SEME IRF150SMD LAB MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 2 100V 19A 0.070W FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • HIGH PACKING DENSITIES SMD1 PACKAGE Pad 1 – Gate Pad 2 – Drain Pad 3 – Source Note: IRFNxxx also available with pins 1 and 3 reversed. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current (VGS = 0 , Tcase = 25°C) 27A ID Continuous Drain Current (VGS = 0 , Tcase = 100°C) 19A IDM Pulsed Drain Current 1 108A PD Power Dissipation @ Tcase = 25°C 100W Linear Derating Factor 0.8W/°C 2 EAS Single Pulse Avalanche Energy dv/dt Peak Diode Recovery 3 TJ , Tstg Operating and Storage Temperature Range TL Package Mounting Surface Temperature (for 5 sec) RqJC RqJ–PCB Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical) 150mJ 5.5V/ns –55 to 150°C 300°C 1.25°C/W 3°C/W Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) @ VDD = 25V , L ³ 0.3mH , RG = 25W , Peak IL = 27A , Starting TJ = 25°C 3) @ ISD £ 27A , di/dt £ 70A/ms , VDD £ BVDSS , TJ £ 150°C , SUGGESTED RG = 2.35W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/00 SEME IRF150SMD LAB ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) ID = 1mA VGS(th) Gate Threshold Voltage 1 Max. V / °C VGS = 10V ID = 19A 0.070 VGS = 10V ID = 27A 0.081 VDS = VGS ID = 250mA 2 VDS ³ 15V IDS = 19A 9 VGS = 0 V (W) S(W VDS = 0.8BVDSS 25 TJ = 125°C 250 mA Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V –100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 3700 Coss Output Capacitance VDS = 25V 1100 Crss Reverse Transfer Capacitance f = 1MHz 200 Qg Total Gate Charge 1 Qgs Gate – Source Charge 1 ID = 27A 125 ID = 27A 8 22 VDS = 0.5BVDSS 15 65 Qgd Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current nC nC 35 VDD = 50V 190 ID = 27A 170 RG = 2.35W ns 130 27 2 ISM Pulse Source Current VSD Diode Forward Voltage trr Reverse Recovery Time IF = 27A Qrr Reverse Recovery Charge di / dt £ 100A/ms VDD £ 50V ton Forward Turn–On Time LD PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) 0.8 LS Internal Source Inductance (from centre of source pad to end of source bond wire) 2.8 108 IS = 27A nA pF 50 VDS = 0.5BVDSS 1 W 4 gfs VGS = 10V Unit V 0.13 ID = 1mA 1 Typ. 100 Reference to 25°C Static Drain – Source On–State Resistance VGS = 0 Min. TJ = 25°C VGS = 0 TJ = 25°C A 1.8 V 500 ns 2.9 mC Negligible nH Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/00