Si3493DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.027 @ VGS = −4.5 V −7 0.035 @ VGS = −2.5 V −6.2 0.048 @ VGS = −1.8 V −5.2 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra-Low On-Resistance Qg (Typ) APPLICATIONS D Load Switch D PA Switch D Battery Switch 21 TSOP-6 Top View 1 6 2 5 3 4 (4) S (3) G 3 mm (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET Ordering Information: Si3493DV-T1 Si3493DV-T1—E3 (Lead (Pb)-Free) Marking Code: 93xxx ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS −20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current ID Continuous Diode Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V −7 −5.3 −3.6 −3.9 IDM −20 −1.7 −0.9 2.0 1.1 1.0 0.6 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 45 62.5 90 110 25 30 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71936 S-41796—Rev. C, 04-Oct-04 www.vishay.com 1 Si3493DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −0.40 Typ Max Unit −1 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −7 A 0.022 0.027 rDS(on) ( ) VGS = −2.5 V, ID = −6.2 A 0.029 0.035 VGS = −1.8 V, ID = −3 A 0.039 0.048 Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VDS = 0 V, VGS = "8 V VDS = −20 V, VGS = 0 V −1 VDS = −20 V, VGS = 0 V, TJ = 85_C −5 −20 mA A gfs VDS = −5 V, ID = −7 A 25 VSD IS = −1.7 A, VGS = 0 V −0.7 −1.2 21 32 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = −10 V, VGS = −4.5 V, ID = −7 A Gate-Drain Charge Qgd 6 Turn-On Delay Time td(on) 20 Rise Time tr Turn-Off Delay Time VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 2.6 IF = −1.7 A, di/dt = 100 A/ms 30 40 60 125 190 85 130 64 90 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 5 thru 2 V 16 I D − Drain Current (A) I D − Drain Current (A) 16 12 1.5 V 8 4 12 8 TC = 125_C 4 25_C 1V 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.4 0.8 −55_C 1.2 1.6 2.0 VGS − Gate-to-Source Voltage (V) Document Number: 71936 S-41796—Rev. C, 04-Oct-04 Si3493DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 3000 2500 0.08 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.10 0.06 VGS = 1.8 V 0.04 VGS = 2.5 V 0.02 Ciss 2000 1500 1000 Coss 500 VGS = 4.5 V Crss 0.00 0 0 4 8 12 16 0 20 4 ID − Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 7 A VGS = 4.5 V ID = 7 A 4 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 12 VDS − Drain-to-Source Voltage (V) 5 3 2 1 1.2 1.0 0.8 0 0 4 8 12 16 20 0.6 −50 24 −25 0 Qg − Total Gate Charge (nC) 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.10 10 0.08 r DS(on) − On-Resistance ( W ) 20 TJ = 150_C TJ = 25_C 1 0.0 25 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage I S − Source Current (A) 8 ID = 7 A 0.06 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 71936 S-41796—Rev. C, 04-Oct-04 1.2 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si3493DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 40 32 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) 0.3 0.1 24 TA = 25_C 16 0.0 8 −0.1 −0.2 −50 −25 0 25 50 75 100 125 0 10−2 150 10−1 TJ − Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area 100 * rDS(on) Limited IDM Limited I D − Drain Current (A) 10 P(t) = 0.001 1 P(t) = 0.1 0.1 0.01 0.1 TC = 25_C Single Pulse P(t) = 1 P(t) = 10 dc BVDSS Limited 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance P(t) = 0.01 ID(on) Limited 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 360_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71936 S-41796—Rev. C, 04-Oct-04 Si3493DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71936. Document Number: 71936 S-41796—Rev. C, 04-Oct-04 www.vishay.com 5