ONSEMI MBR360RL

MBR350, MBR360
MBR360 is a Preferred Device
Axial Lead Rectifiers
These devices employ the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
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Features
•
•
•
•
•
•
•
Extremely Low vF
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Low Stored Charge, Majority Carrier Conduction
Shipped in plastic bags, 500 per bag
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to
the part number
These devices are manufactured with a Pb−Free external lead
finish only*
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
50, 60 VOLTS
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
AXIAL LEAD
CASE 267−05
(DO−201AD)
STYLE 1
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16 in from case
Polarity: Cathode indicated by Polarity Band
MARKING DIAGRAM
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR350
MBR360
Average Rectified Forward Current
TA = 65°C (RJA = 28°C/W,
P.C. Board Mounting)
Non−Repetitive Peak Surge Current
(Note 1) (Surge Applied at Rated Load
Conditions Halfwave, Single Phase,
60 Hz, TL = 75°C)
Operating and Storage Junction
Temperature Range
(Reverse Voltage Applied)
Peak Operating Junction Temperature
(Forward Current Applied)
Symbol
VRRM
VRWM
VR
Max
Unit
50
60
IO
3.0
A
IFSM
80
A
December, 2004 − Rev. 4
MBR3x0= Device Code
x
= 5 or 6
ORDERING INFORMATION
Package
Shipping†
MBR350
Axial Lead
500 Units/Bag
MBR350RL
Axial Lead
1500/Tape & Reel
MBR360
Axial Lead
500 Units/Bag
MBR360RL
Axial Lead
1500/Tape & Reel
Device
TJ, Tstg
TJ(pk)
°C
−65 to +150
°C
150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Lead Temperature reference is cathode lead 1/32 in from case.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2004
MBR
3x0
V
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MBR350/D
MBR350, MBR360
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient (see Note 4, Mounting Method 3)
Symbol
Max
Unit
RJA
28
°C/W
Symbol
Max
Unit
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 2)
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF = 9.4 Amp)
vF
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 3)
TL = 25°C
TL = 100°C
iR
V
0.600
0.740
1.080
mA
0.60
20
2. Lead Temperature reference is cathode lead 1/32 in from case.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
20
75°C
25°C
I , REVERSE CURRENT (mA)
R
TJ = 100°C
20
10
10
7.0
3.0
5.0
2.0
1.0
0.50
100°C
75°C
0.20
0.10
0.05
*The curves shown are typical for the highest
voltage device in the voltage grouping. Typical
reverse current for lower voltage selections can
be estimated from these same curves if VR is
sufficiently below rated VR.
0.02
0.01
2.0
25°C
0.005
0.002
1.0
0
10
20
30
40
50
60
80
VR REVERSE VOLTAGE (VOLTS)
0.7
Figure 2. Typical Reverse Current*
, AVERAGE FORWARD CURRENT (AMPS)
0.5
0.3
0.2
0.1
0.07
0.05
5.0
RATED VR
RJA = 28°C/W
4.0
DC
3.0
SQUARE
WAVE
2.0
1.0
TJ = 150°C
F (AV)
0.03
0.02
I
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
5.0
TJ = 150°C
0
0.2
0.6
0.8
0.4
1.0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
1.2
1.4
0
0
20
40
60
80
100
120
TA, AMBIENT TEMPERATURE (C°)
140
Figure 3. Current Derating Ambient
(Mounting Method #3 per Note 4)
Figure 1. Typical Forward Voltage
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2
160
5.0
300
4.0
200
TJ = 150°C
3.0
C, CAPACITANCE (pF)
P
, AVERAGE POWER DISSIPATION (WATTS)
F (AV)
MBR350, MBR360
SQUARE
WAVE
2.0
dc
TJ = 25°C
100
70
50
1.0
40
0
30
0
1.0
2.0
3.0
4.0
IF (AV), AVERAGE FORWARD CURRENT (AMPS)
0
5.0
10
Figure 4. Power Dissipation
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
NOTE 4 — MOUNTING DATA
Data shown for thermal resistance junction−to−ambient
(RJA) for the mountings shown is to be used as typical
guideline values for preliminary engineering, or in case the
tie point temperature cannot be measured.
TYPICAL VALUES FOR RJA IN STILL AIR
Mounting
Method
Lead Length, L (in)
1/8
1/4
1/2
3/4
RJA
1
50
51
53
55
°C/W
2
58
59
61
63
°C/W
3
°C/W
28
Mounting Method 1
Mounting Method 2
P.C. Board where available
copper surface is small.
Vector Push−In
Terminals T−28
L
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
L
ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
L
Mounting Method 3
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
P.C. Board with
2−1/2″ X 2−1/2″
copper surface.
L = 1/2’’
Board Ground Plane
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3
L
50
MBR350, MBR360
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 267−05
(DO−201AD)
ISSUE G
K
D
A
1
2
B
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
D
K
INCHES
MIN
MAX
0.287
0.374
0.189
0.209
0.047
0.051
1.000
−−−
MILLIMETERS
MIN
MAX
7.30
9.50
4.80
5.30
1.20
1.30
25.40
−−−
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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For additional information, please contact your
local Sales Representative.
MBR350/D