Order this document by MBD101/D SEMICONDUCTOR TECHNICAL DATA Designed primarily for UHF mixer applications but suitable also for use in detector and ultra–fast switching circuits. Supplied in an inexpensive plastic package for low–cost, high–volume consumer requirements. Also available in Surface Mount package. Motorola Preferred Devices • Low Noise Figure — 6.0 dB Typ @ 1.0 GHz SILICON SCHOTTKY BARRIER DIODES • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • High Forward Conductance — 0.5 Volts (Typ) @ IF = 10 mA 2 CATHODE 1 ANODE 1 2 3 CATHODE CASE 182– 02, STYLE 1 (TO–226AC) 1 ANODE 3 MAXIMUM RATINGS MBD101 Rating 1 MMBD101LT1 2 Symbol Value Unit Reverse Voltage VR 7.0 Volts Forward Power Dissipation @ TA = 25°C Derate above 25°C PF Junction Temperature TJ +150 °C Tstg – 55 to +150 °C 280 2.2 Storage Temperature Range 225 1.8 CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) mW mW/°C DEVICE MARKING MMBD101LT1 = 4M ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 7.0 10 — Volts Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) Forward Voltage(1) (IF = 10 mAdc) CT — 0.88 1.0 pF VF — 0.5 0.6 Volts Reverse Leakage (VR = 3.0 Vdc) IR — 0.02 0.25 µAdc Reverse Breakdown Voltage (IR = 10 µAdc) NOTE: MMBD101LT1 is also available in bulk packaging. Use MMBD101L as the device title to order this device in bulk. Preferred devices are Motorola recommended choices for future use and best overall value. Thermal Clad is a registered trademark of the Berquist Company. Small–Signal Transistors, FETs and Diodes Device Data Motorola Motorola, Inc. 1997 1 TYPICAL CHARACTERISTICS (TA = 25°C unless noted) 100 0.5 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 1.0 0.7 VR = 3.0 Vdc 0.2 0.1 0.07 0.05 TA = 85°C 10 TA = –40°C 1.0 TA = 25°C 0.02 0.01 0.1 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (°C) 120 130 0.3 0.4 Figure 1. Reverse Leakage Figure 2. Forward Voltage 1.0 11 10 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (TEST CIRCUIT IN FIGURE 5) 9.0 0.9 NF, NOISE FIGURE (dB) C, CAPACITANCE (pF) 0.5 0.6 0.7 VF, FORWARD VOLTAGE (VOLTS) 0.8 0.7 8.0 7.0 6.0 5.0 4.0 3.0 2.0 0.6 0 1.0 2.0 3.0 4.0 1.0 0.1 0.2 0.5 1.0 2.0 VR, REVERSE VOLTAGE (VOLTS) PLO, LOCAL OSCILLATOR POWER (mW) Figure 3. Capacitance Figure 4. Noise Figure LOCAL OSCILLATOR UHF NOISE SOURCE H.P. 349A DIODE IN TUNED MOUNT NOISE FIGURE METER H.P. 342A IF AMPLIFIER NF = 1.5 dB f = 30 MHz 5.0 10 NOTES ON TESTING AND SPECIFICATIONS Note 1 — CC and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 — Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Note 3 — LS is measured on a package having a short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter). Figure 5. Noise Figure Test Circuit 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIM K MINIMUM. B R SEATING PLANE D P ÉÉ L F K J DIM A B C D F G H J K L N P R V SECTION X–X X X D G H V 1 C N 2 CASE 182–02 (TO–226AC) ISSUE H N A L 3 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE B S 1 V 2 G C H D J K INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.050 BSC 0.100 BSC 0.014 0.016 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.050 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.49 0.41 0.56 0.407 0.482 1.27 BSC 3.54 BSC 0.36 0.41 12.70 ––– 6.35 ––– 2.03 2.66 ––– 1.27 2.93 ––– 3.43 ––– STYLE 1: PIN 1. ANODE 2. CATHODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 CASE 318–08 ISSUE AF SOT–23 (TO–236AB) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps 4 ◊ MBD101/D Motorola Small–Signal Transistors, FETs and Diodes Device Data