BAS281 / 282 / 283 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Very low switching time 9612009 Applications General purpose and switching Schottky barrier diode HF-Detector Protection circuit Diode for low currents with a low supply voltage Small battery charger Power supplies DC / DC converter for notebooks Mechanical Data Case:QuadroMELF Glass Case (SOD-80) Weight: approx. 33.7 mg Cathode Band Color: Black Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part Type differentiation Ordering code Remarks BAS281 VR = 40 V BAS281-GS18 or BAS281-GS08 Tape and Reel BAS282 VR = 50 V BAS282-GS18 or BAS282-GS08 Tape and Reel BAS283 VR = 60 V BAS283-GS18 or BAS283-GS08 Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Document Number 85500 Rev. 1.6, 03-Mar-04 tp = 1 s Part Symbol Value Unit BAS281 VR 40 V BAS282 VR 50 V BAS283 VR 60 V IFSM 500 mA IFRM 150 mA IF 30 mA www.vishay.com 1 BAS281 / 282 / 283 VISHAY Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Junction ambient Symbol Value Unit RthJA 320 K/W Tj 125 °C Tstg - 65 to + 150 °C on PC board 50 mm x 50 mm x 1.6 mm Junction temperature Storage temperature range Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Max Unit VF 330 mV IF = 1 mA VF 410 mV IF = 15 mA VF 1 V Reverse current VR = VRmax IR 200 nA Diode capacitance VR = 1 V, f = 1 MHz CD 1.6 pF IF = 0.1 mA Forward voltage Symbol Min Typ. 14 12 R thJA = 540 K/W 10 8 PR - Limit @ 100 % VR 6 4 PR - Limit @ 80 % VR 2 0 25 15794 1000 V R = 60 V I R - Reverse Currentı ( µA ) PR - Reverse Power Dissipation ( mW ) Typical Characteristics (Tamb = 25 °C unless otherwise specified) 50 75 100 125 Fig. 1 Max. Reverse Power Dissipation vs. Junction Temperature www.vishay.com 2 100 10 1 0.1 25 150 Tj - Junction Temperature ( ° C ) V R = VRRM 15795 50 75 100 125 150 Tj - Junction Temperature ( ° C ) Fig. 2 Reverse Current vs. Junction Temperature Document Number 85500 Rev. 1.6, 03-Mar-04 BAS281 / 282 / 283 VISHAY Vishay Semiconductors 2.0 CD - Diode Capacitance ( pF ) I F - Forward Current ( A ) 1000 100 Tj = 150 °C 10 Tj = 25 °C 1 0.1 f = 1 MHz 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0 15796 0.5 1 1.5 0 0.1 2.0 V F - Forward Voltage ( V ) 1 100 V R - Reverse Voltage ( V ) 15797 Fig. 3 Forward Current vs. Forward Voltage 10 Fig. 4 Diode Capacitance vs. Reverse Voltage Package Dimensions in mm (Inches) 1.5 ± 0.1 (0.06 ± 0.004) ss la G 1. 7 (0 .0 7) Cathode indification Glass > R 3 (R 0.12) 0.47 max. (0.02) 3.5 ± 0.2 (0.14 ± 0.008) Mounting Pad Layout 2.50 (0.098) max technical drawings according to DIN specifications Glass case Quadro Melf / SOD 80 JEDEC DO 213 AA 5 (0.197) ref 2 (0.079) min 1.25 (0.049) min 96 12071 Document Number 85500 Rev. 1.6, 03-Mar-04 www.vishay.com 3 BAS281 / 282 / 283 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85500 Rev. 1.6, 03-Mar-04