Ordering number:EN4697 FP201 NPN Epitaxial Planar Silicon Composite Transistors High-Frequency Amp, Differential Amp Applications Features Package Dimensions · Composite type with 2 transistors contained in the PCP package currently in use, improving the mounting efficiency greatly. · The FP201 is formed with two chips, being equivalent to the 2SC4504, placed in one package. · Excellent in thermal equilibrium and pair capability. unit:mm 2107A [FP201] 1:Base (NPN TR) 2:Collector (NPN TR) 3:Emitter Common 4:Collector (NPN TR) 5:Base (NPN TR) 6:Collector (NPN TR) 7:Collector (NPN TR) Electrical Connection 1:Base (NPN TR) 2:Collector (NPN TR) 3:Emitter Common 4:Collector (NPN TR) 5:Base (NPN TR) 6:Collector (NPN TR) 7:Collector (NPN TR) (Top view) SANYO:PCP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 30 V Collector-to-Emitter Voltage VCEO VEBO 20 V IC 300 mA 600 mA 0.75 W Emitter-to-Base Voltage Collector Current 3 Collector Current (Pulse) ICP Collector Dissipation PC Mounted on ceramic board (250mm2×0.8mm) 1unit Total Dissipation Mounted on ceramic board (250mm2×0.8mm) Junction Temperature PT Tj Storage Temperature Tstg V 1.0 W 150 ˚C –55 to +150 ˚C Electrical Characteristics at Ta=25˚C Parameter Symbol Conditons Ratings min typ max Unit Collector Cutoff Current ICBO VCB=20V, IE=0 1.0 µA Emitter Cutoff Current IEBO 5.0 µA DC Current Gain hFE1 hFE2 VEB=2V, IC=0 VCE=5V, IC=50mA DC Current Gain Ratio Base-to-Emitter Voltage Difference Gain-Bandwidth Product VCE=5V, IC=300mA hFE1(smal- VCE=5V, IC=50mA l/large) VBE(large- VCE=5V, IC=100mA small Output Capacitance fT Cob Reverse Transfer Capacitance Cre C-E Saturation Voltage B-E Saturation Voltage VCE(sat) VBE(sat) 60 200 20 0.7 0.95 3.0 15 mV VCE=5V, IC=50mA 2.2 GHz VCB=10V, f=1MHz VCB=10V, f=1MHz 2.9 pF IC=200mA, IB=20mA 0.2 0.5 V IC=200mA, IB=20mA 0.9 1.2 V 2.6 pF Note:The specifications shown above are for each individual transistor. However, the DC Current Gain Ratio and Base Emitter to Voltage Difference are for the paired transistors. Marking:201 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/41594HO (KOTO) BX-0511 No.4697-1/3 FP201 No.4697-2/3 FP201 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4697-3/3