ILD3 QUAD CHANNEL ILQ3 DUAL CHANNEL Phototransistor Optocoupler FEATURES • Current Transfer Ratio at IF=1.6 mA, 300% Min. • High Collector-Emitter Voltage • BVCEO=50 V • Field-Effect Stable by TRansparent IOn Shield (TRIOS) • Double Molded Package Offers Isolation Test Voltage 5300 VRMS, 1.0 sec. • Underwriters Lab File #E52744 Maximum Ratings (Each Channel) Emitter Reverse Voltage ...................................................6.0 V Continuous Forward Current ............................. 60 mA Surge Current ...................................................... 2.5 A Power Dissipation............................................100 mW Derate Linearly from 25°C ...........................1.3 mW/°C Detector Collector-Emitter Reverse Voltage.........................50 V Collector Current ............................................... 50 mA Collector Current (t<1.0 ms)............................ 400 mA Total Power Dissipation ...................................200 mW Derate Linearly from 25°C ...........................2.6 mW/°C Package Isolation Test Voltage (between emitter and detector, refer to standard climate 23°C/50% RH, DIN50014) t=1 sec. ........ 5300 VRMS Creepage ...................................................... ≥7.0 mm Clearance ...................................................... ≥7.0 mm Isolation Resistance VIO=500 V, TA=25°C............................... RIO=1012 Ω VIO=500 V, TA=100°C............................. RIO=1011 Ω Power Dissipation............................................250 mW Derate Linearly from 25°C ...........................3.3 mW/°C Storage Temperature Range .................–40 to +150°C Operating Temperature Range..............–40 to +100°C Junction Temperature.........................................100°C Soldering Temperature, 2.0 mm from case bottom...............................260°C Dimensions in Inches (mm) Dual Channel pin one ID 4 3 2 1 5 6 7 8 .255 (6.48) .268 (6.81) Anode 1 8 Emitter Cathode 2 7 Collector Cathode 3 6 Collector Anode 4 5 Emitter .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4° typ. .300 (7.62) typ. .031 (0.79) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .100 (2.54) typ. .018 (.46) .022 (.56) 3°–9° .008 (.20) .012 (.30) Anode 1 Quad Channel pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) 10 ° .050 (1.27) 11 12 13 14 15 16 15 Collector Cathode 3 14 Collector Anode 4 13 Emitter Anode 5 12 Emitter Cathode 6 11 Collector Cathode 10 Collector 7 Anode 8 .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .018 (.46) .022 (.56) .020(.51) .035 (.89) .100 (2.54)typ. 9 Emitter .300 (7.62) typ. .031(.79) .130 (3.30) .150 (3.81) 4° 16 Emitter Cathode 2 .050 (1.27) 10° typ. 3°–9° .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) DESCRIPTION The ILD/Q3 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The ILD/Q3 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. Also these couplers can be used to replace relays and transformers in many digital interface applications such as CRT modulation. The ILD3 has two isolated channels in a single DIP package and the ILQ3 has four isolated channels per package. See Appnote 45, “How to Use Optocoupler Normalized Curves”. 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 2–177 March 8, 2000-01 Characteristics Emitter (IR GaAs) Symbol Min. Typ. Max. Unit Test Condition Forward Voltage VF — 1.25 1.65 V IF=60 mA Reverse Current IR — 0.01 10 µA VR=6.0 V Capacitance C0 — 25 — pF VR=0 V, f=1.0 MHz Thermal Resistance, Junction to Lead RTHJL — 750 — K/W — Collector-Emitter Leakage Current ICEO — 5.0 70 nA VCE=15 V Capacitance CCE — 6.8 — pF VCE=5.0 V, f=1.0 MHz Thermal Resistance, Junction to Lead RTHJL — 500 — K/W — Saturated Current Transfer Ratio, ILD/Q3-1 CTRSAT 300 — — % IF=1.6 mA, VCE=0.4 V Saturated Current Transfer Ratio, ILD/Q3-2 CTRSAT 100 — — % IF=1.0 mA, VCE=0.4 V Common Mode Rejection Output High CMH — 5000 — V/µs Detector Package Transfer Characteristics (Each Channel) VCM=50 VP-P, RL=10 kΩ, IF=0 mA Common Mode Rejection Output Low CML — 5000 — V/µs VCM=50 VP-P, RL=10 kΩ, IF=0 mA Common Mode Coupling Capacitance CCM — 0.01 — pF — Package Capacitance CIO — 0.8 — pF VIO=0 V, f=1.0 MHz 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) ILD/Q3 2–178 March 8, 2000-01