SFH6943 Low Current Input Mini Optocoupler FEATURES • Transistor Optocoupler in SOT223/10 Package • End Stackable, 1.27 mm Spacing • Low Current Input • Very High CTR, 150% Typical at IF=1 mA, VCE=5 V • Good CTR Linearity Versus Forward Current • Minor CTR Degradation • Field Effect Stable by TRIOS (TRansparent IOn Shield) • High Collector-Emitter Voltage, VCEO=70 V • Low Coupling Capacitance • High Common Mode Transient Immunity • Isolation Test Voltage: 1768 VRMS APPLICATIONS • Telecommunication • SMT • PCMCIA • Instrumentation DESCRIPTION The SFH6943 is a four channel mini-optocoupler suitable for high density packaged PCB application. It has a minimum of 1768 VRMS isolation from input to output. The device consists of four phototransistors as detectors. Each channel is individually controlled. The optocoupler is housed in a SOT223/10 package. All the cathodes of the input LEDs and all the collectors of the output transistors are commoned enabling a pin count reduction from 16 pins to 10 pins—a significant space savings as compared to four channels that are electrically isolated individually. Dimensions in Inches (mm) 10° Anode 1 10 Emitter 1 Anode 2 9 Emitter 2 Common 3 Cathode Anode 4 8 Common Collector 7 Emitter 3 Anode 5 6 Emitter 4 .016 (.41) .018 (.46) .035 (.90) 0.004 (.10) max. .063 ±.004 (1.60 ±.10) 0.138 ±.004 (3.51 ±.10) 0.020 ±.004 (.51 ±.10) 7° .256 ±.004 .043 (6.50 ±.10) (1.09) .200 ±.005 (5.08 ±.13) .002 +.002 –.001 (.05 +.05 –.03) 10° .01 (.25) R 0°–7° 0.010 R (.25) 45° 7° 0.020 (.51) min. .276 ±.008 (7.01 ±.20) Absolute Maximum Ratings Emitter(GaAlAs) Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 V DC Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 mA Surge Forward Current (tP≤10 µs) . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Total Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 mW Detector (Si Phototransistor) Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .70 V Emitter-Collector Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 V Collector Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Surge Collector Current (tP<1 ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA Total Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 mW Package Insulation Isolation Test Voltage (between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74), t=1 sec. . . . . . . . .1768 VRMS Creepage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ≥4 mm Clearance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ≥4 mm Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 . . . . . . . 175 Isolation Resistance VIO=100 V, TA=25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ≥1011 Ω VIO=100 V, TA=100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ≥1010 Ω Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . .–55 to +150°C Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . .–55 to +100°C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C Soldering Temperature (t=10 sec. max.) Dip soldering plus reflow soldering processes . . . . . . . . . . . . . . . . . 260°C 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 2–319 March 4, 2000-23 Characteristics (TA=25°C, unless otherwise specified) Description Symbol Min. Typ. Max. Unit Forward Voltage, IF=5 mA VF — 1.25 — V Reverse Current, VR=3 V IR — 0.01 10 µA Capacitance, VR=0 V, f=1 MHz C0 RthJA — 5 — pF — 1000 — K/W VCEO 70 — — V Emitter-Collector Voltage, IEC=10 µA VECO 7 — — V Capacitance, VCE=5 V, f=1 MHz CCE RthJA — 6 — pF — 500 — K/W Coupling Capacitance CC — 1 — pF Description Symbol -2 -3 -4 Unit Condition Coupling Transfer Ratio 63–200 100–320 160–500 % Coupling Transfer Ratio IE/ IF IE/ IF typ, 100 (≥32) typ, 160 (≥50) typ, 250 (≥80) % IF=1 mA, VCE=1.5 V IF=0.5 mA, VCC=5 V Collector-Emitter Leakage Current ICEO 50 50 50 nA VCE=10 V Emitter (IR GaAs) Thermal Resistance Detector (Si Phototransistor) Collector-Emitter Voltage, ICE=10 µA Thermal Resistance Package Figure 1. Switching times (non-saturated), typical IF→ VCC=5 V F=10 KHz VO DF=50% IE=2 mA↓ RE=100 Ω Figure 2. Switching waveform (non-saturated) IF V0 tF tR tON tOFF Description Symbol Value Turn-on Time ton 3 Rise Time tr 2.6 Turn-off Time toff 3.1 Fall Time tf 2.8 Unit µs Test Conditions IE=2 mA RE=100 Ω TA=25°C VCC=5 V 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) SFH6943 2–320 March 4, 2000-23 85 50 ° 2 5° –2 ° 5° Figure 3. LED current versus LED voltage VF=f(IF) 101 Figure 6. Collector-emitter leakage current (typ.) IF=0, TA=25°C, ICEO=f(VCE) Figure 9. TA=25°C, IF=1 mA, VCC=5 V, ton, tr, toff,tt=f(RL) 10 3 103 10 2 10 100 toff 101 10 –1 t / us 100 ICEO/nA I F / mA tf ton 101 10 –1 tr 10 –2 10 –2 .8 .9 1 1.1 VF/V 1.2 1.3 1.4 10 –3 0 10 20 30 40 50 60 70 VCE/ V SFH6941/f1 Figure 4. Non-saturated current transfer normalized to IF=1 mA, NCTR=f(IF) Figure 7. Permissible forward current diode IF=f(TA=25°C) 100 102 103 RL/OHM 104 105 Figure 10. Transistor output characteristics TA=25°C, ICE=1 (VCE, IF,) 2.0 8 1.8 1.6 7 6 1.2 5 1.0 4 I F /m A NCTR 1.4 V C E =1.5V T A =25°C I F =1mA .8 3 .6 2 .4 1 .2 0 0 10 – 4 10 – 3 0 10 20 30 40 50 60 70 80 90 100 10 – 2 T A /°C I F /A Figure 5. Transistor capacitance (typ.)TA=25°C, f=1MHz, CCE=f(VCE) Figure 8. Permissible power dissipation Ptot=f(TA) 25.0 30 22.5 20.0 25 17.5 Transistor 20 12.5 CCE 15 P to t /m W CCE/PF 15.0 10.0 7.5 Diode 10 5.0 5 2.5 0 10 –2 10 –1 10 0 VCE/V 101 102 0 0 10 20 30 40 50 60 70 80 90 100 T A /°C 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) SFH6943 2–321 March 4, 2000-23