SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS FMMTA06 ISSUE 5 – MARCH 2001 FEATURES * 80 Volt VCEO * Gain of 50 at IC=100mA E C PARTMARKING DETAIL – FMMTA06 – 1G FMMTA06R – MA B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 80 V Collector-Emitter Voltage V CEO 80 V Emitter-Base Voltage V EBO 4 V Continuous Collector Current IC 500 mA Power Dissipation at T amb =25°C P tot 330 mW Operating and Storage Temperature Range T j:T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL VALUE MIN. UNIT CONDITIONS. MAX. Collector-Emitter Breakdown Voltage V (BR)CEO 80 V I C=1mA* Emitter-Base Breakdown Voltage V (BR)EBO 4 V I E=100 µ A Collector Cut-Off Current I CES 0.1 µA V CES=60V Collector Cut-Off Current I CBO 0.1 µA V CB=80V Static Forward Current Transfer Ratio h FE Collector-Emitter Saturation Voltage V CE(sat) 0.25 V I C=100mA, I B=10mA* Base-Emitter Turn-On Voltage V BE(on) 1.2 V I C =100mA, V CE=1V* Transition Frequency fT MHz I C=10mA, V CE=2V f=100MHz 50 50 100 I C=10mA, V CE=1V* I C=100mA, V CE=1V* *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device TBA