SEME-LAB IRFE130

IRFE130
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
9.14 (0.360)
8.64 (0.340)
1.27 (0.050)
1.07 (0.040)
≈ 2.16 (0.085)
12 13 14 15 16
1.39 (0.055)
1.02 (0.040)
7.62 (0.300)
7.12 (0.280)
11
17
10
18
9
1
8
2
VDSS
ID(cont)
RDS(on)
100V
7.44A
Ω
0.207Ω
0.76 (0.030)
0.51 (0.020)
FEATURES
7
6
1.39 (0.055)
1.15 (0.045)
5
4
0.33 (0.013)
Rad.
0.08 (0.003)
3
1.65 (0.065)
1.40 (0.055)
• SURFACE MOUNT
0.43 (0.017)
0.18 (0.007 Rad.
• SMALL FOORPRINT
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
LCC4
• AVALANCHE ENERGY RATING
MOSFET
TRANSISTOR
PINS
GATE
DRAIN
SOURCE
BASE
COLLECTOR
EMITTER
4,5
1,2,15,16,17,18
6,7,8,9,10,11,12,13
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
Gate – Source Voltage
ID
Continuous Drain Current
(VGS = 10V , Tcase = 25°C)
7.4A
ID
Continuous Drain Current
(VGS = 10V , Tcase = 100°C)
4.7A
IDM
Pulsed Drain Current 1
30A
PD
Power Dissipation @ Tcase = 25°C
22W
±20V
Linear Derating Factor
0.17W/°C
2
EAS
Single Pulse Avalanche Energy
dv/dt
Peak Diode Recovery 3
TJ , Tstg
Operating and Storage Temperature Range
75mJ
5.5V/ns
-55 to +150°C
Surface Temperature ( for 5 sec).
300°C
Notes
1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
2) @ VDD = 50V , L ≥ 570µH , RG = 25Ω , Peak IL = 14A , Starting TJ = 25°C
3) @ ISD ≤ 14A , di/dt ≤ 140A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 7.5Ω
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected]
Website http://www.semelab.co.uk
10/98
IRFE130
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
∆BVDSS Temperature Coefficient of
∆TJ
Breakdown Voltage
Static Drain – Source On–State
RDS(on)
Resistance 1
VGS(th) Gate Threshold Voltage
gfs
Forward Transconductance 1
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Test Conditions
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 4.7A
VGS = 10V
ID = 7.4A
VDS = VGS
ID = 250mA
VDS ≥ 15V
IDS = 4.7A
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 7.4A
VDS = 0.5BVDSS
trr
Qrr
ton
LD
LS
PACKAGE CHARACTERISTICS
Internal Drain Inductance (measured from 6mm down drain lead to centre of die)
Internal Source Inductance (from 6mm down source lead to source bond pad)
RθJC
RθJPC
THERMAL CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Junction – PC Board
VSD
Typ.
Max.
Unit
V
100
V / °C
0.10
0.18
0.207
4
2
3
25
250
100
–100
650
240
44
12.8
1.0
3.8
Ω
V
S (É)
µA
nA
pF
28.5
6.3
16.6
30
75
40
45
VDD = 50V
ID = 7.4A
RG = 7.5Ω
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current 2
IS = 7.4A
TJ = 25°C
Diode Forward Voltage 1
VGS = 0
Reverse Recovery Time
IF = 7.4A
TJ = 25°C
Reverse Recovery Charge 1
di / dt ≤ 100A/µs VDD ≤ 50V
Forward Turn–On Time
IS
ISM
Min.
nC
ns
7.4
30
A
1.5
V
300
3.0
ns
µC
Negligible
1.8
4.3
nH
5.8
19
°C/W
Notes
1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected]
Website http://www.semelab.co.uk
10/98