VISHAY SI1304DL

Si1304DL
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
25
rDS(on) (W)
ID (A)
0.350 @ VGS = 4.5 V
0.75
0.450 @ VGS = 2.5 V
0.66
Qg (Typ)
13
1.3
SOT-323
SC-70 (3-LEADS)
G
1
3
S
D
KB
XX
YY
Marking Code
Lot Traceability
and Date Code
2
Part # Code
Top View
Ordering Information: Si1304DL-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
25
Gate-Source Voltage
VGS
"8
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current
ID
IS
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
PD
V
0.70
0.75
0.60
0.56
IDM
Continuous Diode Current (Diode Conduction)a
3.0
0.28
0.24
0.33
0.29
0.21
0.19
TJ, Tstg
Unit
−55 to 150
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Symbol
t v 5 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
315
375
380
450
285
340
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71315
S-41774—Rev. C, 04-Oct-04
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Si1304DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = 250 mA
0.6
Typ
Max
Unit
1.3
V
"100
nA
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain Source On-State
Drain-Source
On State Resistancea
Voltagea
VDS = 25 V, VGS = 0 V
1
VDS = 25 V, VGS = 0 V, TJ = 70_C
5
VDS = 5 V, VGS = 4.5 V
mA
3.0
A
VGS = 4.5 V, ID = 0.75 A
0.280
0.350
VGS = 2.5 V, ID = 0.50 A
0.355
0.450
gfs
VDS = 15 V, ID = 0.75 A
1.5
VSD
IS = 0.24 A, VGS = 0 V
0.8
1.2
1.3
2.0
VDS = 15 V, VGS = 4.5 V, ID = 0.75 A
0.31
rDS(on)
DS( )
Forward Transconductancea
Diode Forward
VDS = 0 V, VGS = "8 V
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
11
20
tr
18
30
17
30
11
20
30
60
Rise Time
Turn-Off Delay Time
VDD = 15 V, RL = 20 W
ID ^ 0.75 A, VGEN = 4.5 V, Rg = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
0.5
IF = 0.24 A, di/dt = 100 A/ms
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
3.0
3.0
2.5
I D − Drain Current (A)
2.5
I D − Drain Current (A)
TC = −55_C
VGS = 5 thru 2.5 V
2.0
2V
1.5
1.0
0.5
1V
0
2
4
6
8
VDS − Drain-to-Source Voltage (V)
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2.0
125_C
1.5
1.0
0.5
1.5 V
0.0
25_C
10
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS − Gate-to-Source Voltage (V)
Document Number: 71315
S-41774—Rev. C, 04-Oct-04
Si1304DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
200
0.8
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
1.0
0.6
VGS = 2.5 V
0.4
VGS = 4.5 V
100
Ciss
Coss
50
0.2
0.0
0.0
150
Crss
0
0.5
1.0
1.5
2.0
2.5
0
3.0
5
ID − Drain Current (A)
Gate Charge
20
25
On-Resistance vs. Junction Temperature
1.8
VDS = 15 V
ID = 0.75 A
VGS = 4.5 V
ID = 0.75 A
1.6
6
rDS(on) − On-Resiistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
15
VDS − Drain-to-Source Voltage (V)
8
4
2
1.4
1.2
1.0
0.8
0
0.0
0.5
1.0
1.5
2.0
0.6
−50
2.5
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
25
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
r DS(on) − On-Resistance ( W )
TJ = 150_C
TJ = 25_C
0.01
0.001
0.0
0
0.8
1
0.1
−25
TJ − Junction Temperature (_C)
10
I S − Source Current (A)
10
0.6
ID = 0.75 A
0.4
0.2
0.0
0.2
0.4
0.6
0.8
1.0
VSD − Source-to-Drain Voltage (V)
Document Number: 71315
S-41774—Rev. C, 04-Oct-04
1.2
0
2
4
6
8
VGS − Gate-to-Source Voltage (V)
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Si1304DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.2
20
16
ID = 250 mA
−0.0
Power (W)
V GS(th) Variance (V)
0.1
−0.1
12
TA = 25_C
8
−0.2
4
−0.3
−0.4
−50
−25
0
25
50
75
100
125
150
0
10−3
10−2
10−1
TJ − Temperature (_C)
Normalized Effective Transient
Thermal Impedance
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 360_C/W
0.02
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Time (sec)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology
and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?71315.
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Document Number: 71315
S-41774—Rev. C, 04-Oct-04