FAIRCHILD FDD5680

FDD5680
N-Channel, PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
•
RDS(on) = 0.025 Ω @ VGS = 6 V.
Applications
•
•
38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V
•
Low gate charge (33nC typical).
•
Fast switching speed.
•
High performance trench technology for extremely
low RDS(on).
DC/DC converter
Motor drives
D
D
G
G
S
S
TO-252
Absolute Maximum Ratings
Symbol
o
TA=25 C unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
60
V
VGSS
Gate-Source Voltage
±20
V
ID
Maximun Drain Current - Continuous
38
A
(Note 1)
(Note 1a)
Maximum Drain Current
- Pulsed
Maximum Power Dissipation @ TC = 25oC
PD
TJ, Tstg
8.5
100
(Note 1)
60
TA = 25oC
(Note 1a)
2.8
TA = 25oC
(Note 1b)
Operating and Storage Junction Temperature Range
W
1.3
-55 to +150
°C
°C/W
°C/W
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to- Case
(Note 1)
2.1
RθJA
Thermal Resistance, Junction-to- Ambient
(Note 1b)
96
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD5680
FDD5680
13’’
16mm
2500
2000 Fairchild Semiconductor International
FDD5680, Rev. C
FDD5680
July 2000
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
WDSS
IAR
BVDSS
∆BVDSS
∆TJ
IDSS
IGSSF
IGSSR
Single Pulse Drain-Source
VDD = 30 V, ID = 38 A
Avalanche Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown
VGS = 0 V, ID = 250 µA
Voltage
Breakdown Voltage
ID = 250µA, Referenced to 25°C
Temperature Coefficient
Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
On Characteristics
140
mJ
38
A
60
V
mV/°C
60
VGS = 20V, VDS = 0 V
100
µA
nA
VGS = -20 V, VDS = 0 V
-100
nA
4
V
mV/°C
0.021
0.042
0.025
Ω
1
(Note 2)
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
ID(on)
On-State Drain Current
VGS = 10 V, ID = 8.5 A
VGS = 10 V, ID = 8.5 A,TJ=125°C
VGS = 6 V, ID = 7.5 A
VGS = 10 V, VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V, ID = 8.5 A
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
2
2.4
-6.4
0.017
0.028
0.019
50
A
30
S
Dynamic Characteristics
VDS = 30 V, VGS = 0 V,
f = 1.0 MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
tf
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
1835
pF
210
pF
90
pF
(Note 2)
VDD = 30 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
15
27
ns
9
18
ns
Turn-Off Delay Time
35
56
ns
Turn-Off Fall Time
16
26
ns
33
46
nC
VDS = 30 V, ID = 8.5 A,
VGS = 10 V,
6.5
nC
7.5
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 2.3 A
(Note 2)
0.75
2.3
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθJA is determined by the user's board design.
a) RθJA= 45oC/W when mounted
b) RθJA= 96oC/W when mounted
on a 1in2 pad of 2oz copper.
on a 0.076 pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDD5680, Rev. C
FDD5680
Electrical Characteristics
FDD5680
Typical Characteristics
2.2
60
VGS = 10V
6.0V
50
2
5.0V
VGS = 4.0V
1.8
4.5V
40
1.6
4.5V
30
1.4
20
4.0V
5.0V
1.2
10
6.0V
7.0V
10V
1
3.5V
0.8
0
0
1
2
3
0
4
10
20
30
40
50
60
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.05
2
ID = 8.5A
VGS = 10V
1.8
ID = 4.3A
0.04
1.6
o
TA = 125 C
1.4
0.03
1.2
0.02
1
o
TA = 25 C
0.8
0.01
0.6
0.4
0
-50
-25
0
25
50
75
100
125
150
3
4
5
o
6
7
8
9
10
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
60
VGS = 0V
o
VDS = 5V
TA = -55 C
o
25 C
50
10
o
o
TA = 125 C
125 C
40
1
30
0.1
20
0.01
10
0.001
o
25 C
o
-55 C
0.0001
0
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDD5680, Rev. C
FDD5680
Typical Characteristics
(continued)
10
2500
VDS = 10V
ID = 8.5A
f = 1MHz
VGS = 0 V
20V
30V
8
2000
6
1500
4
1000
2
500
0
0
0
5
10
15
20
25
30
35
CISS
COSS
CRSS
0
10
Qg, GATE CHARGE (nC)
20
30
40
50
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
Figure 7. Gate-Charge Characteristics.
60
100
100µs
RDS(ON) LIMIT
SINGLE PULSE
1ms
o
RθJA = 96 C/W
10ms
10
o
TA = 25 C
POWER (W)
100ms
1S
1
10S
DC
VGS = 10V
SINGLE PULSE
0.1
40
20
o
RθJA = 96 C/W
o
TA = 25 C
0.01
0
0.1
1
10
100
0.01
0.1
VDS, DRAIN-SOURCE VOLTAGE (V)
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
R θJA (t) = r(t) * R θJA
R θJA = 96°C/W
0.1
0.05
0.01
0.01
0.02
P(pk)
Single Pulse
t1
0.001
t2
TJ - TA = P * R θJA (t)
Duty Cycle, D = t 1 / t 2
0.0001
0.0001
0.001
0.01
0.1
1
10
100
300
t1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDD5680, Rev. C