Si7913DN Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.037 @ VGS = −4.5 V −7.4 0.048 @ VGS = −2.5 V −6.5 0.066 @ VGS = −1.8 V −5.5 PowerPAK 1212-8 1 APPLICATIONS 3.30 mm G1 2 RoHS COMPLIANT D Portable − PA Switch − Battery Switch − Load Switch S S S1 3.30 mm D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package G G S2 3 G2 4 D1 8 D1 7 D D P-Channel MOSFET P-Channel MOSFET D2 6 D2 Ordering Information: Si7913DN-T1—E3 (Lead (Pb)-Free) 5 Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS −20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current ID IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V −5.0 −7.4 −5.3 −3.6 IDM continuous Source Current (Diode Conduction)a −20 −2.3 A −1.1 2.8 1.3 1.5 0.85 TJ, Tstg Unit −55 to 150 Soldering Recommendations (Peak Temperature)b,c W _C 260 THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 35 44 75 94 4 5 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72615 S-51129—Rev. B, 13-Jun-05 www.vishay.com 1 Si7913DN Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −0.40 Typ Max Unit −1.0 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Voltagea VDS = −20 V, VGS = 0 V −1 VDS = −20 V, VGS = 0 V, TJ = 85_C −5 VDS v −5 V, VGS = −4.5 V mA −20 A VGS = −4.5 V, ID = −7.4 A 0.029 0.037 VGS = −2.5 V, ID = −6.5 A 0.038 0.048 VGS = −1.8 V, ID = −1.5 A 0.051 0.066 gfs VDS = −6 V, ID = −7.4 A 20 VSD IS = −2.3 A, VGS = 0 V −0.74 −1.2 15.3 24 rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "8 V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance VDS = −10 V, VGS = −4.5 V, ID = −7.4 A f = 1 MHz 7 td(on) Rise Time tr Turn-Off Delay Time VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 3.9 Rg Turn-On Delay Time 2.0 IF = −2.3 A, di/dt = 100 A/ms W 20 30 70 110 72 110 150 225 25 50 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 Transfer Characteristics 20 VGS = 5 thru 2.5 V 2V 16 I D − Drain Current (A) I D − Drain Current (A) 16 12 8 1.5 V 4 12 8 TC = 125_C 4 25_C 1V −55_C 0 0 1 2 3 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 4 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS − Gate-to-Source Voltage (V) Document Number: 72615 S-51129—Rev. B, 13-Jun-05 Si7913DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 Capacitance 2100 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 1800 0.08 VGS = 1.8 V 0.06 VGS = 2.5 V 0.04 VGS = 4.5 V 0.02 1500 Ciss 1200 900 600 Coss 300 Crss 0.00 0 0 4 8 12 16 20 0 4 Gate Charge rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 3 2 1 20 VGS = 4.5 V ID = 7.4 A 1.4 1.2 1.0 0.8 0 0 4 8 12 16 0.6 −50 20 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) − On-Resistance ( W ) 10 TJ = 150_C TJ = 25_C 1 0.0 25 TJ − Junction Temperature (_C) 20 I S − Source Current (A) 16 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 7.4 A 4 12 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) 5 8 0.08 ID = 7.4 A 0.06 0.04 ID = 1.5 A 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72615 S-51129—Rev. B, 13-Jun-05 1.2 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7913DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 50 ID = 250 mA 40 0.2 30 Power (W) V GS(th) Variance (V) 0.3 0.1 20 0.0 10 −0.1 −0.2 −50 −25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ − Temperature (_C) 1 10 100 600 Time (sec) 100 Safe Operating Area, Junction-To-Ambient Limited by rDS(on) IDM Limited I D − Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72615 S-51129—Rev. B, 13-Jun-05 Si7913DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72615. Document Number: 72615 S-51129—Rev. B, 13-Jun-05 www.vishay.com 5