Order this document by MBR150/D SEMICONDUCTOR TECHNICAL DATA . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes. • • • • MBR160 is a Motorola Preferred Device Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 50, 60 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case • Shipped in plastic bags, 1000 per bag • Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the part number • Polarity: Cathode Indicated by Polarity Band • Marking: B150, B160 CASE 59–04 PLASTIC MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Forward Current (2) (VR(equiv) 0.2 VR(dc), TL = 90°C, RθJA = 80°C/W, P.C. Board Mounting, see Note 3, TA = 55°C) v Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz, TL = 70°C) Operating and Storage Junction Temperature Range (Reverse Voltage applied) Peak Operating Junction Temperature (Forward Current applied) Symbol MBR150 MBR160 Unit VRRM VRWM VR 50 60 Volts VR(RMS) 35 42 Volts IO 1 Amp IFSM 25 (for one cycle) Amps TJ, Tstg *65 to +150 °C TJ(pk) 150 °C Symbol Max Unit RθJA 80 °C/W Symbol Max Unit THERMAL CHARACTERISTICS (Notes 3 and 4) Characteristic Thermal Resistance, Junction to Ambient ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2) Characteristic Maximum Instantaneous Forward Voltage (1) (iF = 0.1 A) (iF = 1 A) (iF = 3 A) vF Maximum Instantaneous Reverse Current @ Rated dc Voltage (1) (TL = 25°C) (TL = 100°C) iR Volt 0.550 0.750 1.000 mA 0.5 5 (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. (2) Lead Temperature reference is cathode lead 1/32″ from case. Preferred devices are Motorola recommended choices for future use and best overall value. Rev 1 Device Rectifier Motorola, Inc. 1996 Data 1 10 10 TJ = 150°C 5.0 TJ = 150°C 100°C I R , REVERSE CURRENT (mA) 7.0 25°C 5.0 3.0 1.0 100°C 0.5 0.2 0.1 75°C 0.05 0.02 0.01 25°C 0.005 0.002 0.001 0.7 10 0 20 30 50 40 VR, REVERSE VOLTAGE (VOLTS) 0.5 60 70 Figure 2. Typical Reverse Current* *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 0.3 0.2 5.0 0.1 PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 2.0 125°C 2.0 1.0 0.07 0.05 0.03 0.02 0 SQUARE WAVE 4.0 3.0 dc 2.0 5 p 10 IPK/IAV = 20 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.6 1.4 1.0 3.0 2.0 4.0 5.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 1. Typical Forward Voltage Figure 3. Forward Power Dissipation THERMAL CHARACTERISTICS r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 ZθJL(t) = ZθJL • r(t) 0.3 0.2 tp 0.1 Ppk Ppk TIME 0.07 0.05 DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. t1 ∆TJL = Ppk • RθJL [D + (1 – D) • r(t1 + tp) + r(tp) – r(t1)] where ∆TJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t, from Figure 4, i.e.: r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp. 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1k 2k 5k 10 k t, TIME (ms) Figure 4. Thermal Response 2 Rectifier Device Data 90 200 BOTH LEADS TO HEAT SINK, EQUAL LENGTH TJ = 25°C f = 1 MHz 70 C, CAPACITANCE (pF) R qJL , THERMAL RESISTANCE, JUNCTION–TO–LEAD ( °C/W) 80 60 MAXIMUM 50 TYPICAL 40 30 100 80 70 60 50 40 30 20 10 20 1/8 0 1/4 3/8 1/2 5/8 7/8 3/4 1.0 10 0 20 30 40 50 60 70 80 L, LEAD LENGTH (INCHES) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Steady–State Thermal Resistance Figure 6. Typical Capacitance NOTE 3 — MOUNTING DATA: Data shown for thermal resistance junction–to–ambient (RθJA) for the mounting shown is to be used as a typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. Mounting Method 1 P.C. Board with 1–1/2″ x 1–1/2″ copper surface. É É ÉÉÉÉÉÉÉ É É É ÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉ L Typical Values for RθJA in Still Air Lead Length, L (in) Mounting g Method 1/8 1/4 1/2 3/4 1 52 65 72 85 °C/W 2 67 80 87 100 °C/W 3 — RθJA °C/W 50 L Mounting Method 2 L 90 100 Mounting Method 3 P.C. Board with 1–1/2″ x 1–1/2″ copper surface. L = 3/8″ BOARD GROUND PLANE L VECTOR PIN MOUNTING NOTE 4 — THERMAL CIRCUIT MODEL: (For heat conduction through the leads) RθS(A) RθL(A) RθJ(A) TA(A) RθL(K) RθJ(K) RθS(K) TA(K) PD TL(A) TC(A) TJ TC(K) TL(K) Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink. Terms in the model signify: TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RθS = Thermal Resistance, Heat Sink to Ambient RθL = Thermal Resistance, Lead to Heat Sink RθJ = Thermal Resistance, Junction to Case PD = Power Dissipation Rectifier Device Data (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RθL = 100°C/W/in typically and 120°C/W/in maximum. RθJ = 36°C/W typically and 46°C/W maximum. NOTE 5 — HIGH FREQUENCY OPERATION: Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 6.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. 3 PACKAGE DIMENSIONS NOTES: 1. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO–41 OUTLINE SHALL APPLY. 2. POLARITY DENOTED BY CATHODE BAND. 3. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. B K D DIM A B D K A MILLIMETERS MIN MAX 5.97 6.60 2.79 3.05 0.76 0.86 27.94 ––– INCHES MIN MAX 0.235 0.260 0.110 0.120 0.030 0.034 1.100 ––– K CASE 59–04 ISSUE M Motorola reserves the right to make changes without further notice to any products herein. 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