SANKEN 2SD2389

Equivalent circuit
2SD2389
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1559)
V
VCEO
150
VEBO
IC
Unit
ICBO
VCB=160V
100max
µA
V
IEBO
VEB=5V
100max
µA
5
V
V(BR)CEO
IC=30mA
150min
V
8
A
hFE
VCE=4V, IC=6A
5000min∗
IC=6A, IB=6mA
2.5max
19.9±0.3
2SD2389
a
4.8±0.2
2.0±0.1
ø3.2±0.1
b
V
IB
1
A
VCE(sat)
PC
80(Tc=25°C)
W
VBE(sat)
IC=6A, IB=6mA
3.0max
V
Tj
150
°C
fT
VCE=12V, IE=–1A
80typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
85typ
pF
Tstg
15.6±0.4
9.6
1.8
160
E
External Dimensions MT-100(TO3P)
(Ta=25°C)
Conditions
5.0±0.2
VCBO
Symbol
2.0
Unit
4.0
■Electrical Characteristics
(Ta=25°C)
2SD2389
Symbol
2
4.0max
■Absolute maximum ratings
(7 0 Ω )
Application : Audio, Series Regulator and General Purpose
20.0min
Darlington
C
B
3
1.05 +0.2
-0.1
0.65 +0.2
-0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
60
10
6
10
–5
6
–6
0.6typ
10.0typ
0.9typ
0
0
2
4
0
6
0.2
0.5
1
Collector-Emitter Voltage V C E (V)
5
10
50
0
100 200
h FE – I C Temperature Characteristics (Typical)
(V C E =4V)
40000
50000
Typ
10000
5000
Transient Thermal Resistance
DC C urrent G ain h FE
DC C urrent G ain h FE
125˚C
25˚C
10000
5000
–30˚C
1000
0.5
0
1
5
500
0.2
8
0.5
Collector Current I C (A)
e Te
(Cas
2
1
5
θ j-a – t Characteristics
4
1
0.5
0.2
8
1
5
10
50 100
500 1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
mp)
mp)
1
Base-Emittor Voltage V B E (V)
(V C E =4V)
1000
02
2
Base Current I B (mA)
h FE – I C Characteristics (Typical)
e Te
I C =4A
1
4
(Cas
I B =0.3mA
I C =6A
–30˚C
2
I C =8A
mp)
0.5mA
6
25˚C
4
2
e Te
0.8 mA
Cas
1.0m A
6
(V CE =4V)
8
3
˚C (
1. 3m A
125
A
Collector Current I C (A)
1.5m
1.4
E
I C – V BE Temperature Characteristics (Typical)
θ j - a ( ˚ C/W)
5m
2. A
0m
A
1.
C
Weight : Approx 2.0g
a. Type No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
A
8m
Collector-Emitter Saturation Voltage V C E (sa t) (V )
Collector Current I C (A)
8
2.
10mA
I C – V CE Characteristics (Typical)
5.45±0.1
B
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
120
80
20
10
Typ
s
5
40
at
si
nk
Collect or Cur ren t I C (A)
he
Without Heatsink
Natural Cooling
ite
0.1
20
fin
0.5
In
40
1
60
ith
60
C
W
D
80
s
0m
100
Cut- off F req uenc y f T (MH Z )
m
M aximum Power Dissipa ti on P C (W)
10
10
20
0.05
0
–0.02
–0.1
–1
Emitter Current I E (A)
148
–8
0.03
3
Without Heatsink
5
10
50
100
Collector-Emitter Voltage V C E (V)
150
200
3.5
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150