INFINEON BFQ75

PNP Silicon RF Transistor
●
For broadband amplifiers up to 2 GHz
at collector currents from 5 mA to 30 mA.
●
Complementary type: BFQ 72 (NPN).
BFQ 75
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code
(tape and reel)
BFQ 75
75
Q62702-F803
Pin Configuration
1
2
3
4
B
E
C
Package1)
Cerec-X
E
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE0
12
V
Collector-emitter voltage, VBE = 0
VCES
1
Collector-base voltage
VCB0
15
Emitter-base voltage
VEB0
2
Collector current
IC
50
mA
Total power dissipation, TS ≤ 112 ˚C 3)
Ptot
350
mW
Junction temperature
Tj
175
˚C
Ambient temperature range
TA
– 65 … + 175
Storage temperature range
Tstg
– 65 … + 175
Junction - ambient 2)
Rth JA
≤
260
Junction - soldering point 3)
Rth JS
≤
180
Thermal Resistance
For detailed dimensions see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.
1)
2)
K/W
BFQ 75
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CE0
12
–
–
V
Collector-base cutoff current
VCB = 5 V, IE = 0
ICB0
–
–
50
nA
Emitter-base cutoff current
VEB = 2 V, IC = 0
IEB0
–
–
10
µA
DC current gain
IC = 30 mA, VCE = 5 V
hFE
20
50
–
–
Transition frequency
IC = 30 mA, VCE = 5 V, f = 500 MHz
fT
–
5
–
GHz
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
Ccb
–
0.75
–
pF
Input capacitance
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Cibo
–
1.6
–
Output capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Cobs
–
1.1
–
Noise figure
IC = 10 mA, VCE = 8 V, f = 10 MHz, ZS = 50 Ω
IC = 10 mA, VCE = 8 V, f = 800 MHz, ZS = 50 Ω
F
–
–
2.2
3
–
–
Power gain
IC = 30 mA, VCE = 8 V, f = 800 MHz,
ZS = ZSopt, ZL = ZLopt
Gpe
–
14
–
AC Characteristics
dB
BFQ 75
Total power dissipation Ptot = f (TA*; TS)
*Package mounted on alumina
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1 MHz
Transition frequency fT = f (IC)
VCE = 5 V, f = 500 MHz