EW SFH6941 N LOW CURRENT INPUT MINI OPTOCOUPLER Preliminary Data Sheet FEATURES • Transistor Optocoupler in SOT223 Package • End Stackable, 1.27 mm Spacing • Low Current Input • Very High CTR, 150% Typical at IF=1 mA, VCE=0.5V • Good CTR Linearity Versus Forward Current • Minor CTR Degradation • Field Effect Stable by TRIOS (TRansparent IOn Shield) • High Collector-Emitter Voltage, VCEO=70 V • Low Coupling Capacitance • High Common Mode Transient Immunity • Isolation Test Voltage: 2500 VDC Package Dimensions in Inches (mm) Anode 1 1 10 Emitter 1 Anode 2 2 9 Emitter 2 Common Cathode .287 (7.3) .264 (6.6) .145 (3.7) .130 (3.3) 10° typ. APPLICATIONS • Telecommunication • SMT • PCMCIA • Instrumentation .013 (.24) .009 (.32) 15° max. .020 (.5) min. 3 8 Common Collector Anode 3 4 7 Emitter 3 Anode 4 5 6 Emitter 4 .067 (1.7) .059 (1.5) +.004 .016 –.002 (+.1) (.4) (–.05) .256 ±.008 (6.5 ±.2) .050 (1.27) .043 ±.020 (1.1 ±.5) DESCRIPTION The SFH6941 is a four channel mini-optocoupler suitable for high density packaged PCB application. It has a minimum of 2500 VDC isolation from input to output. The device consists of four phototransistors as detectors. Each channel is individually controlled. The optocoupler is housed in a SOT223 package. All the cathodes of the input LEDs and all the collectors of the output transistors are commoned enabling a pin count reduction from 16 pins to 10 pins—a significant space savings as compared to four channels that are electrically isolated individually. Absolute Maximum Ratings Emitter(GaAlAs) Reverse Voltage .................................................................................. 3 V DC Forward Current ......................................................................... 5 mA Surge Forward Current (tP≤10 µs) ................................................ 100 mA Total Power Dissipation ..................................................................10 mW Detector (Si Phototransistor) Collector-Emitter Voltage .................................................................. 70 V Emitter-Collector Voltage ..................................................................... 7 V Collector Current ............................................................................ 10 mA Surge Collector Current (tP<1 ms) ................................................. 20 mA Total Power Dissipation ..................................................................20 mW Package Insulation Isolation Test Voltage (between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74) ......................... 2500 VDC Creepage .................................................................................................≥4 mm Clearance .................................................................................................≥4 mm Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 ...................................................175 Isolation Resistance VIO=100 V, TA=25°C.................................................................. ≥1011 Ω VIO=100 V, TA=100°C................................................................ ≥1010 Ω Storage Temperature Range ............................................. –55 to +150°C Ambient Temperature Range............................................. –55 to +100°C Junction Temperature ......................................................................100°C Soldering Temperature (t=10 sec. max.)........................................260°C Dip soldering plus reflow soldering processes 5–282 Characteristics (TA=25°C, unless otherwise specified) Description Symbol Min. Typ. Max. Unit Emitter (IR GaAs) Forward Voltage, IF=5 mA VF 1.25 V Reverse Current, VR=3 V IR 0.01 Capacitance, VR=0 V, f=1 MHz C0 5 pF Thermal Resistance RthJA 1000 °K/W 10 µA Detector (Si Phototransistor) Collector-Emitter Voltage, ICE=10 µA VCEO 70 V Emitter-Collector Voltage, IEC=10 µA VECO 7 V Capacitance, VCE=5 V, f=1 MHz CCE 6 pF Thermal Resistance RthJA 500 °K/W CC 1 pF Package Coupling Capacitance Values Description Symbol Coupling Transfer Ratio IF=1 mA, VCE=0.5 V IF=0.5 mA, VCE=1.5 V Unit -3 -4 -5 IC/ IF IC/ IF 100–200 120 (≥50) 160–320 200 (≥80) 250–500 300 (≥125) % Collector-Emitter Saturation Voltage IF=1 mA VCEsat 0.25 (≤0.4) (IC=0.5 mA) 0.25 (≤0.4) (IC=0.8 mA) 0.25 (≤0.4) (IC=1.25 mA) V Collector-Emitter Leakage Current VCE=10 V ICEO 50 50 50 nA Switching times, typical IF RL GND IC VCC 47Ω Description Symbol Values Turn-on Time ton 3 Rise Time tr 2.6 Turn-off Time toff 3.1 Fall Time tf 2.8 Unit µs Test Conditions IF=2 mA RL=100 Ω TA=25°C VCC=5 V SFH6941 5–283 Figure 4. Transistor output characteristics TA=25°C, ICE=f(VCE, IF) 85 50 ° 2 5° –2 ° 5° Figure 1. LED current versus LED voltage VF=f(IF) 101 Figure 7. Permissible forward current diode IF=f(TA=25°C) 8 25 7 20 15 I F = 4mA 10 I F = 3mA 10 –1 6 5 I F / mA ICE/mA I F / mA 100 I F = 5mA 4 3 I F = 2mA 2 I F = 1mA 1 5 .8 .9 1 1.1 VF/V 1.2 1.3 1.4 Figure 2. Saturated current transfer ratio normalized to IIF=1 mA, NCTR=f(IF) 0 10 20 30 40 50 60 70 80 90 100 102 T A /°C Figure 8. Permissible power dissipation Ptot=f(TA) 30 22.5 25 VCE=0.5V T A = 2 5° C I F =1m A 20.0 Transistor 17.5 20 15.0 CCE/PF 1. 2 NCTR 101 25.0 1. 8 1. 4 10–1 100 VCE/V Figure 5. Transistor capacitance (typ.)TA=25°C, f=1MHz, CCE=f(VCE) 2. 0 1. 6 0 0 10–2 1. 0 .8 15 12.5 P t o t /mW 10 –2 CCE 10.0 7.5 .6 5.0 .4 Diod e 10 5 2.5 .2 0 0 0 10 –4 10–3 10 –2 10–2 10 –1 10 0 101 0 10 20 30 40 50 60 70 80 90 100 102 VCE/V T A /°C Figure 6. Collector-emitter leakagecurrent (typ.) IF=0, TA=25°C, ICEO=f(VCE) Figure 9. TA=25°C, IF=1 mA, VCC=5 V, ton, tr, toff,tt=f(RL) IF/A Figure 3. Non-saturated current transfer normalized to IF=1 mA, NCTR=f(IF) 1.8 1.6 1.4 103 10 3 2.0 10 2 V C E =1.5V T A =25°C I F =1mA 10 toff 101 tf .8 t / us 100 1.0 ICEO/nA NCTR 1.2 ton 101 tr 10 –1 .6 .4 10 –2 .2 10 –3 0 10 – 4 10 – 3 I F /A 10 –2 0 10 20 30 40 VCE/ V 50 60 70 100 102 103 RL/OHM 104 105 SFH6941 5–284