SANKEN 2SB1648

( 7 0Ω ) E
2SB1648
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561)
Unit
–150
V
Symbol
ICBO
VCEO
–150
V
IEBO
VEBO
–5
V
V(BR)CEO
IC
–17
A
hFE
IB
–1
A
VCE(sat)
PC
200(Tc=25°C)
W
VBE(sat)
Tj
150
°C
fT
Tstg
–55 to +150
2SB1648
Unit
–100max
µA
36.4±0.3
24.4±0.2
VEB=–5V
–100max
µA
IC=–30mA
–150min
V
VCE=–4V, IC=–10A
5000min∗
IC=–10A, IB=–10mA
–2.5max
V
IC=–10A, IB=–10mA
–3.0max
V
VCE=–12V, IE=2A
45typ
MHz
COB
°C
Conditions
VCB=–150V
320typ
VCB=–10V, f=1MHz
6.0±0.2
2.1
2-ø3.2±0.1
9
7
2SB1648
VCBO
pF
a
b
2
3
0.65 +0.2
-0.1
1.05 +0.2
-0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–40
4
–10
–10
5
–10
10
0.7typ
1.6typ
1.1typ
3.0 +0.3
-0.1
5.45±0.1
B
VCC
(V)
C
E
Weight : Approx 18.4g
a. Type No.
b. Lot No.
V CE ( sa t ) – I B Characteristics (Typical)
I C – V BE Temperature Characteristics (Typical)
0
–2
–4
0
–0.2
–6
–0.5 –1
Collector-Emitter Voltage V C E (V)
–10
Typ
10,000
5,000
–1
–5
–10
–17
Collector Current I C (A)
125˚C
25˚C
–30˚C
10000
5000
1000
–0.2
–0.5
–1
–5
–10
–17
)
mp
Te
se
)
emp
eT
Cas
–30
1000 2000
P c – T a Derating
200
120
at
si
nk
Maxim um Power Dissip ation P C (W)
160
he
10
100
Time t(ms)
ite
5
p)
10
fin
Cut-o ff F requ ency f T (MH Z )
1
In
Emitter Current I E (A)
(Ca
0.1
ith
1
5˚C
0.5
W
0.5
12
1
60
20
–3
θ j-a – t Characteristics
Safe Operating Area (Single Pulse)
40
–2
2
(V C E =–12V)
0.05 0.1
–1
Collector Current I C (A)
f T – I E Characteristics (Typical)
0
0.02
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
50000
–0.5
0
–50 –100 –200
h FE – I C Temperature Characteristics (Typical)
DC C urrent G ain h FE
DC C urrent G ain h FE
–5
(V C E =–4V)
1,000
–0.2
5
Base Current I B (mA)
h FE – I C Characteristics (Typical)
50,000
10
˚C (
I C =–5A
–1
θ j - a (˚C /W )
0
I C =–1 0A
Tem
I B =–0.3mA
–5
I C =–15A
ase
–0.5mA
–2
C (C
–0.8 mA
–10
15
25˚
–1.0 mA
(V CE =–4V)
17
–3
Transient Thermal Resistance
–50
–15
Collector Current I C (A)
–1 .5 m A
Collector Current I C (A)
–2mA
–3mA
mA
–17
Collector-Emitter Saturation Voltage V C E (s at) (V)
–1
0m
A
I C – V CE Characteristics (Typical)
C
External Dimensions MT-200
(Ta=25°C)
21.4±0.3
Symbol
■Electrical Characteristics
(Ta=25°C)
4.0max
■Absolute maximum ratings
Equivalent circuit
Application : Audio, Series Regulator and General Purpose
20.0min
Darlington
B
80
40
5
0
Without Heatsink
0
25
50
75
100
12 5
150
Ambient Temperature Ta(˚C)
55