SFH 608 PHOTOTRANSISTOR, 5.3 KV, TRIOS LOW CURRENT OPTOCOUPLER FEATURES • Very High CTR at IF=1 mA, VCE=0.5 V - SFH608-2, 63-125% - SFH608-3, 100-200% - SFH608-4, 160-320% - SFH608-5, 250-500% • Specified Minimum CTR at IF=0.5 mA, VCE=1.5 V: ≥ 32% (typ. 120%) • Good CTR Linearity with Forward Current • Low CTR Degradation • High Collector-Emitter Voltage VCEO=55 V • Isolation Test Voltage: 5300 VACRMS • Low Current Input • Low Coupling Capacitance • High Common Mode Transient Immunity • Phototransistor Optocoupler in 6 Pin DIP Package • Field Effect Stable: TRIOS* V • VDE 0884 Available with Option 1 • Underwriters Lab File #E52744 • Applications - Telecommunications - Industrial Controls - Office Machines - Microprocessor System Interfaces Dimensions in inches (mm) Pin One ID 3 The SFH 608 is an optocoupler designed for high current transfer ratio at low input currents with the output transistor saturated. This makes the device ideal for low current switching applications. The SFH608 is packaged in a six pin plastic DIP. *TRIOS—TRansparent IOn Shield 1 Anode 1 .248 (6.30) .256 (6.50) 6 Base Cathode 2 4 5 5 Collector NC 3 6 4 Emitter .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .130 (3.30) .150 (3.81) 18° typ. .020 (.051) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. D E DESCRIPTION 2 .010 (.25) .014 (.35) .110 (2.79) .150 (3.81) .300 (7.62) .347 (8.82) Maximum Ratings (TA=25°C) Emitter Reverse Voltage ...................................................................................6 V DC Forward Current ........................................................................50 mA Surge Forward Current (tp≤10 µs) ................................................... 2.5 A Total Power Dissipation ................................................................. 70 mW Detector Collector-Emitter Voltage .................................................................. 55 V Collector-Base Voltage .......................................................................55 V Emitter-Base Voltage ..........................................................................7 V Collector Current ............................................................................ 50 mA Surge Collector Current (tp≤1 ms) ................................................100 mA Total Power Dissipation ............................................................... 150 mW Isolation Test Voltage (between emitter and detector, refer to climate DIN 40046 part 2 Nov. 74) (t=1 sec.).............. 5300 VACRMS Creepage ................................................................................................. ≥7 mm Clearance................................................................................................. ≥7 mm Comparative Tracking Index per DIN IEC 112/VDE 0303, part1 ................................................... 175 Isolation Resistance VIO=500 V, TA=25°C ......................................................................... ≥1012 Ω VIO=500 V, TA=100°C .......................................................................≥1011 Ω Storage Temperature Range .......................................... -55°C to +150°C Operating Temperature Range....................................... -55°C to +100°C Junction Temperature......................................................................100°C Soldering Temperature (max. 10 sec., dip soldering: distance to seating plane≥1.5 mm) .............................................260°C 5–1 Characteristics (TA=25°C, unless otherwise specified) Symbol Typ Unit Condition Forward Voltage VF 1.1 (≤ 1.5) V IF=5 mA Reverse Voltage VR (≥ 6) V IR= 10 µA Reverse Current IR 0.01 (≤ 10) µA VR=6 V Capacitance CO 25 pF VR=0 V, f=1 MHz Thermal Resistance RthJA 1070 K/W Voltage, Collector-Emitter VCEO ≥ 55 V ICE=10 µA Voltage, Emitter-Base VBEO ≥7 V IEB=10 µA Capacitance CCE 10 pF VCE=5 V, f=1 MHz Capacitance CCB 16 pF VCE=5 V, f=1 MHz Capacitance CEB 10 pF VCE=5 V, f=1 MHz Thermal Resistance RthJA 500 K/W Coupling Capacitance CC 0.60 pF Coupling Transfer Ratio SFH 608-2 IC/IF SFH 608-3 IC/IF SFH 608-4 IC/IF SFH 608-5 IC/IF 63-125 75 (≥ 32) 100-200 120 (≥ 50) 160-320 200 (≥ 80) 250-500 300 (≥ 125) % % % % % % % % IF=1 mA, VCE=0.5 V IF=0.5 mA, VCE=1.5 V IF=1 mA, VCE=0.5 V IF=0.5 mA, VCE=1.5 V IF=1 mA, VCE=0.5 V IF=0.5 mA, VCE=1.5 V IF=1 mA, VCE=0.5 V IF=0.5 mA, VCE=1.5 V Saturation Voltage, Collector-Emitter SFH 608-2 SFH 608-3 SFH 608-4 SFH 608-5 VCEsat VCEsat VCEsat VCEsat 0.25 (≤ 0.4) 0.25 (≤ 0.4) 0.25 (≤ 0.4) 0.25 (≤ 0.4) V V V V IC=0.32 mA, IF=1 mA IC= 0.5 mA, IF=1 mA IC= 0.8 mA, IF=1 mA IC=1.25 mA, IF=1 mA Leakage Current, Collector-Emitter ICEO 10 (≤ 200) nA VCE=10 V Figure 2. Switching times TA=25°C, IF=1 mA, VCC=5 V, tON, tR, tOFF, tF, =f(RL) Emitter Detector Figure 3. Current transfer ratio (typ.) VCE=0.5 V, CTR=f(TA, IF) Package Figure 1. Schematic Figure 4. Current transfer ratio (typ.) VCE=1.5 V, CTR=f(TA, IF) RL IF VCC IC 47Ω IC=2 mA (to adjust by IF), RL=100 Ω, TA=25°C, VCC=5 V Description Symbol Values Unit Turn-On Time tON 8 µs Rise Time tR 5 µs Turn-Off Time tOFF 7.5 µs Fall Time tF 7 µs SFH608 5–2 Figure 5. Diode forward voltage (typ.) TA=25°C, VF=f(IF) Figure 8. Output characteristics (typ.) TA=25°C, ICE=f(VCE, IF) Figure 11. Transistor capacitance (typ.) TA=25°C, f=1 MHz, CCE=f(VCE) CCB=f (VCB), CEB=f (VEB) Figure 6. Diode forward voltage (typ.) IF =1 mA, VF=f(TA) Figure 9. Permissible forward current diode IF=f(TA) Figure 12. Collector-emitter leakage current IF=0, VCE=10 V, ICEO=f(TA) Figure 7. Output characteristics (typ.) TA=25°C, ICE=f(VCE, IB) Figure 10. Permissible power dissipation PTOT=f(TA) SFH608 5–3