TCST1210 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Applications D Contactless optoelectronic switch, control 95 10541 and counter 15118 Features D Compact construction D No setting efforts D Polycarbonate case protected against ambient light D Current Transfer Ratio (CTR) of typical 10% 10.0 Top view Order Instruction Ordering Code TCST1210 Document Number 83769 Rev. A1, 08–Jun–99 Resolution (mm) / Aperture (mm) 0.4 / 0.5 Remarks www.vishay.com 1 (6) TCST1210 Vishay Telefunken Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 5 50 1 100 100 Unit V mA A mW °C Symbol VCEO VECO IC ICM PV Tj Value 30 5 30 100 100 100 Unit V V mA mA mW °C Symbol Ptot Tamb Tstg Tsd Value 200 –20 to +85 –30 to +100 260 Unit mW °C °C °C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Total power dissipation Operating temperature range Storage temperature range Soldering temperature Test Conditions Tamb ≤ 25°C 2 mm from case, t ≤ 5 s Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Reverse voltage Junction capacitance Test Conditions IF = 20 mA IR = 10 mA VR = 0, f = 1 MHz Symbol VF VR Cj Min. Test Conditions IC = 1 mA IE = 10 mA VCE = 10 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 30 5 Test Conditions VCE = 5 V, IF = 20 mA VCE = 5 V, IF = 20 mA Symbol CTR IC Min. 2.5 0.5 Typ. 1.25 Max. 1.6 Unit V V pF Max. Unit V V nA 5 50 Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current Typ. 100 Coupler Parameter Current transfer ratio Collector current www.vishay.com 2 (6) Typ. 10 2 Max. Unit % mA Document Number 83769 Rev. A1, 08–Jun–99 TCST1210 Vishay Telefunken Switching Characteristics Parameter Rise time Fall time 0 IF Test Conditions VS = 5 V, IC = 100 m mA, RL = 1 kW (see figure 1) Symbol tr tf Typ. 20.0 20.0 +5V IF IC = 100 mA Adjusted throug input amplitude RG = 50 W tp = 0.01 T tp = 50 ms Unit ms ms 96 11698 IF 0 t tp IC Channel I Channel II 50 W 1 kW Oscilloscope RL > 1 M W CL < 20 pF 100% 90% 15119 Figure 1. Test circuit 10% 0 t tr ts td ton tp td tr ton (= td + tr) tf toff pulse duration delay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time Figure 2. Switching times Document Number 83769 Rev. A1, 08–Jun–99 www.vishay.com 3 (6) TCST1210 Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 10 10 1 1 0.1 0.01 0.001 0.1 0 0.4 0.8 1.2 1.6 0.1 2.0 Figure 3. Forward Current vs. Forward Voltage 100 10 Figure 6. Collector Current vs. Forward Current 10 1.2 IF=50mA IC – Collector Current ( mA ) 1.0 0.8 0.6 20mA 1 10mA 5mA 0.1 2mA 1mA VCE=10V IF=10mA 0.4 –25 0.01 0 25 50 75 0.1 100 Tamb – Ambient Temperature ( °C ) 16098 1 100 10 VCE – Collector Emitter Voltage ( V ) 16101 Figure 4. Relative Current Transfer Ratio vs. Ambient Temperature Figure 7. Collector Current vs. Collector Emitter Voltage 1000 100 CTR – Current Transfer Ratio ( % ) I CEO– Collector Dark Current, with open Base ( µ A ) 1 IF – Forward Current ( mA ) 16100 VF – Forward Voltage ( V ) 16097 CTR rel – Relative Current Transfer Ratio VCE = 5V I C – Collector Current ( mA ) I F – Forward Current ( mA ) 100 VCE=10V IF=0 100 10 1 0 16099 25 50 75 Figure 5. Collector Dark Current vs. Ambient Temperature www.vishay.com 4 (6) 1 VCE=5V 0.1 100 Tamb – Ambient Temperature ( °C ) 10 0.1 16102 1 10 100 IF – Forward Current ( mA ) Figure 8. Current Transfer Ratio vs. Forward Current Document Number 83769 Rev. A1, 08–Jun–99 TCST1210 Vishay Telefunken Dimensions of TCST1210 in mm 15121 Document Number 83769 Rev. A1, 08–Jun–99 www.vishay.com 5 (6) TCST1210 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.com 6 (6) Document Number 83769 Rev. A1, 08–Jun–99