 Ω 0.01 1.0 – IC = 10 mA, VCE = 8 V, Z0 = 50 Ω 0.01 0.8 1.5 2.3 – – Noise figure F = f (ZS) VCE = 8 V, f = 10 MHz Noise figure F = f (IC) VCE = 8 V, f = 800 MHz, ZLopt (G) BFR 93P Common Emitter S Parameters f S11 GHz MAG S21 ANG S12 S22 MAG ANG MAG ANG MAG ANG 12.96 7.50 5.13 3.35 2.71 2.32 2.05 1.84 1.64 1.52 143 113 97 78 72 65 59 52 47 42 0.03 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 70 55 55 57 59 60 62 61 61 61 0.87 0.65 0.54 0.48 0.48 0.46 0.45 0.45 0.45 0.44 – 14 – 31 – 33 – 32 – 35 – 38 – 41 – 46 – 49 – 52 IC = 5 mA, VCE = 8 V, Z0 = 50 Ω 0.1 0.3 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.74 0.51 0.40 0.32 0.31 0.31 0.31 0.32 0.33 0.35 – 34 – 92 – 125 – 157 – 171 177 166 156 146 137 S11, S22 = f (f) IC = 5 mA, VCE = 8 V, Z0 = 50 Ω S12, S21 = f (f) IC = 5 mA, VCE = 8 V, Z0 = 50 Ω BFR 93P Common Emitter S Parameters (continued) f S11 GHz MAG S21 ANG MAG S12 S22 ANG MAG ANG MAG ANG 133 105 90 76 70 64 58 52 48 43 0.03 0.05 0.07 0.10 0.13 0.15 0.17 0.20 0.22 0.24 68 60 63 65 65 64 64 62 61 60 0.77 0.53 0.45 0.41 0.40 0.39 0.38 0.38 0.38 0.36 – 19 – 32 – 32 – 31 – 34 – 37 – 40 – 44 – 47 – 49 IC = 10 mA, VCE = 8 V, Z0 = 50 Ω 0.1 0.3 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.58 0.37 0.30 0.25 0.25 0.26 0.26 0.28 0.29 0.31 – 49 – 108 – 139 – 170 180 169 160 151 142 133 18.73 9.17 5.92 3.85 3.09 2.63 2.33 2.07 1.84 1.72 S11, S22 = f (f) IC = 10 mA, VCE = 8 V, Z0 = 50 Ω S12, S21 = f (f) IC = 10 mA, VCE = 8 V, Z0 = 50 Ω BFR 93P Common Emitter S Parameters (continued) f S11 GHz MAG S21 ANG MAG S12 S22 ANG MAG ANG MAG ANG 123 98 86 74 69 63 57 51 47 42 0.02 0.05 0.07 0.11 0.13 0.16 0.18 0.20 0.23 0.25 67 66 68 68 68 66 66 63 61 60 0.67 0.46 0.40 0.37 0.37 0.35 0.35 0.35 0.35 0.33 – 22 – 30 – 30 – 28 – 32 – 35 – 38 – 43 – 46 – 48 IC = 20 mA, VCE = 8 V, Z0 = 50 Ω 0.1 0.3 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.41 0.28 0.25 0.23 0.23 0.25 0.25 0.27 0.28 0.30 – 64 – 123 – 151 – 179 172 164 155 147 139 131 22.91 9.89 6.24 4.03 3.22 2.74 2.41 2.14 1.92 1.79 S11, S22 = f (f) IC = 20 mA, VCE = 8 V, Z0 = 50 Ω S12, S21 = f (f) IC = 20 mA, VCE = 8 V, Z0 = 50 Ω BFR 93P Common Emitter S Parameters (continued) f S11 GHz MAG S21 ANG MAG S12 S22 ANG MAG ANG MAG ANG 120 97 85 73 68 62 57 51 47 42 0.02 0.05 0.07 0.11 0.13 0.16 0.18 0.20 0.23 0.25 67 67 70 69 68 66 66 63 62 60 0.64 0.44 0.39 0.37 0.37 0.36 0.36 0.35 0.35 0.34 – 22 – 29 – 28 – 27 – 31 – 35 – 37 – 42 – 46 – 48 IC = 25 mA, VCE = 8 V, Z0 = 50 Ω 0.1 0.3 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.37 0.26 0.24 0.22 0.23 0.24 0.25 0.27 0.28 0.30 – 68 – 127 – 154 179 170 162 153 146 138 130 23.71 9.89 6.20 3.98 3.18 2.71 2.37 2.11 1.89 1.77 S11, S22 = f (f) IC = 25 mA, VCE = 8 V, Z0 = 50 Ω S12, S21 = f (f) IC = 25 mA, VCE = 8 V, Z0 = 50 Ω