Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V - 4.9 0.070 @ VGS = - 2.5 V - 4.4 0.090 @ VGS = - 1.8 V - 4.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area APPLICATIONS D PA, Battery and Load Switch D Battery Charger Switch S MICRO FOOT Bump Side View 3 Backside View G 2 D S 8405 xxx D Device Marking: 8405 xxx = Date/Lot Traceability Code D G 4 1 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range Package Reflow Conditionsb PD V - 3.6 - 4.9 - 3.9 IDM - 2.8 - 10 - 2.5 - 1.3 2.77 1.47 1.77 0.94 TJ, Tstg Unit A W - 55 to 150 VPR 215 IR/Convection 220 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Foot (drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 35 45 72 85 16 20 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering. Document Number: 71814 S-20804—Rev. C, 01-Jul-02 www.vishay.com 1 Si8405DB Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit VGS(th) VDS = VGS, ID = - 250 mA - 0.45 - 0.7 - 0.95 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Voltagea VDS = - 12 V, VGS = 0 V -1 VDS = - 12 V, VGS = 0 V, TJ = 70_C -5 VDS v - 5 V, VGS = - 4.5 V mA -5 A VGS = - 4.5 V, ID = - 1 A 0.045 0.055 VGS = - 2.5 V, ID = - 1 A 0.055 0.070 VGS = - 1.8 V, ID = - 1 A 0.073 0.090 gfs VDS = - 10 V, ID = - 1 A 6 VSD IS = - 1 A, VGS = 0 V - 0.73 - 1.1 14 21 VDS = - 6 V, VGS = - 4.5 V, ID = - 1 A 1.7 rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "8 V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.5 Turn-On Delay Time td(on) 16 tr 32 50 120 180 80 120 46 70 Rise Time Turn-Off Delay Time VDD = - 6 V, RL = 6 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = - A, di/dt = 100 A/ms nC 25 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 Transfer Characteristics 10 VGS = 5 thru 2 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 6 1.5 V 4 2 6 4 TC = 125_C 2 25_C - 55_C 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 10 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VGS - Gate-to-Source Voltage (V) Document Number: 71814 S-20804—Rev. C, 01-Jul-02 Si8405DB Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.14 Capacitance 2000 1600 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.12 0.10 VGS = 1.8 V 0.08 VGS = 2.5 V 0.06 0.04 VGS = 4.5 V Ciss 1200 800 Coss Crss 400 0.02 0.00 0 0 2 4 6 0 8 2 Gate Charge r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 4 3 2 1 0 0 4 8 12 16 12 1.2 1.0 0.8 0.6 - 50 20 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.30 r DS(on) - On-Resistance ( W ) 10 I S - Source Current (A) 10 VGS = 4.5 V ID = 1 A 1.4 Qg - Total Gate Charge (nC) TJ = 150_C 1 TJ = 25_C 0.1 0.0 8 On-Resistance vs. Junction Temperature 1.6 VDS = 6 V ID = 1 A 5 6 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 6 4 0.24 ID = 1 A 0.18 0.12 0.06 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Document Number: 71814 S-20804—Rev. C, 01-Jul-02 1.2 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si8405DB Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.4 80 ID = 250 mA 0.3 0.2 Power (W) V GS(th) Variance (V) 60 0.1 40 0.0 20 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 TJ - Temperature (_C) 0.1 1 10 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 72_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71814 S-20804—Rev. C, 01-Jul-02 Si8405DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4−BUMP (2 X 2, 0.8−mm PITCH) 4 O 0.30 X 0.31 Note 3 Solder Mask O X 0.40 e A A2 Silicon A1 Bump Note 2 b Diamerter e S Recommended Land E e 8405 XXX e S D Mark on Backside of Die NOTES (Unless Otherwise Specified): 5. Laser mark on the silicon die back, coated with a thin metal. 6. Bumps are Eutectic solder 63/57 Sn/Pb. 7. Non-solder mask defined copper landing pad. 8. The flat side of wafers is oriented at the bottom. MILLIMETERS* INCHES Dim Min Max Min Max A 0.600 0.650 0.0236 0.0256 A1 0.260 0.290 0.0102 0.0114 A2 0.340 0.360 0.0134 0.0142 b 0.370 0.410 0.0146 0.0161 D 1.520 1.600 0.0598 0.0630 E 1.520 1.600 0.0598 0.0630 e 0.750 0.850 0.0295 0.0335 S 0.370 0.380 0.0146 0.0150 * Use millimeters as the primary measurement. Document Number: 71814 S-20804—Rev. C, 01-Jul-02 www.vishay.com 5