VISHAY SI7913DN-T1-E3

Si7913DN
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
−20
rDS(on) (W)
ID (A)
0.037 @ VGS = −4.5 V
−7.4
0.048 @ VGS = −2.5 V
−6.5
0.066 @ VGS = −1.8 V
−5.5
PowerPAK 1212-8
1
APPLICATIONS
3.30 mm
G1
2
RoHS
COMPLIANT
D Portable
− PA Switch
− Battery Switch
− Load Switch
S
S
S1
3.30 mm
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package
G
G
S2
3
G2
4
D1
8
D1
7
D
D
P-Channel MOSFET
P-Channel MOSFET
D2
6
D2
Ordering Information: Si7913DN-T1—E3 (Lead (Pb)-Free)
5
Bottom View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
−20
Gate-Source Voltage
VGS
"8
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 85_C
Pulsed Drain Current
ID
IS
TA = 25_C
Maximum Power Dissipationa
TA = 85_C
Operating Junction and Storage Temperature Range
PD
V
−5.0
−7.4
−5.3
−3.6
IDM
continuous Source Current (Diode Conduction)a
−20
−2.3
A
−1.1
2.8
1.3
1.5
0.85
TJ, Tstg
Unit
−55 to 150
Soldering Recommendations (Peak Temperature)b,c
W
_C
260
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Case
Symbol
t v 10 sec
Steady State
Steady State
RthJA
RthJC
Typical
Maximum
35
44
75
94
4
5
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72615
S-51129—Rev. B, 13-Jun-05
www.vishay.com
1
Si7913DN
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = −250 mA
−0.40
Typ
Max
Unit
−1.0
V
"100
nA
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Voltagea
VDS = −20 V, VGS = 0 V
−1
VDS = −20 V, VGS = 0 V, TJ = 85_C
−5
VDS v −5 V, VGS = −4.5 V
mA
−20
A
VGS = −4.5 V, ID = −7.4 A
0.029
0.037
VGS = −2.5 V, ID = −6.5 A
0.038
0.048
VGS = −1.8 V, ID = −1.5 A
0.051
0.066
gfs
VDS = −6 V, ID = −7.4 A
20
VSD
IS = −2.3 A, VGS = 0 V
−0.74
−1.2
15.3
24
rDS(on)
Forward Transconductancea
Diode Forward
VDS = 0 V, VGS = "8 V
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
VDS = −10 V, VGS = −4.5 V, ID = −7.4 A
f = 1 MHz
7
td(on)
Rise Time
tr
Turn-Off Delay Time
VDD = −10 V, RL = 10 W
ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
3.9
Rg
Turn-On Delay Time
2.0
IF = −2.3 A, di/dt = 100 A/ms
W
20
30
70
110
72
110
150
225
25
50
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
Transfer Characteristics
20
VGS = 5 thru 2.5 V
2V
16
I D − Drain Current (A)
I D − Drain Current (A)
16
12
8
1.5 V
4
12
8
TC = 125_C
4
25_C
1V
−55_C
0
0
1
2
3
VDS − Drain-to-Source Voltage (V)
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2
4
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS − Gate-to-Source Voltage (V)
Document Number: 72615
S-51129—Rev. B, 13-Jun-05
Si7913DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
Capacitance
2100
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
1800
0.08
VGS = 1.8 V
0.06
VGS = 2.5 V
0.04
VGS = 4.5 V
0.02
1500
Ciss
1200
900
600
Coss
300
Crss
0.00
0
0
4
8
12
16
20
0
4
Gate Charge
rDS(on) − On-Resiistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
3
2
1
20
VGS = 4.5 V
ID = 7.4 A
1.4
1.2
1.0
0.8
0
0
4
8
12
16
0.6
−50
20
−25
0
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.10
r DS(on) − On-Resistance ( W )
10
TJ = 150_C
TJ = 25_C
1
0.0
25
TJ − Junction Temperature (_C)
20
I S − Source Current (A)
16
On-Resistance vs. Junction Temperature
1.6
VDS = 10 V
ID = 7.4 A
4
12
VDS − Drain-to-Source Voltage (V)
ID − Drain Current (A)
5
8
0.08
ID = 7.4 A
0.06
0.04
ID = 1.5 A
0.02
0.00
0.2
0.4
0.6
0.8
1.0
VSD − Source-to-Drain Voltage (V)
Document Number: 72615
S-51129—Rev. B, 13-Jun-05
1.2
0
1
2
3
4
5
VGS − Gate-to-Source Voltage (V)
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Si7913DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.4
50
ID = 250 mA
40
0.2
30
Power (W)
V GS(th) Variance (V)
0.3
0.1
20
0.0
10
−0.1
−0.2
−50
−25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
TJ − Temperature (_C)
1
10
100
600
Time (sec)
100
Safe Operating Area, Junction-To-Ambient
Limited by rDS(on)
IDM Limited
I D − Drain Current (A)
10
P(t) = 0.001
1
ID(on)
Limited
P(t) = 0.01
P(t) = 0.1
P(t) = 1
0.1
TA = 25_C
Single Pulse
P(t) = 10
dc
BVDSS Limited
0.01
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 65_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
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4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 72615
S-51129—Rev. B, 13-Jun-05
Si7913DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
Square Wave Pulse Duration (sec)
10−1
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72615.
Document Number: 72615
S-51129—Rev. B, 13-Jun-05
www.vishay.com
5