IRF044 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on) 60V 44A Ω 0.028Ω FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 12.07 (0.475) 11.30 (0.445) 1.78 (0.070) 1.52 (0.060) 20.32 (0.800) 18.80 (0.740) dia. 1.57 (0.062) 1.47 (0.058) dia. 2 plcs. • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE TO–3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) ±20V VGS Gate – Source Voltage ID Continuous Drain Current (VGS = 0 , Tcase = 25°C) 44A ID Continuous Drain Current (VGS = 0 , Tcase = 100°C) 27A IDM Pulsed Drain Current 1 176A PD Power Dissipation @ Tcase = 25°C 125W Linear Derating Factor 1.0W/°C EAS Single Pulse Avalanche Energy 2 340mJ dv/dt Peak Diode Recovery 3 4.5V/ns TJ , Tstg Operating and Storage Temperature Range TL Lead Temperature 1.6mm (0.63”) from case for 10 sec. –55 to 150°C 300°C Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) @ VDD = 25V , L ≥ 200µH , RG = 25Ω , Peak IL = 44A , Starting TJ = 25°C 3) @ ISD ≤ 44A , di/dt ≤ 250A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 9.1Ω Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/96 IRF044 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ Breakdown Voltage Static Drain – Source On–State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance 1 IDSS Zero Gate Voltage Drain Current IGSS IGSS Forward Gate – Source Leakage Reverse Gate – Source Leakage Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Test Conditions VGS = 0 ID = 1mA Reference to 25°C ID = 1mA VGS = 10V ID = 27A VGS = 10V ID = 44A VDS = VGS ID = 250mA VDS ≥ 15V IDS = 27A VGS = 0 VDS = 0.8BVDSS TJ = 125°C VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 44A VDS = 0.5BVDSS trr Qrr ton LD LS PACKAGE CHARACTERISTICS Internal Drain Inductance (measured from 6mm down drain lead to centre of die) Internal Source Inductance (from 6mm down source lead to source bond pad) RθJC RθCS RθJA THERMAL CHARACTERISTICS Thermal Resistance Junction – Case Thermal Resistance Case – Sink Thermal Resistance Junction – Ambient VSD Typ. Max. Unit V 60 V / °C 0.68 0.028 0.032 4 2 17 25 250 100 –100 2400 1100 230 39 6.7 18 Ω V S (É) µA nA pF 88 15 52 23 130 81 79 VDD = 30V ID = 44A RG = 9.1Ω SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 IS = 44A TJ = 25°C Diode Forward Voltage 1 VGS = 0 Reverse Recovery Time IF = 44A TJ = 25°C Reverse Recovery Charge 1 di / dt ≤ 100A/µs VDD ≤ 50V Forward Turn–On Time IS ISM Min. nC ns 44 176 A 2.5 V 220 1.6 ns µC Negligible 5.0 13 nH 1.0 °C/W 0.12 30 Notes 1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/96