Ordering number:EN3115 FC117 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications Features Package Dimensions · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC117 is formed with two chips, being equivalent to the 2SA1753, placed in one package. · Low collector to emitter saturation voltage. · Excellent in thermal equilibrium and pair capability. unit:mm 2067 [FC117] Electrical Connection E1:Emitter1 B1:Base1 C2:Collerctor2 E2:Emitter2 B2:Base2 C1:Collector1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit –20 V Collector-to-Emitter Voltage VCBO VCEO –15 V Emitter-to-Base Voltage VEBO –5 Collector Current IC Collector Current (Pulse) –500 I CP Base Current IB Collector Dissipation PC Total Power Dissipation Junction Temperature PT Tj Storage Temperature Tstg –1 V mA A –100 mA 200 mW 300 mW 150 ˚C –55 to+150 ˚C 1 unit Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage Symbol Conditions Ratings min typ max Unit ICBO VCB=–15V, IE=0 –0.1 µA IEBO hFE(1) VEB=–4V, IC=0 –0.1 µA VCE=–2V, IC=–10mA 160 560 hFE(2) hFE(small/ large) VCE=–2V, IC=–400mA 70 VCE=–2V, IC=–10mA 0.8 fT Cob VCE=–2V, IC=–50mA VCE=–10V, f=1MHz 400 VCE(sat)1 IC=–5mA. IB=–0.5mA –15 –35 mV VCE(sat)2 IC=–200mA. IB=–10mA –200 –360 mV VBE(sat) IC=–200mA. IB=–10mA –0.95 –1.2 0.98 MHz 6.5 pF V C-B Breakdown Voltage V(BR)CBO IC=–10µA, IE=0 –20 V C-E Breakdown Voltage V(BR)CEO IC=–1mA, RBE=∞ V(BR)EBO IE=–10µA, IC=0 –15 V –5 V E-B Breakdown Voltage Note: The specifications shown above are for each individual transistor. Marking:117 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/5129MO, TS No.3115-1/3 FC117 No.3115-2/3 FC117 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.3115-3/3