( 7 0Ω ) E 2SB1659 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589) Conditions 2SB1659 Unit V ICBO VCB=–110V –100max µA VCEO –110 V IEBO VEB=–5V –100max µA VEBO –5 V V(BR)CEO IC=–30mA –110min V IC –6 A hFE VCE=–4V, IC=–5A 5000min∗ IC=–5A, IB=–5mA –2.5max IC=–5A, IB=–5mA –3.0max V IB –1 A VCE(sat) PC 50(Tc=25°C) W VBE(sat) Tj 150 °C fT VCE=–12V, IE=0.5A 100typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 110typ pF Tstg 10.2±0.2 V 4.8±0.2 3.0±0.2 Unit –110 16.0±0.7 Symbol 2SB1659 VCBO Symbol C External Dimensions MT-25(TO220) (Ta=25°C) 8.8±0.2 ■Electrical Characteristics 2.0±0.1 ø3.75±0.2 a b 1.35 4.0max ■Absolute maximum ratings (Ta=25°C) Equivalent circuit Application : Audio, Series Regulator and General Purpose 12.0min Darlington B 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 2.5 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –30 6 –5 –10 5 –5 5 1.1typ 3.2typ 1.1typ 0 0 –2 –4 –6 0 –0.1 –0.5 –1 Collector-Emitter Voltage V C E (V) –5 –10 h FE – I C Characteristics (Typical) (V C E =–4V) 50000 5000 1000 500 –1 –5 –6 25˚C 10000 –30˚C 5000 1000 500 100 –0.02 –0.05 –0.1 –0.5 f T – I E Characteristics (Typical) –1 –5 –6 p) eT e mp) ) Cas 50 30 at si nk Maxim um Power Dissipation P C (W) 40 he 5 6 emp P c – T a Derating ite 1 1000 2000 fin 0.5 100 Time t(ms) In 0.1 Emitter Current I E (A) 10 ith 20 0.05 1 W 40 0 0.02 Tem 0.4 120 60 ˚C ( 0.5 Safe Operating Area (Single Pulse) 80 –3 1 (V C E =–12V) Typ –2 5 Collector Current I C (A) Collector Current I C (A) 100 –1 θ j-a – t Characteristics Transient Thermal Resistance D C Cur r ent Gai n h F E 10000 Cut-o ff F requ ency f T (M H Z ) DC Cur rent Gain h FE 125˚C Typ –0.5 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) (V C E =–4V) –0.05 –0.1 0 –50 –100 Base Current I B (mA) 40000 200 –0.02 –2 –30 I C =–3A –1 –4 se –5A seT I B =–0. 1mA –2 –2 (Ca Collector Current I C (A) –0. 2m A –4 (V CE =–4V) –6 –3 (Ca –0 .3 m A ˚C A 25˚C .4m 125 . –0 I C – V BE Temperature Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) Collector Current I C (A) –0 Weight : Approx 2.0g a. Type No. b. Lot No. θ j- a ( ˚C/W) –5m A –6 1.4 A Collector-Emitter Saturation Voltage V C E (s at) (V) –1 m A I C – V CE Characteristics (Typical) 5m 2.5 B C E 20 10 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 57