Si7336DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D Qg Optimized D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.00325 @ VGS = 10 V 30 0.0042 @ VGS = 4.5 V 27 Qg (Typ) 36 APPLICATIONS D Low-Side DC/DC Conversion − Notebook − Server − Workstation D Synchronous Rectifier, POL PowerPAK SO-8 S 6.15 mm 1 2 5.15 mm S 3 D S 4 G D 8 7 D 6 G D 5 D S Bottom View N-Channel MOSFET Ordering Information: Si7336DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) IS L = 1.0 mH TA = 25_C Maximum Power Dissipationa TA = 70_C 18 25 15 Operating Junction and Storage Temperature Range 70 A 4.5 IAS PD V 30 IDM Continuous Source Current (Diode Conduction)a Avalanche Current ID Unit 1.8 50 5.4 1.9 3.4 1.2 TJ, Tstg −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 18 23 50 65 1.0 1.5 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72415 S-41795—Rev. C, 04-Oct-04 www.vishay.com 1 Si7336DP Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS Typ Max Unit 3.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea 30 VDS w 5 V, VGS = 10 V rDS(on) mA A VGS = 10 V, ID = 25 A 0.0026 0.00325 VGS = 4.5 V, ID = 19 A 0.0033 0.0042 gfs VDS = 15 V, ID = 25 A 110 VSD IS = 2.9 A, VGS = 0 V 0.72 W S 1.1 V Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance 5600 VDS = 15 V,, VGS = 0 V,, f = 1 MHz 860 36 VDS = 15 V,, VGS = 4.5 V,, ID = 20 A 0.8 tr Turn-Off Delay Time VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 10 td(on) Rise Time 50 18 Rg Turn-On Delay Time pF p 415 IF = 2.9 A, di/dt = 100 A/ms 1.3 2.0 24 35 16 25 90 140 32 50 45 70 W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 4 V 50 40 I D − Drain Current (A) I D − Drain Current (A) 50 30 20 10 40 30 20 TC = 125_C 10 25_C 3V −55_C 0 0 2 4 6 8 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 72415 S-41795—Rev. C, 04-Oct-04 Si7336DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.005 Capacitance 7000 Ciss VGS = 4.5 V C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 6000 0.004 0.003 VGS = 10 V 0.002 5000 4000 3000 2000 0.001 0.000 0 0 10 20 30 40 50 0 6 ID − Drain Current (A) 24 30 VGS = 10 V ID = 25 A rDS(on) − On-Resiistance (Normalized) 1.4 4 3 2 1.2 1.0 0.8 1 0 0 5 10 15 20 25 30 35 40 0.6 −50 45 −25 0 Source-Drain Diode Forward Voltage r DS(on) − On-Resistance ( W ) 10 TJ = 150_C TJ = 25_C 75 100 125 150 0.012 ID = 25 A 0.009 0.006 0.003 0.000 0.1 0.00 50 On-Resistance vs. Gate-to-Source Voltage 0.015 50 1 25 TJ − Junction Temperature (_C) Qg − Total Gate Charge (nC) I S − Source Current (A) 18 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 20 A 5 12 VDS − Drain-to-Source Voltage (V) Gate Charge 6 V GS − Gate-to-Source Voltage (V) Coss Crss 1000 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) Document Number: 72415 S-41795—Rev. C, 04-Oct-04 1.0 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7336DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 200 ID = 250 mA 160 −0.0 Power (W) V GS(th) Variance (V) 0.2 −0.2 −0.4 120 80 −0.6 40 −0.8 −1.0 −50 −25 0 25 50 75 100 125 0 0.001 150 0.01 TJ − Temperature (_C) 0.1 1 10 Time (sec) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on)* 1 ms 10 10 ms 100 ms 1 1s 0.1 10 s TC = 25_C Single Pulse dc 0.01 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 50_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72415 S-41795—Rev. C, 04-Oct-04 Si7336DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72415. Document Number: 72415 S-41795—Rev. C, 04-Oct-04 www.vishay.com 5