SEME-LAB IRF044

IRF044
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
39.95 (1.573)
max.
30.40 (1.197)
30.15 (1.187)
4.09 (0.161)
3.84 (0.151)
dia.
2 plcs.
11.18 (0.440)
10.67 (0.420)
2
1
26.67 (1.050)
max.
17.15 (0.675)
16.64 (0.655)
VDSS
ID(cont)
RDS(on)
60V
44A
Ω
0.028Ω
FEATURES
• HERMETICALLY SEALED TO–3 METAL
PACKAGE
7.87 (0.310)
6.99 (0.275)
12.07 (0.475)
11.30 (0.445)
1.78 (0.070)
1.52 (0.060)
20.32 (0.800)
18.80 (0.740)
dia.
1.57 (0.062)
1.47 (0.058)
dia.
2 plcs.
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE
TO–3 Metal Package
Pin 1 – Gate
Pin 2 – Source
Case – Drain
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
±20V
VGS
Gate – Source Voltage
ID
Continuous Drain Current
(VGS = 0 , Tcase = 25°C)
44A
ID
Continuous Drain Current
(VGS = 0 , Tcase = 100°C)
27A
IDM
Pulsed Drain Current 1
176A
PD
Power Dissipation @ Tcase = 25°C
125W
Linear Derating Factor
1.0W/°C
EAS
Single Pulse Avalanche Energy 2
340mJ
dv/dt
Peak Diode Recovery 3
4.5V/ns
TJ , Tstg
Operating and Storage Temperature Range
TL
Lead Temperature
1.6mm (0.63”) from case for 10 sec.
–55 to 150°C
300°C
Notes
1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
2) @ VDD = 25V , L ≥ 200µH , RG = 25Ω , Peak IL = 44A , Starting TJ = 25°C
3) @ ISD ≤ 44A , di/dt ≤ 250A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 9.1Ω
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/96
IRF044
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
∆BVDSS Temperature Coefficient of
∆TJ
Breakdown Voltage
Static Drain – Source On–State
RDS(on)
Resistance 1
VGS(th) Gate Threshold Voltage
gfs
Forward Transconductance 1
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Test Conditions
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 27A
VGS = 10V
ID = 44A
VDS = VGS
ID = 250mA
VDS ≥ 15V
IDS = 27A
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 44A
VDS = 0.5BVDSS
trr
Qrr
ton
LD
LS
PACKAGE CHARACTERISTICS
Internal Drain Inductance (measured from 6mm down drain lead to centre of die)
Internal Source Inductance (from 6mm down source lead to source bond pad)
RθJC
RθCS
RθJA
THERMAL CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Case – Sink
Thermal Resistance Junction – Ambient
VSD
Typ.
Max.
Unit
V
60
V / °C
0.68
0.028
0.032
4
2
17
25
250
100
–100
2400
1100
230
39
6.7
18
Ω
V
S (É)
µA
nA
pF
88
15
52
23
130
81
79
VDD = 30V
ID = 44A
RG = 9.1Ω
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current 2
IS = 44A
TJ = 25°C
Diode Forward Voltage 1
VGS = 0
Reverse Recovery Time
IF = 44A
TJ = 25°C
Reverse Recovery Charge 1
di / dt ≤ 100A/µs VDD ≤ 50V
Forward Turn–On Time
IS
ISM
Min.
nC
ns
44
176
A
2.5
V
220
1.6
ns
µC
Negligible
5.0
13
nH
1.0
°C/W
0.12
30
Notes
1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/96