Si4473DY Vishay Siliconix P-Channel 14-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −14 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.011 @ VGS = −4.5 V −13 APPLICATION 0.016 @ VGS = −2.5 V −11 D Battery Switch for Portable Equipment SO-8 S S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4473DY Si4473DY-T1 (with Tape and Reel) Si4473DY—E3 (Lead (Pb)-Free) Si4473DY-T1—E3 (Lead (Pb)-Free with Tape and Reel) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS −14 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V −13 −9 −10 −7 IDM −50 −2.7 −1.36 3.0 1.5 1.9 0.95 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 33 42 70 84 16 21 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71613 S-50154—Rev. C, 31-Jan-05 www.vishay.com 1 Si4473DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −0.6 Typ Max Unit 1.5 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea VDS = 0 V, VGS = "12 V Diode Forward Voltagea −1 VDS = −14 V, VGS = 0 V, TJ = 70_C −10 VDS = −5 V, VGS = −4.5 V rDS(on) DS( ) Forward Transconductancea VDS = −14 V, VGS = 0 V mA −30 A VGS = −4.5 V, ID = −13 A 0.0088 0.011 VGS = −2.5 V, ID = −11 A 0.013 0.016 gfs VDS = −17 V, ID = −13 A 50 VSD IS = −2.7 A, VGS = 0 V −0.65 −1.1 46 70 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time VDS = −10 V, VGS = −4.5 V, ID = −13 A 9 13.2 1.5 td(on) Rise Time tr Turn-Off Delay Time VDD = −15 15 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC IF = −2.1 A, di/dt = 100 A/ms 3.2 5.3 35 55 45 70 160 240 140 210 55 80 W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 5 thru 2.5 V TC = −55_C 40 30 I D − Drain Current (A) I D − Drain Current (A) 40 2V 20 10 1.5 V 0 0 2 4 6 8 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 10 25_C 125_C 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS − Gate-to-Source Voltage (V) Document Number: 71613 S-50154—Rev. C, 31-Jan-05 Si4473DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 8000 0.024 6400 0.018 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) On-Resistance vs. Drain Current 0.030 VGS = 2.5 V 0.012 VGS = 4.5 V Ciss 4800 3200 Coss 0.006 1600 Crss 0.000 0 0 10 20 30 40 50 0 4 ID − Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 13 A VGS = 4.5 V ID = 13 A 8 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 12 VDS − Drain-to-Source Voltage (V) 10 6 4 2 1.2 1.0 0.8 0 0 20 40 60 80 0.6 −50 100 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 0 25 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.05 r DS(on) − On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 −25 TJ − Junction Temperature (_C) 50 I S − Source Current (A) 8 0.04 ID = 13 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 71613 S-50154—Rev. C, 31-Jan-05 1.2 0 2 4 6 8 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4473DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power, Junction-to-Ambient 200 0.4 160 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) Threshold Voltage 0.6 0.0 120 80 40 −0.2 −0.4 −50 −25 0 25 50 75 100 125 150 0 0.001 0.01 TJ − Temperature (_C) Normalized Effective Transient Thermal Impedance 1 10 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 0.1 Time (sec) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71613. www.vishay.com 4 Document Number: 71613 S-50154—Rev. C, 31-Jan-05