Ordering number:EN3190 FC121 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions · On-chip bias resistances (R1=2.2kΩ, R2=10kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC121 is formed with two chips, being equivalent to the 2SA1502, placed in one package. · Excellent in thermal equilibrium and pair capability. unit:mm 2066 [FC121] Electrical Connection C1:Collector 1 C2:Collector 2 B2:Base2 EC:Emitter Common B1:Base 1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit –50 V Collector-to-Emitter Voltage VCBO VCEO –50 V Emitter-to-Base Voltage VEBO –6 Collector Current IC Collector Current (Pulse) ICP Collector Dissipation PC Total Dissipation Junction Temperature PT Tj Storage Temperature Tstg –100 V mA –200 mA 200 mW 300 mW 150 ˚C –55 to +150 ˚C 1 unit Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditons Ratings min typ max Unit Collector Cutoff Current ICBO VCB=–40V, IE=0 –0.1 µA Collector Cutoff Current ICEO –0.5 µA Emitter Cutoff Current IEBO hFE VCE=–40V, IB=0 VEB=–5V, IC=0 –590 µA DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage fT Cob VCE=–5V, IC=–10mA VCE=–10V, IC=–5mA VI(off) Input ON-State Voltage VI(on) Input Resistance R1 Resistance Ratio R1/R2 VCE=–5V, IC=–100µA VCE=–0.2V, IC=–10mA –410 50 200 VCB=–10V, f=1MHz VCE(sat) IC=–10mA, IB=–0.5mA V(BR)CBO IC=–10µA, IE=0 V(BR)CEO IC=–100µA, RBE=∞ Input OFF-State Voltage –315 MHz 5.1 pF –0.1 –0.3 –50 V V –50 V –0.5 –0.7 –0.9 –0.7 –1.0 –1.8 V V 1.2 2.2 2.9 kΩ 0.198 0.22 0.242 Note:The specifications shown above are for each individual transistor. Marking:121 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/6299MO, TS No.3190-1/2 FC121 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.3190-2/2