Si8415DB New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.037 @ VGS = −4.5 V −7.3 0.046 @ VGS = −2.5 V −6.6 0.060 @ VGS = −1.8 V −5.8 Qg (Typ) 19 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area D Ultra-Low On-Resistance APPLICATIONS D Load Switch, Charger Switch, and PA Switch for Portable Devices S MICRO FOOT Bump Side View 3 Backside View G 2 D S 4 8415 xxx D Device Marking: 8415 xxx = Date/Lot Traceability Code D G Ordering Information: Si8415DB-T1—E1 1 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS −12 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range Package Reflow Conditionsb PD V −7.3 −5.3 −5.9 −4.3 IDM −25 −2.5 −1.3 2.77 1.47 1.77 0.94 TJ, Tstg Unit A W −55 to 150 VPR 215 IR/Convection 220 _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 35 45 72 85 16 20 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73210 S-50037—Rev. A, 17-Jan-05 www.vishay.com 1 Si8415DB New Product Vishay Siliconix b. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering. SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −0.4 Typ Max Unit −1 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source Drain Source On On-State State Resistancea Voltagea VDS = −12 V, VGS = 0 V −1 VDS = −12 V, VGS = 0 V, TJ = 70_C −5 VDS v −5 V, VGS = −4.5 V mA −5 A VGS = −4.5 V, ID = −1 A 0.031 0.037 VGS = −2.5 V, ID = −1 A 0.038 0.046 VGS = −1.8 V, ID = −1 A 0.050 0.060 gfs VDS = −10 V, ID = −1 A 11 VSD IS = −1 A, VGS = 0 V −0.8 −1.1 19 30 VDS = −6 V,, VGS = −4.5 V,, ID = −1 A 1.9 rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "8 V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time f = 1 MHz 19 td(on) Rise Time VDD = −6 V, RL = 6 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr W 15 tr Turn-Off Delay Time nC 4.8 IF = −1 A, di/dt = 100 A/ms 25 32 50 180 270 115 175 80 120 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 25 25 VGS = 5 thru 2.5 V 2V 20 I D − Drain Current (A) I D − Drain Current (A) 20 15 10 1.5 V 5 15 10 TC = 125_C 5 25_C −55_C 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS − Gate-to-Source Voltage (V) Document Number: 73210 S-50037—Rev. A, 17-Jan-05 Si8415DB New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 2500 0.10 2000 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.12 0.08 VGS = 1.8 V 0.06 VGS = 2.5 V 0.04 1000 Coss 500 VGS = 4.5 V 0.02 Ciss 1500 Crss 0.00 0 0 5 10 15 20 25 0 2 Gate Charge rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 10 12 VGS = 4.5 V ID = 1 A 1.3 3 2 1 1.2 1.1 1.0 0.9 0 0 5 10 15 20 0.8 −50 25 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) − On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ − Junction Temperature (_C) 30 I S − Source Current (A) 8 On-Resistance vs. Junction Temperature 1.4 VDS = 6 V ID = 1 A 4 6 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) 5 4 0.08 0.06 ID = 1 A 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD − Source-to-Drain Voltage (V) Document Number: 73210 S-50037—Rev. A, 17-Jan-05 1.4 1.6 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si8415DB New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.4 80 ID = 250 mA 0.3 0.2 Power (W) V GS(th) Variance (V) 60 0.1 40 0.0 20 −0.1 −0.2 −50 −25 0 25 50 75 100 125 0 150 0.001 0.01 0.1 TJ − Temperature (_C) 10 1 100 600 Time (sec) Safe Operating Area 100 IDM Limited *rDS(on) Limited I D − Drain Current (A) 10 P(t) = 0.001 1 0.1 P(t) = 0.01 ID(on) Limited TA = 25_C Single Pulse P(t) = 0.1 P(t) = 1 P(t) = 10 dc BVDSS Limited 0.01 0.1 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 72_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 73210 S-50037—Rev. A, 17-Jan-05 Si8415DB New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 73210 S-50037—Rev. A, 17-Jan-05 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5 Si8415DB New Product Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4-BUMP (2 X 2, 0.8-mm PITCH) 4 O 0.30 X 0.31 Note 3 Solder Mask O X 0.40 e A A2 Silicon A1 Bump Note 2 b Diamerter e S Recommended Land E e 8415 XXX e S D Mark on Backside of Die NOTES (Unless Otherwise Specified): 1. Laser mark on the silicon die back, coated with a thin metal. 2. Bumps are Eutectic solder 63/57 Sn/Pb. 3. Non-solder mask defined copper landing pad. 4. The flat side of wafers is oriented at the bottom. MILLIMETERS* INCHES Dim Min Max Min Max A 0.600 0.650 0.0236 0.0256 A1 0.260 0.290 0.0102 0.0114 A2 0.340 0.360 0.0134 0.0142 b 0.370 0.410 0.0146 0.0161 D 1.520 1.600 0.0598 0.0630 E 1.520 1.600 0.0598 0.0630 e 0.750 0.850 0.0295 0.0335 S 0.370 0.380 0.0146 0.0150 * Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73210. www.vishay.com 6 Document Number: 73210 S-50037—Rev. A, 17-Jan-05