INTERSIL FRF9150D

FRF9150D, FRF9150R,
FRF9150H
23A, -100V, 0.140 Ohm, Rad Hard,
P-Channel Power MOSFETs
June 1998
Features
Package
• 23A, -100V, rDS(ON) = 0.140Ω
TO-254AA
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
• Gamma Dot
• Photo Current
• Neutron
-
G
Meets Pre-RAD Specifications to 100K RAD (Si)
Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si)
Performance Permits Limited Use to 3000K RAD (Si)
Survives 3E9 RAD (Si)/s at 80% BVDSS Typically
Survives 2E12 Typically If Current Limited to IDM
7.0nA Per-RAD (Si)/s Typically
Pre-RAD Specifications for 3E13 Neutrons/cm2
Usable to 3E14 Neutrons/cm2
Description
Intersil Corporation has designed a series of SECOND GENERATION hardened
power MOSFETs of both N and P channel enhancement types with ratings from
100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness
is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging
from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with
current limiting.
S
D
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
Symbol
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
D
G
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for
any desired deviations from the data sheet.
Absolute Maximum Ratings
S
TC = +25oC, Unless Otherwise Specified
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain-Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . .ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
4-1
FRF9150D, R, H
-100
-100
UNITS
V
V
23
15
69
±20
A
A
A
V
125
50
1.00
69
23
69
-55 to +150
W
W
W/oC
A
A
A
oC
300
oC
File Number
3243.2
FRF9150D, FRF9150R, FRF9150H
Pre-Radiation Electrical Specifications
TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
-100
-
V
Gate-Threshold Volts
VGS(TH)
VDS = VGS, ID = 1mA
-2.0
-4.0
V
Gate-Body Leakage Forward
IGSSF
VGS = -20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = +20V
-
100
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = -100V, VGS = 0
VDS = -80V, VGS = 0
VDS = -80V, VGS = 0, TC = +125oC
-
1
0.025
0.25
mA
Time = 20µs
-
69
A
Rated Avalanche Current
IAR
Drain-Source On-State Volts
VDS(ON)
VGS = -10V, ID = 23A
-
-3.38
V
Drain-Source On Resistance
rDS(ON)
VGS = -10V, ID = 15A
-
0.140
Ω
tD(ON)
VDD = -50V, ID = 23A
-
170
Pulse Width = 3µs
-
620
Period = 300µs, RG = 25Ω
-
600
0 ≤ VGS ≤ 10 (See Test Circuit)
-
242
Turn-On Delay Time
Rise Time
tR
Turn-Off Delay Time
ns
tD(OFF)
Fall Time
tF
Gate-Charge Threshold
QG(TH)
4
16
Gate-Charge On State
QG(ON)
60
240
126
504
3
14
VDD = -50V, ID = 23A
IGS1 = IGS2
0 ≤ VGS ≤ 20
nc
Gate-Charge Total
QGM
Plateau Voltage
VGP
Gate-Charge Source
QGS
17
68
Gate-Charge Drain
QGD
21
86
Diode Forward Voltage
VSD
-0.6
-1.8
V
Reverse Recovery Time
tT
-
700
ns
-
1.0
-
48
nc
ID = 23A, VGD = 0
I = 23A; di/dt = 100A/µs
Junction-To-Case
RθJC
Junction-To-Ambient
RθJA
V
Free Air Operation
oC/W
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDD
VDS
L
RL
+
CURRENT I
TRANSFORMER AS
VDS
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
DUT
0V
VGS = -12V
+
50Ω
-
tP
DUT
RGS
VDD
50V-150V
50Ω
VGS ≤ 20V
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
4-2
FRF9150D, FRF9150R, FRF9150H
Post-Radiation Electrical Specifications
TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETER
Drain-Source
Breakdown Volts
Gate-Source
Threshold Volts
Gate-Body
Leakage Forward
Gate-Body
Leakage Reverse
Zero-Gate Voltage
Drain Current
Drain-Source
On-State Volts
Drain-Source
On Resistance
SYMBOL
TYPE
TEST CONDITIONS
MIN
MAX
UNITS
(Notes 4, 6)
BVDSS
FRF9150D, R
VGS = 0, ID = 1mA
-100
-
V
(Notes 5, 6)
BVDSS
FRF9150H
VGS = 0, ID = 1mA
-95
-
V
(Notes 4, 6)
VGS(TH)
FRF9150D, R
VGS = VDS, ID = 1mA
-2.0
-4.0
V
(Notes 3, 5, 6)
VGS(TH)
FRF9150H
VGS = VDS, ID = 1mA
-2.0
-6.0
V
(Notes 4, 6)
IGSSF
FRF9150D, R
VGS = -20V, VDS = 0
-
100
nA
(Notes 5, 6)
IGSSF
FRF9150H
VGS = -20V, VDS = 0
-
200
nA
(Notes 2, 4, 6)
IGSSR
FRF9150D, R
VGS = 20V, VDS = 0
-
100
nA
(Notes 2, 5, 6)
IGSSR
FRF9150H
VGS = 20V, VDS = 0
-
200
nA
(Notes 4, 6)
IDSS
FRF9150D, R
VGS = 0, VDS = -80V
-
25
µA
(Notes 5, 6)
IDSS
FRF9150H
VGS = 0, VDS = -80V
-
100
µA
(Notes 1, 4, 6)
VDS(ON)
FRF9150D, R
VGS = -10V, ID = 23A
-
-3.38
V
(Notes 1, 5, 6)
VDS(ON)
FRF9150H
VGS = -16V, ID = 23A
-
-5.07
V
(Notes 1, 4, 6)
rDS(ON)
FRF9150D, R
VGS = -10V, ID = 15A
-
0.140
Ω
(Notes 1, 5, 6)
rDS(ON)
FRF9150H
VGS = -14V, ID = 15A
-
0.210
Ω
NOTES:
1. Pulse test, 300µs (Max)
2. Absolute value
3. Gamma = 300K RAD (Si)
4. Gamma = 10K RAD (Si) for “D”, 100K RAD (Si) for “R”. Neutron = 3E13
5. Gamma = 1000K RAD (Si). Neutron = 3E13
6. In situ Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 1/18/91 on TA 17751 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988
4-3
FRF9150D, FRF9150R, FRF9150H
Typical Performance Characteristics
4-4
FRF9150D, FRF9150R, FRF9150H
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
E. Preconditioning Attributes Data Sheet
Hi-Rel Lot Traveler
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
HTRB - Hi Temp Drain Stress Post Reverse
Bias Delta Data
1. Rad Hard TXV Equivalent - Standard Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Attributes Data Sheet
F. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
G. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
D. Group A
G. Group D
2. Rad Hard TXV Equivalent - Optional Data Package
2. Rad Hard Max. “S” Equivalent - Optional Data Package
A. Certificate of Compliance
A. Certificate of Compliance
B. Assembly Flow Chart
B. Serialization Records
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
C. Assembly Flow Chart
D. Group A
- Attributes Data Sheet
- Group A Lot Traveler
E. Group B
- Attributes Data Sheet
- Group B Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
G. Group D
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
- Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
F. Group A
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
I. Group D
Class S - Equivalents
1. Rad Hard “S” Equivalent - Standard Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
4-5
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
FRF9150D, FRF9150R, FRF9150H
TO-254AA
3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE
INCHES
A
ØP
E
SYMBOL
A1
Q
H1
D
1
2
NOTES
0.249
0.260
6.33
6.60
-
0.050
1.02
1.27
-
Øb
0.035
0.045
0.89
1.14
2, 3
D
0.790
0.800
20.07
20.32
-
E
0.535
0.545
13.59
13.84
0.150 TYP
0.300 BSC
0.245
0.265
-
3.81 TYP
4
7.62 BSC
4
6.23
6.73
-
J1
0.140
0.160
3.56
4.06
4
L
0.520
0.560
13.21
14.22
-
ØP
0.139
0.149
3.54
3.78
-
Q
0.110
0.130
2.80
3.30
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. A of
JEDEC outline TO-254AA dated 11-86.
2. Add typically 0.002 inches (0.05mm) for solder coating.
3. Lead dimension (without solder).
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D.
5. Die to base BeO isolated, terminals to case ceramic isolated.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
3
e
MAX
0.040
e1
Øb
MILLIMETERS
MIN
A
H1
L
MAX
A1
e
0.065 R MAX.
TYP.
MIN
J1
e1
WARNING!
BERYLLIA WARNING PER MIL-S-19500
Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical
operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound
shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’
compounds.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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TEL: (407) 724-7000
FAX: (407) 724-7240
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TEL: (32) 2.724.2111
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4-6
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