SANKEN 2SD2390

Equivalent circuit
2SD2390
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560)
VCB=160V
100max
µA
V
IEBO
VEB=5V
100max
µA
V
V
VCEO
150
5
V
V(BR)CEO
IC=30mA
150min
IC
10
A
hFE
VCE=4V, IC=7A
5000min∗
IB
1
A
VCE(sat)
IC=7A, IB=7mA
2.5max
PC
100(Tc=25°C)
W
VBE(sat)
IC=7A, IB=7mA
3.0max
V
Tj
150
°C
fT
VCE=12V, IE=–2A
55typ
MHz
–55 to +150
°C
COB
a
4.8±0.2
2.0±0.1
ø3.2±0.1
b
V
pF
95typ
VCB=10V, f=1MHz
19.9±0.3
VEBO
Tstg
15.6±0.4
9.6
1.8
ICBO
160
2.0
Unit
VCBO
E
External Dimensions MT-100(TO3P)
(Ta=25°C)
2SD2390
Unit
5.0±0.2
Symbol
Conditions
2SD2390
2
4.0max
Symbol
4.0
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
(7 0 Ω )
Application : Audio, Series Regulator and General Purpose
20.0min
Darlington
C
B
3
1.05 +0.2
-0.1
0.65 +0.2
-0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
70
10
7
10
–5
7
–7
0.5typ
10.0typ
1.1typ
0
0
2
4
2
0
6
0.2
0.5
1
Collector-Emitter Voltage V C E (V)
5
10
50
0
100 200
(V C E =4V)
70000
50000
5000
10000
25˚C
5000
–30˚C
Transient Thermal Resistance
D C Cur r ent Gai n h F E
10000
1000
5
500
0.2
10
0.5
Collector Current I C (A)
mp)
mp)
e Te
e Te
2.5
1
5
10
3
1
0.5
0.1
1
5
10
50 100
500 1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
80
10
100
10
100
30
50
at
si
nk
Without Heatsink
Natural Cooling
20
he
0.5
ite
1
fin
40
s
In
60
0m
ith
Typ
10
DC
5
W
Collect or Cur ren t I C (A)
s
Ma xim um Powe r Dissipat io n P C (W)
m
Cut- off F req uency f T (M H Z )
D C Cur r ent Gai n h F E
125˚C
Typ
2
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
40000
1
1
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.5
0
Base Current I B (mA)
h FE – I C Characteristics (Typical)
1000
02
4
(Cas
I C =5A
(Cas
I C =7A
1
6
–30˚C
I B =0.4mA
2
I C =10A
p)
0.6mA
4
2
25˚C
0.8mA
Tem
6
8
se
1m A
(Ca
1.2 mA
˚C
Collector Current I C (A)
8
(V CE =4V)
10
3
125
1. 5m A
Collector Current I C (A)
A
1.4
E
I C – V BE Temperature Characteristics (Typical)
θ j- a ( ˚ C/W)
2m
Collector-Emitter Saturation Voltage V C E (sa t) (V )
10 m A
2.
5m
A
10
C
Weight : Approx 2.0g
a. Type No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
I C – V CE Characteristics (Typical)
5.45±0.1
B
0.1
0
–0.02
–0.1
–1
Emitter Current I E (A)
–10
0.05
3
5
10
50
100
Collector-Emitter Voltage V C E (V)
200
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
149