MOTOROLA MUR1100E

Order this document
by MUR190E/D
SEMICONDUCTOR TECHNICAL DATA
 Ultrafast “E’’ Series with High Reverse
Energy Capability
. . . designed for use in switching power supplies, inverters and as
free wheeling diodes, these state–of–the–art devices have the
following features:
MUR1100E is a
Motorola Preferred Device
• 20 mjoules Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
• Ultrafast 75 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• Reverse Voltage to 1000 Volts
ULTRAFAST
RECTIFIERS
1.0 AMPERE
900–1000 VOLTS
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering
Purposes: 220°C Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 1000 per bag
• Available Tape and Reeled, 5000 per reel, by adding a “RL’’
suffix to the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: U190E, U1100E
CASE 59–04
MAXIMUM RATINGS
MUR
R i
Rating
S b l
Symbol
190E
1100E
U i
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
900
1000
Volts
Average Rectified Forward Current (Square Wave)
(Mounting Method #3 Per Note 1)
IF(AV)
1.0 @ TA = 95°C
Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
IFSM
35
Amps
TJ, Tstg
*65 to +175
°C
RθJA
See Note 1
°C/W
Operating Junction Temperature and Storage Temperature
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Ambient
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
SWITCHMODE is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 1
Device
Rectifier
Motorola, Inc.
1996 Data
1
ELECTRICAL CHARACTERISTICS
MUR
R i
Rating
S b l
Symbol
190E
1100E
U i
Unit
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 Amp, TJ = 150°C)
(iF = 1.0 Amp, TJ = 25°C)
vF
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 100°C)
(Rated dc Voltage, TJ = 25°C)
iR
Maximum Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 Amp/µs)
(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp)
trr
Maximum Forward Recovery Time
(IF = 1.0 Amp, di/dt = 100 Amp/µs, Recovery to 1.0 V)
tfr
75
ns
WAVAL
10
mJ
Controlled Avalanche Energy (See Test Circuit in Figure 6)
Volts
1.50
1.75
µA
600
10
ns
100
75
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
2
Rectifier Device Data
ELECTRICAL CHARACTERISTICS
1000
IR, REVERSE CURRENT (m A)
20
10
7.0
3.0
TJ = 175°C
25°C
2.0
10
100°C
1.0
25°C
0.1
100°C
0.01
1.0
0
100
200
300
400
500
600
700
800
900 1000
0.7
VR, REVERSE VOLTAGE (VOLTS)
0.5
Figure 2. Typical Reverse Current*
0.3
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if VR is sufficiently below rated VR.
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.3 0.5
0.9
0.7
1.1
1.3
1.5
1.7
1.9
2.1
2.3
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
5.0
TJ = 175°C
100
5.0
4.0
RATED VR
RqJA = 50°C/W
3.0
2.0
dc
SQUARE WAVE
1.0
0
0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
50
100
150
200
250
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Typical Forward Voltage
5.0
I
(CAPACITIVE LOAD) PK
I
AV
4.0
10
+ 20
20
5.0
TJ = 25°C
C, CAPACITANCE (pF)
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
Figure 3. Current Derating
(Mounting Method #3 Per Note 1)
3.0
dc
TJ = 175°C
2.0
SQUARE WAVE
1.0
10
7.0
5.0
3.0
2.0
0
0
0.5
1.0
1.5
2.0
2.5
0
10
20
30
40
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Power Dissipation
Figure 5. Typical Capacitance
Rectifier Device Data
50
3
+VDD
IL
40 mH COIL
BVDUT
VD
ID
MERCURY
SWITCH
ID
IL
DUT
S1
VDD
t0
t1
t2
t
Figure 6. Test Circuit
Figure 7. Current–Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A mercury
switch was used instead of an electronic switch to simulate a
noisy environment when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch is
opened and the voltage across the diode under test begins to
rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1 is
opened; and calculating the energy that is transferred to the
diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite com-
ponent resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy
transferred to the diode. It can be seen from this equation
that if the VDD voltage is low compared to the breakdown
voltage of the device, the amount of energy contributed by
the supply during breakdown is small and the total energy
can be assumed to be nearly equal to the energy stored in
the coil during the time when S1 was closed, Equation (2).
The oscilloscope picture in Figure 8, shows the information
obtained for the MUR8100E (similar die construction as the
MUR1100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 volts,
and using Equation (2) the energy absorbed by the
MUR8100E is approximately 20 mjoules.
Although it is not recommended to design for this condition, the new “E’’ series provides added protection against
those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments.
EQUATION (1):
W
AVAL
[ 12 LI 2LPK
ǒ
BV
DUT
BV
–V
DUT DD
Ǔ
500V
50mV
CH1
CH2
A
20ms
953 V
VERT
CHANNEL 1:
VDUT
500 VOLTS/DIV.
EQUATION (2):
W
AVAL
CHANNEL 2:
IL
0.5 AMPS/DIV.
[ 12 LI 2LPK
1
CH1
ACQUISITIONS
SAVEREF SOURCE
CH2
217:33 HRS
STACK
REF
REF
TIME BASE:
20 ms/DIV.
Figure 8. Current–Voltage Waveforms
4
Rectifier Device Data
NOTE 1 — AMBIENT MOUNTING DATA
Data shown for thermal resistance junction to
ambient (RθJA) for the mountings shown is to be used
as typical guideline values for preliminary
engineering or in case the tie point temperature
cannot be measured.
TYPICAL VALUES FOR RθJA IN STILL AIR
Mounting
Method
1
2
RθJA
Lead Length, L
1/4
1/2
1/8
52
65
72
67
80
87
Units
°C/W
°C/W
50
°C/W
3
MOUNTING METHOD 1
L
L
ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
MOUNTING METHOD 2
ÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉ
L
L
Vector Pin Mounting
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
MOUNTING METHOD 3
L = 3/8 ″
Board Ground Plane
P.C. Board with
1–1/2″ X 1–1/2 ″ Copper Surface
Rectifier Device Data
5
PACKAGE DIMENSIONS
NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO–41 OUTLINE SHALL APPLY.
2. POLARITY DENOTED BY CATHODE BAND.
3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
B
K
D
DIM
A
B
D
K
A
MILLIMETERS
MIN
MAX
5.97
6.60
2.79
3.05
0.76
0.86
27.94
–––
INCHES
MIN
MAX
0.235
0.260
0.110
0.120
0.030
0.034
1.100
–––
K
CASE 59–04
ISSUE M
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6
◊
MUR190E/D
Rectifier Device
Data