FDS3601N 100V Dual N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 1.3 A, 100 V. RDS(ON) = 480 mΩ @ VGS = 10 V RDS(ON) = 530 mΩ @ VGS = 6 V • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • Low gate charge (3.7nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D1 D1 5 D2 6 D2 4 3 Q1 7 SO-8 S2 G2 S1 G1 Absolute Maximum Ratings Symbol 8 2 Q2 1 TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current 1.3 A – Continuous (Note 1a) – Pulsed PD 6 Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) TJ, TSTG W 0.9 –55 to +175 °C (Note 1a) 78 °C/W (Note 1) 40 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS3601N FDS3601N 13’’ 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDS3601N Rev B(W) FDS3601N May 2001 PRELIMINARY Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) W DSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD = 50 V, ID= 1.3 A 26 mJ 1.3 A Off Characteristics VGS = 0 V, ID = 250 µA BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V IGSSF Gate–Body Leakage, Forward VGS = 20 V, IGSSR Gate–Body Leakage, Reverse VGS = –20 V, On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) 100 ID = 250 µA,Referenced to 25°C V 105 mV/°C 10 µA VDS = 0 V 100 nA VDS = 0 V –100 nA 4 V (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C 2 2.6 –5 350 376 664 mV/°C 480 530 955 ID(on) On–State Drain Current ID = 1.3 A VGS = 10 V, ID = 1.3 A VGS = 6 V, VGS = 10 V, ID = 1.3 A, TJ = 125°C VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 5V, ID = 1.3 A 3.6 VDS = 50 V, f = 1.0 MHz V GS = 0 V, 153 pF 5 pF 1 pF 3 mΩ A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time (Note 2) VDD = 50 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 8 16 ns 4 8 ns ns td(off) Turn–Off Delay Time 11 20 tf Turn–Off Fall Time 6 12 ns Qg Total Gate Charge 3.7 5 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 50 V, VGS = 10 V ID = 1.3 A, 0.8 nC 1 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.8 1.3 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 2 0.5in pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS3601N Rev B(W) FDS3601N Electrical Characteristics FDS3601N Typical Characteristics 4 1.6 5.0V 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS =10V 4.5V 3 4.0V 2 1 0 VGS = 4.0V 1.4 4.5V 1.2 5.0V 10V 1 0.8 0 2 4 6 0 8 1 Figure 1. On-Region Characteristics. 3 4 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.25 2.6 ID = 1.3A VGS = 10V 2.2 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.8 1.4 1 0.6 0.2 ID = 0.6A 1 TA = 125oC 0.75 0.5 TA = 25oC 0.25 -50 -25 0 25 50 75 100 125 150 175 2.5 4 o TJ, JUNCTION TEMPERATURE ( C) 5.5 7 8.5 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 IS, REVERSE DRAIN CURRENT (A) 6 VDS = 5V ID, DRAIN CURRENT (A) 6.0V 4.5 3 TA = 125oC 25oC 1.5 -55oC VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 0 1.5 2.5 3.5 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS3601N Rev B(W) FDS3601N Typical Characteristics 200 ID = 1.3A VDS = 30V 8 70V 6 4 150 100 50 2 COSS CRSS 0 0 0 1 2 3 4 0 10 Qg, GATE CHARGE (nC) 10 P(pk), PEAK TRANSIENT POWER (W) 10ms 100ms 1s 10s DC 0.1 VGS = 10V SINGLE PULSE RθJA = 135oC/W 0.01 TA = 25oC 0.001 0.1 1 10 50 100 SINGLE PULSE RθJA =135°C/W TA = 25°C 40 30 20 10 0 0.001 1000 0.01 VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 40 50 1ms 1 30 Figure 8. Capacitance Characteristics. 100µs RDS(ON) LIMIT 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V CISS 50V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 135 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS3601N Rev B(W)