Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) Tj 150 –55to+150 °C Tstg IC=30mA 150min VCE=4V, IC=10A 5000min∗ VCE(sat) IC=10A, IB=10mA 2.5max W VBE(sat) IC=10A, IB=10mA 3.0max V °C fT VCE=12V, IE=–2A 70typ MHz COB VCB=10V, f=1MHz 120typ pF a ø3.2±0.1 b V 2 3 1.05 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 40 4 10 10 –5 10 –10 0.8typ 4.0typ 1.2typ 5 0 I B =0.3mA 0 2 4 I C =.10A 1 I C =.5A 0 0.2 6 0.5 1 Collector-Emitter Voltage V C E (V) 5 10 50 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 50000 Typ 10000 5000 1000 12 5˚C Transient Thermal Resistance DC C urrent G ain h FE 50000 10000 25 5000 – ˚C C 30˚ 1000 1 5 10 f T – I E Characteristics (Typical) 15 500 02 0.5 1 5 10 15 0.1 P c – T a Derating 130 at si nk Maxim um Power Dissip ation P C (W) 100 he –10 1000 2000 ite –5 100 Time t(ms) fin 158 10 In –1 1 ith 20 –0.5 ) 0.5 W 40 2.2 1.0 Safe Operating Area (Single Pulse) 60 2 3.0 80 Emitter Current I E (A) 1 θ j-a – t Characteristics (V C E =12V) 0 –0.02 –0.05 –01 0 Collector Current I C (A) Collector Current I C (A) Cut- off F req uency f T (M H Z ) DC C urrent G ain h FE 0 100 200 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 5 Base Current I B (mA) h FE – I C Characteristics (Typical) 500 02 emp I C =.15A 10 (Cas 0.5mA 2 eT Collector Current I C (A) 0. 8m A 10 25˚C 1. 0m A Cas mA 125 1.5 (V C E =4V) 15 Collector Current I C (A) 2m A I C – V BE Temperature Characteristics (Typical) 3 θ j- a ( ˚C/W) 50mA 3mA 1.4 E Weight : Approx 6.0g a. Type No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 10mA C ˚C ( I C – V CE Characteristics (Typical) 15 5.45±0.1 B VCC (V) 0.65 +0.2 -0.1 mp) V 15 e Te 5 IC mp) VEBO 2.0±0.1 (Cas 150 4.8±0.2 –30˚C VCEO 15.6±0.4 9.6 e Te V 1.8 VCB=150V 150 5.0±0.2 ICBO VCBO 2.0 Unit Symbol E External Dimensions MT-100(TO3P) (Ta=25°C) 2SD2560 Unit 4.0 ■Electrical Characteristics Conditions 2SD2560 19.9±0.3 Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) (7 0 Ω ) Application : Audio, Series Regulator and General Purpose 20.0min Darlington C B 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150