IRFE130 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont) RDS(on) 100V 7.44A Ω 0.207Ω 0.76 (0.030) 0.51 (0.020) FEATURES 7 6 1.39 (0.055) 1.15 (0.045) 5 4 0.33 (0.013) Rad. 0.08 (0.003) 3 1.65 (0.065) 1.40 (0.055) • SURFACE MOUNT 0.43 (0.017) 0.18 (0.007 Rad. • SMALL FOORPRINT • HERMETICALLY SEALED • DYNAMIC dv/dt RATING LCC4 • AVALANCHE ENERGY RATING MOSFET TRANSISTOR PINS GATE DRAIN SOURCE BASE COLLECTOR EMITTER 4,5 1,2,15,16,17,18 6,7,8,9,10,11,12,13 • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ID Continuous Drain Current (VGS = 10V , Tcase = 25°C) 7.4A ID Continuous Drain Current (VGS = 10V , Tcase = 100°C) 4.7A IDM Pulsed Drain Current 1 30A PD Power Dissipation @ Tcase = 25°C 22W ±20V Linear Derating Factor 0.17W/°C 2 EAS Single Pulse Avalanche Energy dv/dt Peak Diode Recovery 3 TJ , Tstg Operating and Storage Temperature Range 75mJ 5.5V/ns -55 to +150°C Surface Temperature ( for 5 sec). 300°C Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) @ VDD = 50V , L ≥ 570µH , RG = 25Ω , Peak IL = 14A , Starting TJ = 25°C 3) @ ISD ≤ 14A , di/dt ≤ 140A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 7.5Ω Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk 10/98 IRFE130 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ Breakdown Voltage Static Drain – Source On–State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance 1 IDSS Zero Gate Voltage Drain Current IGSS IGSS Forward Gate – Source Leakage Reverse Gate – Source Leakage Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Test Conditions VGS = 0 ID = 1mA Reference to 25°C ID = 1mA VGS = 10V ID = 4.7A VGS = 10V ID = 7.4A VDS = VGS ID = 250mA VDS ≥ 15V IDS = 4.7A VGS = 0 VDS = 0.8BVDSS TJ = 125°C VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 7.4A VDS = 0.5BVDSS trr Qrr ton LD LS PACKAGE CHARACTERISTICS Internal Drain Inductance (measured from 6mm down drain lead to centre of die) Internal Source Inductance (from 6mm down source lead to source bond pad) RθJC RθJPC THERMAL CHARACTERISTICS Thermal Resistance Junction – Case Thermal Resistance Junction – PC Board VSD Typ. Max. Unit V 100 V / °C 0.10 0.18 0.207 4 2 3 25 250 100 –100 650 240 44 12.8 1.0 3.8 Ω V S (É) µA nA pF 28.5 6.3 16.6 30 75 40 45 VDD = 50V ID = 7.4A RG = 7.5Ω SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 IS = 7.4A TJ = 25°C Diode Forward Voltage 1 VGS = 0 Reverse Recovery Time IF = 7.4A TJ = 25°C Reverse Recovery Charge 1 di / dt ≤ 100A/µs VDD ≤ 50V Forward Turn–On Time IS ISM Min. nC ns 7.4 30 A 1.5 V 300 3.0 ns µC Negligible 1.8 4.3 nH 5.8 19 °C/W Notes 1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk 10/98