PNP Silicon RF Transistor ● For broadband amplifiers up to 2 GHz at collector currents up to 20 mA. ● Complementary type: BFQ 71 (NPN). BFQ 76 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) BFQ 76 76 Q62702-F804 Pin Configuration 1 2 3 4 B E C Package1) Cerec-X E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 15 V Collector-base voltage VCB0 20 Emitter-base voltage VEB0 2 Collector current IC 30 mA Total power dissipation, TS ≤ 116 ˚C 3) Ptot 250 mW Junction temperature Tj 175 ˚C Ambient temperature range TA – 65 … + 175 Storage temperature range Tstg – 65 … + 175 Junction - ambient 2) Rth JA ≤ 315 Junction - soldering point 3) Rth JS ≤ 235 Thermal Resistance For detailed dimensions see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb. 1) 2) K/W BFQ 76 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CE0 15 – – V Collector-base cutoff current VCB = 10 V, IE = 0 ICB0 – – 50 nA Emitter-base cutoff current VEB = 2 V, IC = 0 IEB0 – – 10 µA DC current gain IC = 14 mA, VCE = 10 V hFE 20 50 – – Transition frequency IC = 14 mA, VCE = 10 V, f = 500 MHz fT – 5 – GHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Ccb – 0.55 – pF Input capacitance VEB = 0.5 V, IC = ic = 0, f = 1 MHz Cibo – 1.2 – Output capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Cobs – 0.9 – Noise figure IC = 5 mA, VCE = 6 V, f = 10 MHz, ZS = 75 Ω IC = 4 mA, VCE = 10 V, f = 800 MHz, ZS = ZSopt F – – 1.8 2.5 – – Power gain IC = 14 mA, VCE = 10 V, f = 800 MHz, ZS = ZSopt, ZL = ZLopt Gpe – 17 – AC Characteristics dB BFQ 76 Total power dissipation Ptot = f (TA*; TS) *Package mounted on alumina Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1 MHz Transition frequency fT = f (IC) VCE = 10 V, f = 200 MHz BFQ 76 Noise figure F = f (IC) VCE = 10 V, f = 10 MHz Noise figure F = f (IC) VCE = 10 V, f = 900 MHz