( 7 0Ω ) E 2SB1648 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Unit –150 V Symbol ICBO VCEO –150 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE IB –1 A VCE(sat) PC 200(Tc=25°C) W VBE(sat) Tj 150 °C fT Tstg –55 to +150 2SB1648 Unit –100max µA 36.4±0.3 24.4±0.2 VEB=–5V –100max µA IC=–30mA –150min V VCE=–4V, IC=–10A 5000min∗ IC=–10A, IB=–10mA –2.5max V IC=–10A, IB=–10mA –3.0max V VCE=–12V, IE=2A 45typ MHz COB °C Conditions VCB=–150V 320typ VCB=–10V, f=1MHz 6.0±0.2 2.1 2-ø3.2±0.1 9 7 2SB1648 VCBO pF a b 2 3 0.65 +0.2 -0.1 1.05 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –40 4 –10 –10 5 –10 10 0.7typ 1.6typ 1.1typ 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) C E Weight : Approx 18.4g a. Type No. b. Lot No. V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) 0 –2 –4 0 –0.2 –6 –0.5 –1 Collector-Emitter Voltage V C E (V) –10 Typ 10,000 5,000 –1 –5 –10 –17 Collector Current I C (A) 125˚C 25˚C –30˚C 10000 5000 1000 –0.2 –0.5 –1 –5 –10 –17 ) mp Te se ) emp eT Cas –30 1000 2000 P c – T a Derating 200 120 at si nk Maxim um Power Dissip ation P C (W) 160 he 10 100 Time t(ms) ite 5 p) 10 fin Cut-o ff F requ ency f T (MH Z ) 1 In Emitter Current I E (A) (Ca 0.1 ith 1 5˚C 0.5 W 0.5 12 1 60 20 –3 θ j-a – t Characteristics Safe Operating Area (Single Pulse) 40 –2 2 (V C E =–12V) 0.05 0.1 –1 Collector Current I C (A) f T – I E Characteristics (Typical) 0 0.02 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 50000 –0.5 0 –50 –100 –200 h FE – I C Temperature Characteristics (Typical) DC C urrent G ain h FE DC C urrent G ain h FE –5 (V C E =–4V) 1,000 –0.2 5 Base Current I B (mA) h FE – I C Characteristics (Typical) 50,000 10 ˚C ( I C =–5A –1 θ j - a (˚C /W ) 0 I C =–1 0A Tem I B =–0.3mA –5 I C =–15A ase –0.5mA –2 C (C –0.8 mA –10 15 25˚ –1.0 mA (V CE =–4V) 17 –3 Transient Thermal Resistance –50 –15 Collector Current I C (A) –1 .5 m A Collector Current I C (A) –2mA –3mA mA –17 Collector-Emitter Saturation Voltage V C E (s at) (V) –1 0m A I C – V CE Characteristics (Typical) C External Dimensions MT-200 (Ta=25°C) 21.4±0.3 Symbol ■Electrical Characteristics (Ta=25°C) 4.0max ■Absolute maximum ratings Equivalent circuit Application : Audio, Series Regulator and General Purpose 20.0min Darlington B 80 40 5 0 Without Heatsink 0 25 50 75 100 12 5 150 Ambient Temperature Ta(˚C) 55