Ordering number:EN3289 FC135 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions · On-chip bias resistance (R1=4.7kΩ)). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC135 is formed with two chips, being equivalent to the 2SA1510, placed in one package. · Excellent in thermal equilibrium and pair capability. unit:mm 2067 [FC135] Electrical Connection E1:Emitter 1 B1:Base 1 C2:Collector 2 E2:Emitter 2 B2:Base 2 C1:Collector 1 E1:Emitter 1 B1:Base 1 C2:Collector 2 E2:Emitter 2 B2:Base 2 C1:Collector 1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –50 V Collector-to-Emitter Voltage VCEO VEBO –50 V IC –100 Emitter-to-Base Voltage Collector Current Peak Collector Current ICP Collector Dissipation PC Total Power Dissipation Junction Temperature Storage Temperature Tstg –5 V mA –200 mA 200 mW PT 300 mW Tj 150 ˚C –55 to +150 ˚C 1 unit Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditons Ratings min typ max Unit Collector Cutoff Current ICBO VCB=–40V, IE=0 –0.1 µA Emitter Cutoff Current IEBO VEB=–5V, IC=0 –0.1 µA DC Current Gain Gain-Bandwidth Product hFE fT VCE=–5V, IC=–10mA VCE=–10V, IC=–5mA Output Capacitance Cob VCB=–10V, f=1MHz C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage VCE(sat) IC=–10mA, IB=–0.5mA V(BR)CBO IC=–10µA, IE=0 V(BR)CEO IC=–100µA, RBE=∞ Input OFF-State Voltage VI(off) Input ON-State Voltage VI(on) Input Resistance VCE=–5V, IC=–100µA VCE=–0.2V, IC=–10mA R1 100 200 MHz 5.1 –0.1 pF –0.3 –50 V V –50 V –0.4 –0.55 –0.8 –0.6 –1.0 –2.0 V V 3.3 4.7 6.1 kΩ Note:The specifications shown above are for each individual transistor. Marking:135 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/2190MO, TS No.3289-1/2 FC135 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.3289-2/2